TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE - Horizontal Deflection Output for High Resolution Display - High Speed Switching Applications

Oct 12, 2026

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TOSHIBA 2SC5144 silicon NPN transistor datasheet focuses on horizontal deflection output for high resolution display color TV. It lists high-speed switching characteristics including typical fall time and storage time, plus key limits such as collector-base and collector-emitter voltages, maximum collector current, base current, power dissipation, and junction/storage temperatures. Electrical characteristics cover cutoff currents, breakdown voltage, DC current gain ranges, saturation voltages, transition frequency, output capacitance, and a switching-time test circuit reference.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages5

Reading Time13 min

AccessFree to download

HIGH SPEED SWITCHING APPLICATIONS

MAXIMUM RATINGS (Ta =25℃)

ELECTRICAL CHARACTERISTICS (Ta =25℃)

# TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5144 # HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTIONDISPLAY,COLOR TV ## HIGH SPEED SWITCHING APPLICATIONS ● High Speed :tf=0.15μs(Typ.) ● High Voltage :VCBO=1700V · Low Saturation Voltage:VCE(sat)=3V(Max.) ## MAXIMUM RATINGS(Ta =25℃) | CHARACTERISTIC | | SYMBOL | RATING | UNIT | | --- | --- | --- | --- | --- | | Collector-Base Voltage | | VCBO | 1700 | V | | Collector-Emitter Voltage | | VCEO | 600 | V | | Emitter-Base Voltage | | VEBO | 5 | V | | Collector Current | DC | Ic | 20 | A | | | Pulse | ICP | 40 | | | Base Current | | IB | 10 | A | | Collector Power Dissipation
(Tc=25℃) | | Pc | 200 | W | | Junction Temperature | | Tj | 150 | ℃ | | Storage Temperature Range | | Tstg | -55~150 | ℃ | ## ELECTRICAL CHARACTERISTICS(Ta =25℃) | CHARACTERISTIC | | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNIT | | --- | --- | --- | --- | --- | --- | --- | --- | | Collector Cut-off Current | | ICBO | VCB=1700V,IE=0 | 一 | 一 | 1 | mA | | Emitter Cut-off Current | | IEBO | VEB=5V,Ic=0 | 一 | 一 | 10 | μA | | Collector-Emitter Breakdown
Voltage | | V(BR)CEO | Ic=10mA,IB=0 | 600 | 一 | 一 | V | | DC Current Gain | | hFE(1) | VCE=5V,Ic=2A | 10 | 一 | 30 | 一 | | | | hFE(2) | VCE =5V,Ic=11A | 4.5 | 一 | 8.5 | | | Collector-Emitter Saturation
Voltage | | VCE(sat) | Ic=11A,IB=2.75A | 一 | 一 | 3 | V | | Base-Emitter Saturation
Voltage | | VBE(sat) | Ic=11A,IB=2.75 A | 一 | 1.0 | 1.3 | V | | Transition Frequency | | fT | VCE =10V,IE =0.1A | 一 | 1.7 | 一 | MHz | | Collector Output Capacitance | | Cob | VCB=10V,IE =0,f=1MHz | 一 | 290 | 一 | pF | | Switching
Time (Fig.1) | Storage Time | tstg | ICP=10A,IB1(end)=1.8A
fH=64kHz | 一 | 2.5 | 4.0 | μs | | | Fall Time | tf | | 一 | 0.15 | 0.3 | | | TOSHIBA is continually working to improve the quality and the reliability of its products.Nevertheless,semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.It is the responsibility of the buyer,when utilizing
TOSHIBA products,to observe standards of safety,and to avoid situations in wich a malfunction or failure of a TOSHIBA product could cause loss
of human life,bodily injury or damage to property.n developing your designs,pleas ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications.Also,please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
● The information contained herein is presented only as a guide for the applications of our products.No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rghts of the third parties which may result from its use.No license is granted
by implication or othérwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
● The information contained herein is subject to change without notice. | | --- | Unit in mm | Ø3.3±0.2
20.5MAX.
品
26.0±0.5
1.5
只
2.50
2.5
20.0±0.6
10=8:25
5.45±0.15
5.45±0.15
5.2MAX.
123
1.BASE
2.COLLECTOR(HEAT SINK)
3.EMITTER | | --- | | JEDEC
一 | | EIAJ
一 | | 2-21F2A
TOSHIBA | Weight:9.75g(Typ.) 961001EAA2 Fig.1 SWITCHING TIME TEST CIRCUIT BASE CURRENT Base Current Gradient (A/μs) (Note):Leakage Inductance of secondary winding LB is 1.2μH. COLLECTOR CURRENT IC(A) COLLECTOR-EMITTER VOLTAGE VCE(V)COLLECTOR CURRENT Ic(A)Ic-VBE DC CURRENT GAIN hFE OLLECTOR CURRENT Ic(A) 0.20.40.60.81

FAQs

What are the maximum ratings for the 2SC5144 transistor at Ta=25℃?

The document specifies maximum collector-base voltage VCBO=1700V, collector-emitter voltage VCEO=600V, emitter-base voltage VEBO=5V, collector current Ic=20A (DC) and ICP=40 (pulse), base current IB=10A, power dissipation Pc=200W at Tc=25℃, and temperature limits Tj=150℃ and Tstg=-55~150℃.

What electrical characteristics are provided under electrical characteristics at Ta=25℃?

It includes collector cutoff current ICBO up to 1mA and emitter cutoff current IEBO up to 10μA, collector-emitter breakdown voltage V(BR)CEO with Ic=10mA and IB=0 equal to 600V, DC current gain hFE(1)=10 to 30 and hFE(2)=4.5 to 8.5, plus saturation voltages VCE(sat) max 3V and VBE(sat) 1.0 to 1.3V.

Which high-speed switching parameters are highlighted for switching performance?

High speed switching sections list typical switching time values such as storage time tstg typ 2.5μs max 4.0μs and fall time tf typ 0.15μs max 0.3μs. A figure reference (Fig.1) and the switching time test circuit are also included.

Oct 12, 2026

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