PN2222A / MMBT2222A / PZT2222A - NPN General Purpose Amplifier

Nov 1, 2026

NPN general-purpose amplifier specification for PN2222A, MMBT2222A, and PZT2222A. Provides medium-power amplifier use up to 500 mA collector current, with absolute maximum ratings for voltages, currents, and operating/storage junction temperature. Includes thermal characteristics (device dissipation, junction-to-case and junction-to-ambient thermal resistance), electrical characteristics such as breakdown voltages, gain (hFE), saturation voltages, capacitances, noise figure, and switching times. Also lists typical performance curves including gain versus collector current, saturation voltage, cutoff current, and capacitance versus reverse bias.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages5

Reading Time13 min

AccessFree to download

Features

Pin and Package Information

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

Off Characteristics

On Characteristics

Small Signal Characteristics

Switching Characteristics

Typical Performance Characteristics

Figure 1-6

|

PN2222A / MMBT2222A / PZT2222ANPN General Purpose Amplifier | |
August 2010 | | --- | --- | --- | | Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19. | | | | PN2222A

TO-92
E B C | MMBT2222A
| PZT2222A
| | Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 1.0 A TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Max. Units PN2222A *MMBT2222A **PZT2222A PD Total Device Dissipation
Derate above 25°C 625
5.0 350
2.8 1,000
8.0 mW
mW/°C R θJC Thermal Resistance, Junction to Case 83.3 °C/W R θJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2. | | | © 2010 Fairchild Semiconductor Corporation [www.fairchildsemi.com](www.fairchildsemi.com) [PN2222A / MMBT2222A / PZT2222A Rev](PN2222A / MMBT2222A / PZT2222A Rev). A3 1 PN2222A / MMBT2222A / PZT2222A—NPN General Purpose Amplifier Electrical Characteristics Ta = 25°C unless otherwise noted | Symbol | Parameter | Test Condition | Min. | Max. | Units | | --- | --- | --- | --- | --- | --- | | Off Characteristics | | | | | | | BV(BR)CEO | Collector-Emitter Breakdown Voltage * | IC = 10mA, IB = 0 | 40 | | V | | BV(BR)CBO | Collector-Base Breakdown Voltage | IC = 10μA, IE = 0 | 75 | | V | | BV(BR)EBO | Emitter-Base Breakdown Voltage | IE = 10μA, IC = 0 | 6.0 | | V | | ICEX | Collector Cutoff Current | VCE = 60V, VEB(off) = 3.0V | | 10 | nA | | ICBO | Collector Cutoff Current | V CB = 60V, IE = 0
V CB = 60V, IE = 0, Ta = 125°C | | 0.01
10 | μA
μA | | IEBO | Emitter Cutoff Current | VEB = 3.0V, IC = 0 | | 10 | nA | | IBL | Base Cutoff Current | VCE = 60V, VEB(off) = 3.0V | | 20 | nA | | On Characteristics | | | | | | | h FE | DC Current Gain | IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 10mA, VCE = 10V, Ta = -55°C
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 1V * IC = 500mA, VCE = 10V * | 35
50
75
35
100
50
40 | 300 | | | VCE(sat) | Collector-Emitter Saturation Voltage * | IC = 150mA, IB = 15mAIC = 500mA, IB = 50mA | | 0.3
1.0 | V
V | | VBE(sat) | Base-Emitter Saturation Voltage * | IC = 150mA, IB = 15mAIC = 500mA, IB = 50mA | 0.6 | 1.2
2.0 | V
V | | Small Signal Characteristics | | | | | | | fT | Current Gain Bandwidth Product | IC = 20mA, VCE = 20V, f = 100MHz | 300 | | MHz | | Cobo | Output Capacitance | V CB = 10V, IE = 0, f = 1MHz | | 8.0 | pF | | Cibo | Input Capacitance | VEB = 0.5V, IC = 0, f = 1MHz | | 25 | pF | | rb’Cc | Collector Base Time Constant | IC = 20mA, V CB = 20V, f = 31.8MHz | | 150 | pS | | NF | Noise Figure | IC = 100μA, VCE = 10V, RS = 1.0KΩ, f = 1.0KHz | | 4.0 | dB | | Re(hie) | Real Part of Common-Emitter High Frequency Input Impedance | IC = 20mA, VCE = 20V, f = 300MHz | | 60 | Ω | | Switching Characteristics | | | | | | | td | Delay Time | V CC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA | | 10 | ns | | tr | Rise Time | | | 25 | ns | | ts | Storage Time | V CC = 30V, IC = 150mA, IB1 = IB2 = 15mA | | 225 | ns | | tf | Fall Time | | | 60 | ns | * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation [www.fairchildsemi

FAQs

What are the absolute maximum ratings for PN2222A/M.../PZT2222A?

The document lists maximum VCEO (40 V), VCBO (75 V), VEBO (6.0 V), collector current IC up to 1.0 A for absolute maximum ratings, and junction temperature range from -55°C to 150°C.

What thermal parameters and device dissipation are provided?

Thermal characteristics include total device dissipation with derating above 25°C, plus junction-to-case thermal resistance (RθJC) and junction-to-ambient thermal resistance (RθJA), with mounting assumptions on FR-4 PCB.

Which electrical and switching parameters are specified?

Electrical characteristics cover breakdown voltages, collector cutoff currents, DC current gain (hFE), saturation voltages (VCE(sat), VBE(sat)), small-signal parameters like fT and capacitances, as well as switching timings such as delay time (td) and storage time (ts).

Nov 1, 2026

Uploaded by Sophia Brooks