TO-220 3A High sensitive Thyristor - TF321M-A, TF341M-A, TF361M-A

Oct 12, 2026

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TO-220 3A high sensitive thyristor specifications for TF321M-A, TF341M-A, and TF361M-A. Key features include repetitive peak off-state voltages of 200/400/600 V, average on-state current IT(AV)=3 A, and high sensitive gate triggering with IGT up to 0.1 mA. The document lists absolute maximum ratings such as VDRM/VRRM, non-repetitive VDSM/VRSM, on-state and surge currents, gate currents and powers, and temperature limits for junction and storage. Electrical characteristics provide off-state and reverse currents, on-state voltage, gate trigger voltage and current, dv/dt, turn-off time, holding current, and thermal resistance plus typical IT(AV)-related graphs and gate trigger temperature behavior.

LanguageEnglish

CategoryTechnology

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Pages2

Reading Time5 min

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Features

Absolute Maximum Ratings

Electrical Characteristics

Typical Characteristics

TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A ■Features ●Repetitive peak off-state voltage: VDRM=200, 400, 600V ●Average on-state current: IT(AV)=3A ●High sensitive Gate trigger Current: IGT=0.1mA max ■Absolute Maximum Ratings External Dimensions (Unit: mm) (1) . Cathode (K) (2). Anode (A) (1) (2) (3) (3) . Gate (G) a. Part Number b. Lot Number Weight: Approx. 2.6g 12.0 min 16.7max 4.0 max 8.8±0.2 3.0±0.2 | Parameter | Symbol | Ratings | | | Unit | Conditions | | --- | --- | --- | --- | --- | --- | --- | | | | TF321M-A | TF341M-A | TF361M-A | | | | Repetitive peak off-state voltage | VDRM | 200 | 400 | 600 | V | Tj=–40 to +125°C, RGK=1kΩ | | Repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | V | | | Non-repetitive peak off-state voltage | VDSM | 300 | 500 | 700 | V | | | Non-repetitive peak reverse voltage | VRSM | 300 | 500 | 700 | V | | | Average on-state current | IT(AV) | 3.0 | | | A | 50Hz Half-cycle sinewave, Continuous current, Tc =87°C | | RMS on-state current | IT(RMS) | 4.7 | | | A | | | Surge on-state current | ITSM | 60 | | | A | 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj =125°C | | Peak forward gate current | IFGM | 2.0 | | | A | f 50Hz, duty 10% | | Peak forward gate voltage | VFGM | 10 | | | V | | | Peak reverse gate voltage | VRGM | 5.0 | | | V | f 50Hz | | Peak gate power loss | PGM | 5.0 | | | W | f 50Hz, duty 10% | | Average gate power loss | PG (AV) | 0.5 | | | W | | | Junction temperature | Tj | –40 to +110 | | | °C | | | Storage temperature | Tstg | –40 to +125 | | | °C | | ■Electrical Characteristics | Parameter | Symbol | Ratings | | | Unit | Conditions | | --- | --- | --- | --- | --- | --- | --- | | | | min | typ | max | | | | Off-state current | IDRM | | | 1.0 | mA | Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ | | Reverse current | IRRM | | | 1.0 | mA | | | On-state voltage | VTM | | | 1.4 | V | TC=25°C, ITM=5A | | Gate trigger voltage | VGT | | | 1 | V | VD=6V, RL=10Ω , TC=25°C | | Gate trigger current | IGT | | | 0.1 | mA | | | Gate non-trigger voltage | VGD | 0.1 | | | V | VD=1/2 ×VDRM , Tj=125°C, RGK=1kΩ | | Holding current | IH | | 1.0 | | mA | RGK=1kΩ , Tj=25°C | | Critical rate-of-rise of off-state voltage | dv/dt | | 20 | | V/µS | VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF | | Turn-off time | tq | | 30 | | µS | Tc=25°C | | Thermal resistance | Rth | | | 3.0 | °C/W | Junction to case | TF321M-A, TF341M-A, TF361M-A IT(AV)–PT(AV) Characteristics IT(AV)–Tc Ratings Average on-state power PT(AV) (W) 7 6 5 4 3 2 1 0 | 50Hz H | alf-cycle | sinewa | ve | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | θ : Co | | n angle | | | | | | | ° | DC | | 0° | | 80° | | | | | 150 | 180
° | | | | | θ 1 | | | | | | | | | | | | | | | | | 12 | 0° | | | | | | | | | | | | | | | | | | | | | | 9 | 0° | | | | | | | | | | | 0° | | | | | | | | | | | | | | | | | | | | | θ=3 | 0° | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | 6 nductio 0 1 2 3 4 5 Average on-state current IT(AV) (A) Case temperature TC (°C) 150 125 100 75 50 25 0 0 1 2 3 4 5 Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics vgt (Typical) Pulse trigger temperature Characteristics igt (Typical) vgt ( Gateat Tatrigandgertwvoltage) VGT (DCvolgatetagetrigat 25g°erC) 50 10 5 1 0.5 1 10 102 103 Pulse width tw (µs) VGT temperature Characteristics (Typical) 1.0 (VD=6V, RL=10Ω) 0.8 0.6 0.4 0.2 0 Gate trigger voltage VGT (V) –40 0 25 50 75 100 125 Junction temperature Tj (°C) Transient thermal resistance Characteristics

FAQs

What are the key features of the TO-220 3A high sensitive thyristor family (TF321M-A/TF341M-A/TF361M-A)?

It specifies repetitive peak off-state voltages (VDRM) of 200, 400, or 600 V, an average on-state current IT(AV) of 3 A, and a high sensitive gate trigger current IGT of 0.1 mA max.

Which absolute maximum rating parameters are provided in the document?

The document lists VDRM/VRRM and VDSM/VRSM limits, average/RMS/surge on-state current limits, peak forward and reverse gate voltage/current and gate power loss, junction temperature and storage temperature, plus thermal resistance.

What electrical characteristics related to triggering and switching are included?

It provides gate trigger voltage VGT and gate trigger current IGT, gate non-trigger voltage VGD, holding current IH, critical dv/dt and turn-off time tq, alongside off-state current IDRM, reverse current IRRM, and on-state voltage VTM under specified test conditions.

Oct 12, 2026

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