IPD60R145CFD7 - MOSFET - 600V CoolMOS CFD7 Power Device

Oct 12, 2026

Datasheet for the IPD60R145CFD7 600V CoolMOS CFD7 power MOSFET, describing its superjunction SJ technology and role as the successor to CoolMOS CFD2 for soft-switching resonant topologies. The document highlights ultra-fast body diode, low gate charge, best-in-class reverse recovery charge (Qrr), and improved reverse diode dv/dt and diF/dt ruggedness. Key electrical and thermal performance parameters are provided, along with benefits for hard commutation ruggedness and high efficiency in applications such as server, telecom, and EV charging.

LanguageEnglish

CategoryHealthcare

FormatPDF

Pages16

Reading Time40 min

AccessFree to download

Description

Maximum ratings

Table 2 Maximum ratings

Thermal characteristics

Table 3 Thermal characteristics

Electrical characteristics

Electrical characteristics diagrams

Test Circuits

Package Outlines

Appendix A

Revision History

Trademarks

Disclaimer

EN: This Datasheet/Document is presented by the manufacturer. Please visit our website for pricing and availability [at](at www.hestore.hu)[ ](at www.hestore.hu)[www.hestore.hu](at www.hestore.hu). IPD60R145CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behavior CoolMOS™ CFD7 offers highest efficiency in resonant topologies. As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS™ CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS™ CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler. Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation ruggedness • Highest reliability for resonant topologies • Highest efficiency with outstanding ease-of-use / performance tradeoff • Enabling increased power density solutions Potential applications Suiteable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use offerrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters | Parameter | Value | Unit | | --- | --- | --- | | VDS @ Tj,max | 650 | V | | RDS(on),max | 145 | mΩ | | Qg,typ | 31 | nC | | ID,pulse | 58 | A | | Eoss @ 400V | 3.6 | µJ | | Body diode diF/dt | 1300 | A/µs | | Gate
Pin 1 | Drain Pin 2 | | --- | --- | | | | | Source *1: Internal body diode Pin 3 | | | Type / Ordering Code | Package | Marking | Related Links | | --- | --- | --- | --- | | IPD60R145CFD7 | PG-TO252-3 | 60R145F7 | see Appendix A | Final Data Sheet 1 Rev. 2.2, 2020-05-26 600V CoolMOSª CFD7 Power Device IPD60R145CFD7 Table of Contents Description ............................................................................. 1 Maximum ratings ........................................................................ 3 Thermal characteristics .................................................................... 4 Electrical characteristics ................................................................... 5 Electrical characteristics diagrams ........................................................... 7 Test Circuits ........................................................................... 11 Package Outlines ....................................................................... 12 Appendix A ............................................................................ 13 Revision History ........................................................................ 14 Trademarks ........................................................................... 14 Disclaimer ............................................................................ 14 Final Data Sheet 2 Rev. 2.2, 2020-05-26 600V CoolMOSª CFD7 Power Device IPD60R145CFD7 1 Maximum ratings at Tj = 25°C, unless otherwise specified Table 2 Maximum ratings | Parameter | Sym

FAQs

What soft-switching applications is the CoolMOS CFD7 optimized for?

It targets soft switching topologies, specifically phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging.

What are the main electrical features claimed for CoolMOS CFD7?

The datasheet lists an ultra-fast body diode, low gate charge, best-in-class reverse recovery charge (Qrr), and improved reverse diode dv/dt and diF/dt ruggedness, along with low FOM values involving RDS(on).

What key maximum ratings are provided in the document?

Table 2 presents maximum ratings such as VDS max 650 V, RDS(on),max 145 mΩ, Qg,typ 31 nC, ID,pulse 58 A, Eoss at 400V 3.6 µJ, and body diode diF/dt 1300 A/µs.

Oct 12, 2026

Upload by River Wang