2SA1246/2SC3114 - Datasheet - PNP/NPN Epitaxial Planar Silicon Transistors

Q: What are the main features listed for the 2SA1246/2SC3114 transistors?

The document highlights high VEBO and wide ASO with highly resistant breakdown performance.

Q: Which absolute maximum rating conditions are specified in the datasheet?

Absolute maximum ratings are given with Ta=25°C and include electrical and thermal limits such as collector current, power dissipation, and junction/storage temperature.

Q: What does the datasheet include regarding package and mechanical information?

It provides package dimensions for Package 2003A and labels for base and collector/element structure along with the transistor configuration mapping.

Oct 12, 2026

Upload by dawugda

Datasheet for the 2SA1246/2SC3114 transistors, providing key feature notes such as high VEBO and wide ASO with strong resistance to breakdown. Includes absolute maximum ratings at Ta=25°C, electrical characteristics, and parameters like VCB0, VCE0, VEBO, collector current, DC current gain (hFE), gain-bandwidth product, saturation voltages, breakdown voltages, and common-base output capacitance. Supplies unit definitions and package dimensions for the specified construction and usage limits.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages4

Reading Time10 min

AccessFree to download

Features

Absolute Maximum Ratings (Ta=25°C)

Electrical Characteristics (Ta=25°C)

Package Dimensions (2003A)

Notes and Usage Limitations

# Features ·High VEBO ·Wide ASO and highly resistant to breakdown ( ):2SA1246 Absolute Maximum Ratings/Ta=25℃ Coliector to base voltageCollector to emitter voltageEmitter to base voltageCollector currentCollector Current(Pulse)Collector dissipationJunction temperatureStorage temperature Electrical Characteristics/Ta=25℃ Collector cutoff currentEmitter cutoff currentDC current gainGain-bandwidth productCommon base output capacitance C-E saturation voltage C-B breakdown voltage C-E breakdown voltage E-B breakdown voltage *The 2SA1246/2SC3114 are classified as follows according to hFE at 1 mA | 100 R 200 | 140 S 280 | 200 T 400 | 280 U 560 | | --- | --- | --- | --- | | SANYO | No.1047B
2SA1246/2SC3114 | | --- | --- | | | PNP/NPN Epitaxial Planar Silicon Transistors
High-VEBO,AFAmp Applications | unit VCBO VCEO VEBO Ic Ic Tstg ICBOVCB=(一)40V,IE=0(一)0.1 μAIEBOVEB=(一)10V,Ic=0hFEVCE=(-)6V,Ic=(-)1 mA100*fTVCE=(-6V,Ic=(-)1mACobVCB=(-)6V,f=1 MHzVCE(sat)Ic=(-)50 mA,IB=(一)5 mAV(BR)CBCIc=(一)10μA,IE=0(一)60VV(BR)CEOIc=(一)1 mA,RBE=0∞(一)50V(BR)EBOlE=(一)10μA,Ic=0(一)15 (一)60 V (一)50 V (一)15 V (一)150 mA (一)300 mA 400 mW ℃ 150 ℃ -55 to+150 Package Dimensions 2003A(unit:mm) B.Base C.CollectorSANYO:NPE.Emitter DC Current Gain,hFE Collector to Emitter Voltage,VCE-VCollector to Emitter Voltage,VCE-VIC-VCECollector to Emitter Voltage,VCE-VCollector to Emitter Voltage,VCE-VIc-VBE Collector Current, Ic-mA Colector Current,lCImA 0.40.81.21.6Bese to Emitter Voltage,VBE-VBase to Emitter Voltage,VBE-VhFE -IchF-Ic DC Current Gain,hFE -0.1-1.0·100.1Collector Current,Ic-mACollector Current,Ic-mA No.1047-2/4 ollector to Emitter Saturation Voltage,VCE(sat)一< Common Base Output Capacitance, ob一pF Saturation Voftage,VCE(sat)I< Collector to Emitter No.1047-3/4 | No products described or contained herein are intended for use in surgical implants,life-support systems
aerospace equipment,nuclear power control systems,vehicles,disaster/crime-prevention equipment and
the like,the failure of which may directly or indirectly cause injury,death or property loss.
■Anyone purchasing any products described or contained herein for an above-mentioned use shall:
①Accept full responsibility and ndemnify and defend SANYO ELECTRIC Co.,LTD.,its affiliates,
subsidiaries and distributors and all their officers and employees,jointly and severally,against any
and all claims and litigation and all damages,cost and expenses associated with such use:
②Not impose any responsibility for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC C0.LTD.its affiliates.subsidiaries and distributors or any of
their officers and employees jointly or severally.
■Information(including circuit diagrams and cirouit parameters)herein-is for example only;it is not guarant-
eed for volume production.SANY0 believes information herein is accurate and reliable.but no guarantees
are made or implied regarding its use or any nfringements of intellectual property rights or other rights of
third parties. | | --- |

FAQs

What are the main features listed for the 2SA1246/2SC3114 transistors?

The document highlights high VEBO and wide ASO with highly resistant breakdown performance.

Which absolute maximum rating conditions are specified in the datasheet?

Absolute maximum ratings are given with Ta=25°C and include electrical and thermal limits such as collector current, power dissipation, and junction/storage temperature.

What does the datasheet include regarding package and mechanical information?

It provides package dimensions for Package 2003A and labels for base and collector/element structure along with the transistor configuration mapping.

Oct 12, 2026

Upload by dawugda