20A, 600V Field Stop IGBT - Description, Features & Electrical Characteristics

Oct 12, 2026

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SGT20N60FD1PN/P7/F/S is an IGBT product using Field Stop IGBT technology, targeted for high-performance power conversion such as induction heating, UPS, SMPS, and PFC. The sheet summarizes key features including 20A rated current, 600V VCE(sat) behavior (typ. 2.0V at IC=20A), low conduction loss, fast switching, and high input impedance. It provides absolute maximum ratings, thermal characteristics, detailed electrical parameters for IGBT and FRD, and typical characteristic curves for output, switching, capacitance, and turn-on behavior.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages9

Reading Time23 min

AccessFree to download

Overview

Description and Applications

Features

Device Identification

Nomenclature

Ordering Information

Maximum Ratings

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

IGBT Parameters

FRD Parameters

Typical Characteristic Curves

20A, 600V FIELD STOP IGBT DESCRIPTION SGT20N60FD1PN/P7/F/S using Field Stop IGBT technology, offers the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 􀂊 20A, 600V, VCE(sat)(typ. )=2.0V@IC=20A 􀂊 Low conduction loss 􀂊 Fast switching 􀂊 High input impedance G C E TO-220F-3L TO-263-2L TO-3P TO-247-3L NOMENCLATURE SGT 20 N 60 □ □ □ □ IGBT series Current: 60 denotes 60A N : N Channel NE: N-channel planar gate with ESD T: N-channel trench gate Voltage: 60 denotes 600V Package, PN denotes TO-3P; P7 denotes TO-247-3L, F denotes TO-220F; S denotes TO-263 1 ,2 ,3… : Version No. D : Package with fast recovery diode R : integrated with freewheeling diode L : Low saturation voltage S : Standard Q : Quick F : High speed UF : Ultra high speed ORDERING INFORMATION | Part No. | Package | Marking | Hazardous Substance Control | Packing | | --- | --- | --- | --- | --- | | SGT20N60FD1PN | TO-3P | 20N60FD1 | Pb free | Tube | | SGT20N60FD1P7 | TO-247-3L | 20N60FD | Pb free | Tube | | SGT20N60FD1F | TO-220F-3L | 20N60FD1F | Pb free | Tube | | SGT20N60FD1S | TO-263-2L | 20N60FD1S | Pb free | Tube | ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) | Parameter | | Symbol | Ratings | | | | Units | | --- | --- | --- | --- | --- | --- | --- | --- | | | | | SGT20N60 FD1PN | SGT20N60 FD1P7 | SGT20N60 FD1F | SGT20N60 FD1S | | | Collector to Emitter Voltage | | VCE | 600 | | | | V | | Gate to Emitter Voltage | | VGE | ±20 | | | | V | | Collector Current | TC=25􀁱 C | IC | 40 | | | | A | | | TC=100􀁱 C | | 20 | | | | | | Pulsed Collector Current | | ICM | 60 | | | | A | | Power Dissipation(TC=25􀁱 C)
-Derate above 25􀁱 C | | PD | 155 | 167 | 38 | 195 | W | | | | | 1.24 | 1.33 | 0.25 | 1.56 | W/􀁱 C | | Operating Junction Temperature Range | | TJ | -55～+150 | | | | 􀁱 C | | Storage Temperature Range | | Tstg | -55～+150 | | | | 􀁱 C | THERMAL CHARACTERISTICS | Parameter | Symbol | | Ratings | | | | | | | | Units | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | | | | SGT20N60 FD1PN | | SGT20N60 FD1P7 | SGT20N60 FD1F | | | SGT20N60 FD1S | | | | Thermal Resistance, Junction to Case (IGBT) | RθJC | | 0.79 | | 0.75 | 3.95 | | | 0.64 | | 􀁱 C/W | | Thermal Resistance, Junction to Case (FRD) | RθJC | | 2.7 | | 2.24 | 5.2 | | | 3.07 | | 􀁱 C/W | | Thermal Resistance, Junction to
Ambient | RθJA | | 40 | | 40 | 62.5 | | | 30 | | 􀁱 C/W | |
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted) | | | | | | | | | | | | | Parameter | | Symbol | | Test conditions | | | Min. | Typ. | | Max. | Units | | Collector to Emitter Breakdown Voltage | | BVCE | | VGE=0V, IC=100μA | | | 600 | -- | | -- | V | | C-E Leakage Current | | ICES | | VCE=600V,VGE=0V | | | -- | -- | | 200 | μA | | G-E Leakage Current | | IGES | | VGE=20V,VCE=0V | | | -- | -- | | ±400 | nA | | G-E Threshold Voltage | | VGE(th) | | IC=250μA,VCE=VGE | | | 4.0 | 5.0 | | 6.5 | V | | Collector to Emitter Saturation Voltage | | VCE(sat) | | IC=20A,VGE=15V | | | -- | 2.0 | | 2.7 | V | | | | | | IC=20A, VGE=15V,TC=125􀁱 C | | | -- | 2.3 | | -- | V | | Input Capacitance | | Cies | | VCE=30V
VGE=0V
f=1MHz | | | -- | 916 | | -- | pF | | Output Capacitance | | Coes | | | | | -- | 108 | | -- | | | Reverse Transfer Capacitance | | Cres | | | | | -- | 26 | | -- | | | Turn-On Delay Time | | Td(on) | | VCE=400V | | | -- | 15 | | -- | ns | | Rise Time | Tr | | IC=20ARg=10Ω VGE=15V | | -- | 45 | -- | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | | Turn-Off Delay Time | Td(off) | | | | -- | 67 | -- | | | Fall Time | Tf | | | | -- | 129 | -- | | | Turn-On Switching Loss | Eon | | Inductive Load | | -- | 0.898 | -- | mJ | | Turn-Off Switching Loss | Eoff | | | | -- | 0.336 | -- | | | Total Switching Lo

FAQs

What applications does SGT20N60FD1PN/P7/F/S target?

It is intended for induction heating, UPS, SMPS, and PFC applications.

What are the main electrical performance highlights listed in the features section?

The datasheet highlights low conduction loss, fast switching, high input impedance, and provides a typical VCE(sat) of 2.0V at IC=20A.

Which limits and test conditions are covered in the absolute maximum and electrical characteristics sections?

It includes absolute maximum limits such as collector-emitter voltage, gate-emitter voltage, collector current at TC=25°C and TC=100°C, power dissipation with derating, and specified temperature ranges, plus detailed IGBT electrical parameters at defined measurement conditions.

Oct 12, 2026

Upload by Fahsai