N-CHANNEL 500V-0.31Ω - 14A TO-247 PowerMesh II MOSFET - Datasheet - May 2001

Oct 12, 2026

Upload by hdkawk

PowerMESH II is a high-voltage N-channel MOSFET featuring extremely high dv/dt capability and gate charge minimized design. The datasheet provides absolute maximum ratings, thermal data, avalanche characteristics, and electrical characteristics at defined test conditions. It includes dynamic switching parameters for turn-on and turn-off, plus source-drain diode reverse-recovery data. Mechanical dimensions for TO-247 are specified alongside test circuit references for unclamped inductive loads and gate-charge measurements.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages9

Reading Time23 min

AccessFree to download

PowerMESH II Overview

Applications

Absolute Maximum Ratings

Thermal Data

Avalanche Characteristics

Electrical Characteristics (TCASE=25°C)

Switching On/Off

Source-Drain Diode

Test Conditions and Figures

TO-247 Mechanical Data

STW14NC50 N-CHANNEL 500V-0.31Ω - 14A TO-247 PowerMesh􀁝 II MOSFET TYPE STW14NC50 V DSS 500V RDS(on) < 0 .38Ω ID 14 A ■ TYPICAL RDS(on) = 0 .31Ω EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED ■ DESCRIPTION The PowerMESH􀁝 II is the evolution of the first generation of MESH OVERLAY􀁝 . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING ■ EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter V DS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100° CIDM (●) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 ±30 14 8.7 56 190 1.5 3.5 –65 to 150 150 (1)ISD ≤14A, di/dt ≤100A/µs, V DD≤ V (BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns ° C ° C May 2001 1/8 STW14NC50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, V DD = 50 V) 0.6630300 Max Value 14 800 °C/W °C/W ° C Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V (BR)DSS IDSS IGSS ON (1) Symbol VGS(th) RDS(on) DYNAMIC Symbol gfs Ciss Coss Crss Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (V DS = 0) Parameter Gate Threshold Voltage Static Drain-source On Resistance Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID = 250 µA, VGS = 0 V DS = Max Rating V DS = Max Rating, TC = 125 ° C VGS = ±30V Test Conditions V DS = VGS, ID = 250 µAVGS = 10V, ID = 7A Test Conditions V DS > ID(on) x RDS(on)max, ID =7A V DS = 25V, f = 1 MHz, VGS = 0 Min. 500 Min. 2 Min. Typ. Typ. 3 0.31 Typ. 13 2000 300 43 Max. 1 50 ± 100 Max. 4 0.38 Max. Unit V µA µA nA Unit V Ω Unit S pF pF pF 2/8 STW14NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Q gs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time SOURCE DRAIN DIODE Symbol ISDISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions V DD = 250V, ID = 7 A RG = 4 .7Ω, VGS = 10V (see test circuit, Figure 3) V DD = 400V, ID = 14 A, VGS = 10V, RG = 4 .7Ω Test Conditions V DD = 400V, ID = 14 A, RG = 4 .7Ω, VGS = 10V (see test circuit, Figure 5) Test Conditions ISD = 14 A, VGS = 0 ISD = 14 A, di/dt = 100A/µs, V DD = 100V, Tj = 150° C (see test circuit, Figure 5) Min. Min. Min. Typ. 20 23 75 10 38 Typ. 25 30 62 Typ. 670 6.7 20 Max. 90 Max. Max.

FAQs

What are the key electrical capabilities of the STW14NC50 MOSFET?

It supports a 500 V drain-source breakdown rating with a low typical RDS(on) around 0.31 Ω and a 14 A drain current rating. The device is also described as having extremely high dv/dt capability and gate charge minimized design.

How do the datasheet switching parameters define turn-on and turn-off performance?

The datasheet lists turn-on delay and rise times (td(on), tr), total gate charge (Qg) and gate-source/drain charge components. It also provides off-voltage rise/fall times and cross-over time for the switching-off characterization.

What information is provided for ruggedness and protection testing?

Avalanche characteristics include repetitive or non-repetitive avalanche current and single pulse avalanche energy, with constraints related to pulse width and maximum junction temperature. Notes also specify limits for safe operating area.

Oct 12, 2026

Upload by hdkawk