The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance - read online

Sep 4, 2026

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The paper presents theoretical and experimental results for a radio-measuring frequency transducer of optical radiation implemented with MOS transistor structures exhibiting negative differential resistance and an active inductive element. Transfer-function and sensitivity expressions are derived from a nonlinear-equation system, while measurements of current-voltage behavior in static and dynamic modes confirm a negative-resistance region that compensates oscillatory-circuit losses. Dependences of generation frequency on optical power and resulting sensitivity (9.7 to 24.5 kHz/μW/cm²) are reported, alongside a thermal model yielding steady-state time and maximum overheating estimates.

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Introduction

The Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures

JOURNAL OF NANO-AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО - ТА ЕЛЕКТРОННОЇ ФІЗИКИ Vol. 13 No 4, 04001(6pp) (2021) Том 13 № 4, 04001(6cc) (2021) The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance A.V. Osadchuk*, I.O. Osadchuk, A.O. Semenov Vinnytsia National Technical University, 95, Khmelnytske shose St., 21021 Vinnytsia, Ukraine (Received 21 March 2021; revised manuscript received 09 August 2021; published online 20 August 2021) The article deals with results of theoretical and experimental studies of a radio-measuring frequency transducer of optical radiation based on MOS transistor structures with negative differential resistance and an active inductive element. Analytical expressions of the transfer function and sensitivity equations are obtained on the basis of the solution of a system of non-linear equations. Experimental studies of the current-voltage dependences of the proposed transistor structure of the frequency converter of optical radiation in static and dynamic modes confirm the presence of a section with negative differential resistance on the I-V characteristic, which compensates for the losses in the oscillatory circuit. The theoretical and experimental dependences of the frequency of generation on the power of optical radiation are presented. The dependence of sensitivity of the developed transducer on the power of optical radiation varies from 9.7 kHz/μW/cm2 to 24.5 kHz/μW/cm2. A mathematical model of the thermal conditions of a radio-measuring frequency transducer of optical radiation has been developed. The calculation of non-stationary thermal conditions of the frequency transducer allowed to obtain the temperature field of the transducer integrated circuit. The time to achieve the steady state does not exceed 5.8·10 – 4 s. Moreover, the maximum tempera ture of overheating for the elements of the integrated circuit of the transducer does not exceed 2.49 􀁱 C. Keywords: Mathematical model, Thermal modes, Optical radiation, MOS transistor, Negative resistance. DOI: 10.21272/jnep. 13(4) .04001 PACS number: 85.30.Pq 1. INTRODUCTION In recent years optical microelectronic frequency transducers have been widely used [1-3] . They operate using an oscillator with electronic tuning of a generation frequency in a wide frequency band. Transistor structures having negative differential resistance can be used as primary converters of physical quantities; in this case, their sensitivity and measurement accuracy are significantly increased [4-6] . Structurally, they are made in the form of a semiconductor structure consisting of two MOS transistors and an active inductive element based on a MOS transistor which is connected with a phase shifting branch of resistor and capacitor. Furthermore, sensitive elements can be included in the electrical circuit of this structure in accordance with physical quantities, which extends the measurement range of the informative parameter [7-9] . The dependence of the parameters of the MOS transistors on the effect of the informative parameter in the dynamic mode allows the designing of radio-measuring frequency transducers of optical radiation with much better characteristics than similar devices. On the other hand, the use of field-effect transistor structures with negative differential resistance allows to design a self-generating transducer, in which both the capacitance and the inductance based on the field-effect transistors depend on the information parameter, that improves the accuracy and sensitivity of the transducer [10-12]. To study the properties of radio-frequency transducers, it is necessary to develop mathematical models, which we can use for calculating the dependence of the generation frequency on the influence of optical radiation, temperature, supply modes, as well as to carry out experimental studies that confirm the validity of the theoret

FAQs

What device is analyzed in the article?

The article analyzes a radio-measuring frequency transducer of optical radiation based on MOS transistor structures with negative differential resistance and an active inductive element.

How are the transfer function and sensitivity obtained?

Analytical expressions for the transfer function and sensitivity are derived using solutions to a system of non-linear equations.

What role does negative differential resistance play?

The negative-resistance section of the I–V characteristic compensates for losses in the oscillatory circuit, supporting stable operation.

Sep 4, 2026

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