IRF4905 - P-Channel HEXFET Power MOSFET - 175°C Operating Temperature - Fast Switching

Oct 12, 2026

IRF4905 is a fifth-generation HEXFET Power MOSFET designed for extremely low on-resistance per silicon area, combining fast switching performance with a ruggedized package approach. Suitable for commercial-industrial power dissipation up to approximately 50 W in the TO-220 configuration, it emphasizes low thermal resistance and cost effectiveness. Key data include absolute maximum ratings, avalanche energy and current, gate threshold and leakage characteristics, switching delays and transition times, input/output capacitances, and thermal resistance values for reliable operation.

LanguageEnglish

CategoryHealthcare

FormatPDF

Pages8

Reading Time20 min

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Description

Absolute Maximum Ratings

HEXFET Power MOSFET

Thermal Resistance

Electrical Characteristics @ TJ = 25°C

Breakdown and On-Resistance

Gate Threshold and Transconductance

Capacitances and Charges

Switching Times and Inductances

Source-Drain Ratings and Characteristics

PD-9.1280C IRF4905 l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings HEXFET® Power MOSFET | | Parameter | Max. | Units | | --- | --- | --- | --- | | ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -74 | A | | ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -52 | | | IDM | Pulsed Drain Current 􀂁 | -260 | | | PD @TC = 25°C | Power Dissipation | 200 | W | | | Linear Derating Factor | 1.3 | W/°C | | VGS | Gate-to-Source Voltage | ± 20 | V | | EAS | Single Pulse Avalanche Energy􀂂 | 930 | mJ | | IAR | Avalanche Current􀂁 | -38 | A | | EAR | Repetitive Avalanche Energy􀂁 | 20 | mJ | | dv/dt | Peak Diode Recovery dv/dt 􀂃 | -5.0 | V/ns | | TJ TSTG | Operating Junction and
Storage Temperature Range | -55 to + 175 | °C | | | Soldering Temperature, for 10 seconds | 300 (1 .6mm from case ) | | | | Mounting torque, 6-32 or M3 screw | 10 lbf•in (1 . 1N•m) | | Thermal Resistance | | Parameter | Typ. | Max. | Units | | --- | --- | --- | --- | --- | | RθJC | Junction-to-Case | ––– | 0.75 | °C/W | | RθCS | Case-to-Sink, Flat, Greased Surface | 0.50 | ––– | | | RθJA | Junction-to-Ambient | ––– | 62 | | 8/25/97 IRF4905 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) | | Parameter | Min. | Typ. | Max. | Units | Conditions | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | | V (BR)DSS | Drain-to-Source Breakdown Voltage | -55 | ––– | ––– | V | VGS = 0V, ID = -250µA | | | | ∆V(BR)DSS/∆TJ | Breakdown Voltage Temp. Coefficient | ––– | -0.05 | ––– | V/°C | Reference to 25°C, ID = -1mA | | | | RDS(on) | Static Drain-to-Source On-Resistance | ––– | ––– | 0.02 | Ω | VGS = -10V, ID = -38A 􀂄 | | | | VGS(th) | Gate Threshold Voltage | -2.0 | ––– | -4.0 | V | V DS = VGS , ID = -250µA | | | | gfs | Forward Transconductance | 21 | ––– | ––– | S | V DS = -25V, ID = -38A | | | | IDSS | Drain-to-Source Leakage Current | ––– | ––– | -25 | µA | V DS = -55V, VGS = 0V | | | | | | ––– | ––– | -250 | | V DS = -44V, VGS = 0V, TJ = 150°C | | | | IGSS | Gate-to-Source Forward Leakage | ––– | ––– | 100 | nA | VGS = 20V | | | | | Gate-to-Source Reverse Leakage | ––– | ––– | -100 | | VGS = -20V | | | | Qg | Total Gate Charge | ––– | ––– | 180 | nC | ID = -38A
V DS = -44V
VGS = -10V, See Fig. 6 and 13 􀂄 | | | | Qgs | Gate-to-Source Charge | ––– | ––– | 32 | | | | | | Q gd | Gate-to-Drain ("Miller") Charge | ––– | ––– | 86 | | | | | | td(on) | Turn-On Delay Time | ––– | 18 | ––– | ns | V DD = -28V
ID = -38A
RG = 2.5Ω
RD = 0.72Ω, See Fig. 10 􀂄 | | | | tr | Rise Time | ––– | 99 | ––– | | | | | | td(off) | Turn-Off Delay Time | ––– | 61 | ––– | | | | | | tf | Fall Time | ––– | 96 | ––– | | | | | | LD | Internal Drain Inductance | ––– | 4.5 | ––– | | Between lead,
6mm (0 .25in. )
from package
and center of die contact | D

S | | | LS | Internal Source Inductance | ––– | 7.5 | ––– | | | | | | Ciss | Input Capacitance | ––– | 3400 | ––– | pF | VGS = 0V
V DS = -25V | | | | Coss | Output Capacitance | ––– | 1400 | ––– | | | | | | Crss | Reverse Transfer Capacitance | ––– | 640 | ––– | | ƒ = 1.0MHz, See

FAQs

What are the IRF4905 device’s key performance highlights?

The IRF4905 targets extremely low on-resistance, fast switching, and robust avalanche capability. It is specified as a P-channel HEXFET Power MOSFET with a high operating temperature range.

What temperature and power limits are provided in the absolute maximum ratings?

The document lists operating junction and storage temperature range from -55 to +175°C. It also specifies power dissipation and related linear derating factor for the rated conditions.

Which parameters define switching behavior and gate charge for IRF4905?

Switching behavior is covered using turn-on/turn-off delay times and rise/fall times. Gate charge is provided through total gate charge (Qg) as well as gate-to-source and gate-to-drain (Miller) charge values.

Oct 12, 2026

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