FQP7N80C - QFET TM - Features

Oct 12, 2026

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FQP7N80C/FQPF7N80C are 800V N-channel enhancement-mode power MOSFETs using Fairchild planar stripe DMOS (QFET) technology. The devices are designed to reduce on-state resistance, improve switching performance, and tolerate high-energy pulses in avalanche and commutation modes, making them suitable for high-efficiency switch-mode power supplies. Key parameters include 6.6A drain current, low gate charge and low Crss, fast switching capability, and 100% avalanche testing, with comprehensive ratings and electrical characteristics provided.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages10

Reading Time25 min

AccessFree to download

General Description

Features

Absolute Maximum Ratings

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics and Maximum Ratings

Notes

Typical Characteristics

FQP7N80C/FQPF7N80C ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 |

FQP7N80C/FQPF7N80C 800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. | | QFET TM
Features
• 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability | | | | | --- | --- | --- | --- | --- | --- | |

TO-220 FQP Series

G D S
TO-220FFQPF Series
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| | | | | | | Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FQP7N80C FQPF7N80C Units V DSS Drain-Source Voltage 800 V ID Drain Current -Continuous (TC = 25°C)
-Continuous (TC = 100°C) 6.6 6.6 * A 4.2 4.2 * A IDM Drain Current -Pulsed (Note 1) 26.4 26.4 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ IAR Avalanche Current (Note 1) 6.6 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C)
-Derate above 25°C 167 56 W 1.33 0.44 W/°C TJ , TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 °C
* Drain current limited by maximum junction temperature.
Thermal Characteristics | | | | | | | Symbol | Parameter | | FQP7N80C | FQPF7N80C | Units | | R θJC | Thermal Resistance, Junction-to-Case | | 0.75 | 2.25 | °C/W | | R θJS | Thermal Resistance, Case-to-Sink Typ. | | 0.5 | -- | °C/W | | R θJA | Thermal Resistance, Junction-to-Ambient | | 62.5 | 62.5 | °C/W | | | | | | | | FQP7N80C/FQPF7N80C ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 Electrical Characteristics TC = 25°C unless otherwise noted | Symbol | Parameter | Test Conditions | Min | Typ | Max | Units | | --- | --- | --- | --- | --- | --- | --- | Off Characteristics | BV DSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 µA | 800 | -- | -- | V | | --- | --- | --- | --- | --- | --- | --- | | ∆BV DSS
/ ∆TJ | Breakdown Voltage Temperature Coefficient | ID = 250 µA, Referenced to 25°C | -- | 0.93 | -- | V/°C | | IDSS | Zero Gate Voltage Drain Current | V DS = 800 V, VGS = 0 V | -- | -- | 10 | µA | | | | V DS = 640 V, TC = 125°C | -- | -- | 100 | µA | | IGSSF | Gate-Body Leakage Current, Forward | VGS = 30 V, V DS = 0 V | -- | -- | 100 | nA | | IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30 V, V DS = 0 V | -- | -- | -100 | nA | On Characteristics | VGS(th) | Gate Threshold Voltage | V DS = VGS, ID = 250 µA | 3.0 | -- | 5.0 | V | | --- | --- | --- | --- | --- | --- | --- | | RDS(on) | Static Drain-Source
On-Resistance | VGS = 10 V, ID = 3.3 A | -- | 1.57 | 1.9 | Ω | | gFS | Forward Transconductance | V DS = 50 V, ID = 3.3 A (Note 4) | -- | 5.5 | -- | S | Dynamic Characteristics | Ciss | Input Capacitance | V DS = 25 V, VGS = 0 V, f = 1.0 MHz | -- | 1290 | 1680 | pF | | --- | --- | --- | --- | --- | --- | --- | | Coss | Output Capacitance | | -- | 120 | 155 | pF | | Crss | Reverse Transfer Capacitance | | -- | 10 | 13 | pF | Switching Characteristics | td(on) | Turn-On Delay Time | V DD = 400 V, ID = 6.6 A, RG = 25 Ω
(Note 4, 5) | -- | 35 | 80 | ns | | --- | --- | --- | --- | --- | --- | --- | | tr | Turn-On Rise Time | | -- | 100 | 210 | ns | | td(off) | Turn-Off Delay Time | | -- | 50 | 110 | ns | | t f | Turn-Off Fall Time | | -- | 60 | 130 | ns | | Qg | Total Gate Charge | V DS = 640 V, ID = 6.6 A, VGS = 10 V
(Note 4, 5) | -- | 27 |

FAQs

What technology is used for FQP7N80C/FQPF7N80C MOSFETs?

They are produced using Fairchild’s proprietary planar stripe DMOS technology under the QFET TM platform.

What are the key features targeting low losses and fast switching?

The devices emphasize minimized on-state resistance, superior switching performance, low gate charge (typical 27 nC), low Crss (typical 10 pF), and fast switching, with 100% avalanche tested performance.

What is the main absolute maximum rating for drain-source voltage and drain current?

The drain-source voltage rating V DSS is 800 V, and the continuous drain current is 6.6 A (at TC = 25°C) for both FQP7N80C and FQPF7N80C.

Oct 12, 2026

Upload by Stanley