HGTG30N60A4D - Data Sheet - September 2004 - 600V SMPS Series N-Channel IGBT

Oct 12, 2026

HGTG30N60A4D is a 600V, MOS-gated high voltage IGBT intended for high-frequency switching and low conduction loss in switch-mode power supplies. The document details device features such as >100 kHz at 390V/30A, 200 kHz at 390V/18A, 600V switching SOA capability, low typical switching transition times, and temperature-compensating SABER™ model availability. It provides absolute maximum ratings, thermal limits, and electrical specifications including voltages, leakage currents, saturation voltage, gate charge, turn-on/off delays, switching energy losses, and diode characteristics with JEDEC TO-247 packaging.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages9

Reading Time23 min

AccessFree to download

Ordering Information

Features

Absolute Maximum Ratings

Electrical Specifications (TJ = 25°C)

Electrical Specifications (Continued)

Notes

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETsand bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343 . The diode used in anti-parallel is the development type TA49373 . This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345 . Ordering Information | PART NUMBER | PACKAGE | BRAND | | --- | --- | --- | | HGTG30N60A4D | TO-247 | 30N60A4D | NOTE: When ordering, use the entire part number. Features • >100kHz Operation At 390V, 30A • 200kHz Operation At 390V, 18A • 600V Switching SOA Capability • Typical Fall Time 60ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model [www.fairchildsemi.com](www.fairchildsemi.com) Packaging JEDEC STYLE TO-247 E Symbol C E HGTG30N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60A4D, UNITS Collector to Emitter Voltage .............................................. BVCES 600 V Collector Current Continuous At TC = 25oC ......................................................... IC25 75 A At TC = 110oC ....................................................... IC110 60 A Collector Current Pulsed (Note 1) ........................................... I CM 240 A Gate to Emitter Voltage Continuous ......................................... VGES ±20 V Gate to Emitter Voltage Pulsed ............................................V GEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) ....................... SSOA 150A at 600V Power Dissipation Total at TC = 25oC ......................................... PD 463 W Power Dissipation Derating TC > 25oC .......................................... 3.7 W/ oC Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering TL 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings”may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified | PARAMETER | SYMBOL | TEST CONDITIONS | | MIN | TYP | MAX | UNITS | | --- | --- | --- | --- | --- | --- | --- | --- | | Collector to Emitter Breakdown Voltage | BVCES | IC = 250µA, V GE = 0V | | 600 | - | - | V | | Collector to Emitter Leakage Current | ICES | VCE = 600V | TJ = 25oC | - | - | 250 | µA | | | | | TJ = 125oC | - | - | 2.8 | mA | | Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 30A,
V GE = 15V | TJ = 25oC | - | 1.8 | 2.6 | V | | | | | TJ = 125oC | - | 1.6 | 2.0 | V | | Gate to Emitter Threshold Voltage | V GE(TH) | IC = 250µA, VCE = V GE | | 4.5 | 5.2 | 7.0 | V | | Gate to Emitter Leakage Current | IGES | V GE = ±20V | | - | - | ±250 | nA | | Switching SOA | SSOA | TJ = 150oC, RG = 3Ω, V GE = 15V, L = 100µH, VCE = 600V | | 150 | - | - | A | | Gate to Emitter Plateau Voltage | VGEP | IC = 30A, VCE = 300V | | - | 8.5 | - | V | | On-State Gate Charge | Qg(ON) | IC = 30A, VCE = 300V | V GE = 15V | - | 225 | 270 | nC | | | | | V GE = 20V | - | 300 | 360 | nC | | Current Turn-On Delay Time | td(ON)I | IGBT and Diode at TJ = 25oC, ICE = 30A,
VCE = 390V,
V GE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24) | | - | 25 | - | ns | | Current Ri

FAQs

What are the key operating advantages of the HGTG30N60A4D?

It is optimized for high-frequency switch-mode power supplies with low on-state conduction loss. It supports high switching performance (e.g., >100 kHz and up to 200 kHz under specified conditions).

What does the document specify under Absolute Maximum Ratings?

It lists stress and maximum limits such as collector-emitter voltage, continuous and pulsed collector current, gate-to-emitter voltage limits, safe operating area capability, total power dissipation, temperature ranges, and soldering temperature. Exceeding these ratings may cause permanent damage.

Which electrical switching parameters are included in the electrical specifications tables?

The tables include collector-emitter breakdown and leakage, saturation voltage, VGE threshold and leakage, switching SOA, gate plateau voltage, on-state gate charge, turn-on/turn-off delays, current rise/fall times, and turn-on/off energies. Diode forward voltage and reverse recovery time are also provided.

Oct 12, 2026

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