2N2222 - NPN Silicon Epitaxial Planar Transistor - for switching and AF amplifier applications

Nov 1, 2026

NPN silicon epitaxial planar transistors 2N2222 and 2N2222A are specified for switching and AF amplifier applications. The document defines allowable stress limits at Ta = 25°C, listing maximum voltages, collector current up to 600 mA, total power dissipation of 625 mW, and junction and storage temperature ranges. It also provides typical characteristics at 25°C, including DC current gain hFE across multiple operating currents, cutoff and breakdown parameters, saturation voltages, gain bandwidth product, and collector output capacitance. Pin configurations can vary on request.

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CategoryTechnology

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Absolute Maximum Ratings

Characteristics at T = 25°C

Notes

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) | Parameter | Symbol | Value | Unit | | --- | --- | --- | --- | | Collector Base Voltage 2N2222
2N2222A | VCBO | 60
75 | V | | Collector Emitter Voltage 2N2222
2N2222A | VCEO | 30
40 | V | | Emitter Base Voltage 2N2222
2N2222A | VEBO | 5 6 | V | | Collector Current | IC | 600 | mA | | Power Dissipation | Ptot | 625 | mW | | Junction Temperature | Tj | 150 | OC | | Storage Temperature Range | Tstg | -55 to + 150 | OC | 2N2222 / 2N2222A Characteristics at T = 25 OC | a
Parameter | | Symbol | Min. | Max. | Unit | | --- | --- | --- | --- | --- | --- | | DC Current Gain | | | | | | | at VCE = 10 V, IC = 0.1 mA | | hFE | 35 | - | - | | at VCE = 10 V, IC = 1 mA | | hFE | 50 | - | - | | at VCE = 10 V, IC = 10 mA | | hFE | 75 | - | - | | at VCE = 10 V, IC = 150 mA | | hFE | 100 | 300 | - | | at VCE = 10 V, IC = 500 mA 2N2222 | | hFE | 30 | - | - | | 2N2222A | | hFE | 40 | - | - | | Collector Base Cutoff Current
at VCB = 50 V
at VCB = 60 V | 2N2222
2N2222A | ICBO | -
- | 10
10 | nA | | Collector Base Breakdown Voltage
at IC = 10 µA 2N2222
2N2222A | | V(BR)CBO | 60
75 | -
- | V | | Collector Emitter Breakdown Voltage
at IC = 10 mA 2N2222
2N2222A | | V(BR)CEO | 30
40 | -
- | V | | Emitter Base Breakdown Voltage
at IE = 10 µA 2N2222
2N2222A | | V(BR)EBO | 5 6 | -
- | V | | Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA | 2N2222
2N2222A
2N2222
2N2222A | VCE(sat) | -
-
-
- | 0.4
0.3
1.6
1 | V | | Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA | 2N2222
2N2222A
2N2222
2N2222A | VBE(sat) | -
0.6
-
- | 1.3
1.2
2.6
2 | V | | Gain Bandwidth Product
at IC = 20 mA, VCE = 20 V, f = 100 MHz | | fT | 250 | - | MHz | | Collector Output Capacitance
at VCB = 10 V, f = 1 MHz | | Cob | - | 8 | pF | 2N2222 / 2N2222A Note: Specification is subject to change without further notice. For more details and updates, please visit our website.

FAQs

What are the absolute maximum ratings for 2N2222 and 2N2222A at Ta = 25°C?

They include maximum collector-base voltage of 60V/75V, collector-emitter voltage of 30V/40V, emitter-base voltage of 5V/6V, collector current of 600mA, total power dissipation of 625mW, and junction temperature of 150°C, with storage from -55°C to +150°C.

How is DC current gain (hFE) specified for different operating points?

hFE is given at VCE = 10V with several IC values: 0.1mA, 1mA, 10mA, and 150mA for each device; 2N2222A also includes a 500mA case with specified minimums.

What switching and saturation parameters are listed in the characteristics table?

Collector-emitter saturation voltage VCE(sat) and base-emitter saturation voltage VBE(sat) are provided for test conditions such as IC = 150mA with IB = 15mA and IC = 500mA with IB = 50mA.

Nov 1, 2026

Uploaded by River Wang