Halide Perovskite Heterostructures for High-Performance Light-Emitting Diodes

Sep 29, 2026

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Metal halide perovskites have emerged as highly promising emissive-layer candidates for next-generation light-emitting diodes, driven by narrow emission linewidths, high photoluminescence quantum yields, and tunable emission wavelengths. High-performance perovskite LEDs require efficient radiative recombination, low defect density, minimal ion mobility, and strong carrier confinement. Perovskite/perovskite heterostructures provide a route to engineer these properties by passivating defects, tailoring bandgaps, and suppressing ion migration. Devices based on PPHS architectures deliver improved external quantum efficiency and operational stability. This review surveys vertical, lateral, and bulk configurations, fabrication strategies, and the mechanisms supporting efficiency and durability, while outlining remaining challenges and future prospects.

LanguageEnglish

CategoryResearch & Report

FormatPDF

Pages31

Reading Time1 h 18 min

AccessFree to download

Highlights

Abstract

Keywords

Introduction

Perovskite materials and their properties

Heterostructure concept and classification

Perovskite/perovskite heterojunctions (PPHSs)

e-ISSN 2150-5551 CN 31-2103/TB REVIEW [https://doi.org/10.1007/s40820-025-02038-y](https://doi.org/10.1007/s40820-025-02038-y) Cite as Nano-Micro Lett.(2026) 18:185 Received: 15 September 2025 Accepted: 26 November 2025 Published online: 5 January 2026 © The Author(s) 2026 Halide Perovskite Heterostructures for High‑Performance Light‑Emitting Diodes Yiming Huo 1, Tingwei He 1, Shaopeng Yang 1, Yuanzhi Jiang2, Changjiu Sun 1 * HIGHLIGHTS • This review systematically summarizes the application of perovskite/perovskite heterostructures (PPHSs) in light-emitting diodes (LEDs), highlighting their critical roles in defect passivation, carrier confinement, lattice stabilization, and light management. • This review categorized PPHSs by dimensional combinations (e.g., 3D/3D, 2D/3D, 0D/3D) and spatial architectures—vertical, lateral, and bulk heterostructures—elucidating the structure-property relationships for efficient LEDs. • Key challenges and future directions are outlined, including advances in high-resolution characterization, carrier dynamics analysis, and controlled synthesis of PPHSs for next-generation optoelectronic applications. ABSTRACT Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes (LEDs) due to their narrow emission linewidths, high photoluminescence quantum yields, and tunable emission wavelengths. Achieving high-performance perovskite LEDs (PeLEDs) requires the emissive layer to possess efficient radiative recombination, low defect density, minimal ion mobility, and effective carrier confinement. Perovskite/perovskite heterostructure (PPHS) offers a compelling approach for engineering emissive layers with these desired attributes, owing to their ability to passivate surface defects, tailor bandgaps, and suppress ion migration. PeLEDs based on PPHS have demonstrated superior performance compared to single-phase devices, particularly in terms of external quantum efficiency and operational stability. This review provides a comprehensive overview of the typical PPHS architectures applied in PeLEDs, including vertical, lateral, and bulk configurations. We discuss representative fabrication strategies and the associated optoelectronic properties of these heterostructures, highlighting the mechanisms by which they enhance device efficiency and stability. Finally, we explore the remaining challenges and prospects for the application of PPHS in PeLEDs and other luminescent technologies. KEYWORDS Halide perovskite; Heterostructure; Electroluminescence; Perovskite light-emitting diode * Changjiu Sun, [cj.sun@hbu.edu.cn](cj.sun@hbu.edu.cn) 1 Province-Ministry Co-Construction Collaborative Innovation Center of Hebei Photovoltaic Technology, Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, Hebei, People’s Republic of China 2 State Key Laboratory of Advanced Chemical Power Sources, Frontiers Science Center for New Organic Matter, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry, Nankai University, Tianjin 300071, People’s Republic of China 1 Introduction Metal halide perovskites have emerged as a highly attractive class of semiconductor materials, garnering significant attention in both academia and industry due to their outstanding electrical and optical properties [1–4] . These materials exhibit exceptional defect tolerance, and with appropriate defect passivation strategies, their photoluminescence quantum yield (PLQY) can be enhanced to near unity [5 , 6]. Moreover, their intrinsically narrow emission linewidths (full width at half maximum ≤ 15 nm) enable ultra-high color purity, achieving color gamuts exceeding 140% of the National Television Standards Committee (NTSC) standard [7, 8] . Additionally, their compatibility with low-temperature solution proce

FAQs

Why are metal halide perovskites considered promising emissive layers for LEDs?

They offer narrow emission linewidths, high photoluminescence quantum yields, and tunable emission wavelengths. The materials also show strong defect tolerance that can be improved via defect passivation.

What key requirements determine high-performance perovskite LEDs?

The emissive layer must support efficient radiative recombination, low defect density, minimal ion mobility, and effective carrier confinement to improve device performance and stability.

How do perovskite/perovskite heterostructures improve PeLED performance compared with single-phase devices?

PPHSs passivate surface defects, tailor bandgaps, and suppress ion migration. This enables improved radiative recombination and carrier confinement, leading to higher external quantum efficiency and better operational stability.

Sep 29, 2026

Upload by Oliver