EVERLICHT Technical Data Sheet - 5mm Infrared LED T-13/4IR333C-A-TR1(R)

Q: What is the peak wavelength and key electrical feature of IR333C-A-TR1(R)?

The peak wavelength is λp=940nm. The sheet also highlights low forward voltage and high radiant intensity.

Q: What are the absolute maximum ratings for current, voltage, and temperatures?

The continuous forward current is IF=100mA, peak forward current is Iep=1.0A, and reverse voltage is VR=5V. Operating temperature ranges from -25 to +85℃, with storage from -40 to +85℃ and soldering temperature Tsol=260℃.

Q: What storage conditions and lead-forming practices are recommended?

Store the phototransistor/LED at 30℃ or less and 70%RH or less after shipment, with a storage life limit of 3 months (and up to a year in a sealed container if stored beyond 3 months). Lead formation should be done before soldering and avoided stress on the device package.

Nov 1, 2026

Uploaded by Aditya

Technical data sheet for EVERLIGHT’s 5mm infrared emitting diode IR333C-A-TR1(R). Specifies key features such as high radiant intensity, peak wavelength at 940nm, low forward voltage, RoHS compliance, EU REACH compliance, and halogen-free requirements. Provides device descriptions and application guidance, device selection data, absolute maximum ratings, and electro-optical characteristics including radiant intensity, forward voltage, reverse current, and viewing angle. Includes packaging/taping dimensions, label and packing quantity information, lead forming and storage notes.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages11

Reading Time28 min

AccessFree to download

Features

Descriptions

Applications

Device Selection Guide

Absolute Maximum Ratings

Electro-Optical Characteristics

Rank / Bin Information

Typical Electro-Optical Characteristics Curves

Package Dimensions

Taping Dimensions

Label and Packing Quantity Specifications

Notes

EVERLICHT # Technical Data Sheet 5mm Infrared LED,T-13/4IR333C-A-TR1(R) Features ·High reliability ·High radiant intensity ·Peak wavelength λp=940nm ·2.54mm Lead spacing ·Low forward voltage ·Pb free ·This product itself will remain within RoHS compliant version. ·Compliance with EU REACH ·Compliance Halogen Free(Br<900ppm,Cl<900ppm,Br+Cl<1500ppm) Descriptions ●EVERLIGHT’S Infrared Emitting Diode (IR333C-A-TR1(R))isa high intensity diode,molded in a water clear plastic package. ·The device is spectrally matched with phototransistor,photodiode and infrared receiver module. ## Applications ·Infrared applied system Device Selection Guide | LED Part No. | Chip | Lens Color | | --- | --- | --- | | | Material | | | IR333C-A-TR1(R) | GaAlAs | Clear | Absolute Maximum Ratings(Ta=25℃) | Parameter | Symbol | Rating | Units | | --- | --- | --- | --- | | Continuous Forward Current | IF | 100 | mA | | Peak Forward Current(*1) | Iep | 1.0 | A | | Reverse Voltage | VR | 5 | V | | Operating Temperature | Topr | -25～+85 | ℃ | | Storage Temperature | Tstg | -40～+85 | ℃ | | Soldering Temperature(*2) | Tsol | 260 | ℃ | | Power Dissipation at(or below)
25℃Free Air Temperature | Pa | 150 | mW | Notes:*1:Iep Conditions--Pulse Width≤100μs and Duty≤1%. *2:Soldering time≤5 seconds. Electro-Optical Characteristics(Ta=25℃) | Parameter | Symbol | Condition | Min. | Typ. | Max. | Units | | --- | --- | --- | --- | --- | --- | --- | | Radiant Intensity | Ee | Ir=20mA | 7.8 | 20 | -- | mW/sr | | | | Ir=100mA
Pulse Width≤100μs,Duty≤1% | -- | 100 | -- | | | | | Ir=1A
Pulse Width≤100μs,Duty≤1%. | -- | 1000 | -- | | | Peak Wavelength | λp | Ir=20mA | -- | 940 | -- | nm | | Spectral
Bandwidth | △λ | Ir=20mA | -- | 45 | -- | nm | | Forward Voltage | VF | I=20mA | | 1.2 | 1.5 | V | | | | Ir=100mA
Pulse Width≤100μs,Duty≤1% | -- | 1.4 | 1.7 | | | | | I=1A
Pulse Width≤100μs,Duty≤1%. | -- | 2.6 | 4.0 | | | Reverse Current | IR | VR=5V | -- | -- | 10 | μA | | View Angle | 201/2 | I=20mA | -- | 20 | -- | deg | Rank Condition:Ir=20mA Unit:mW/sr | Bin Number | M | N | P | Q | R | | --- | --- | --- | --- | --- | --- | | Min | 7.80 | 11.00 | 15.0 | 21.0 | 30 | | Max | 12.50 | 17.60 | 24.0 | 34.0 | 48 | Note: *Measurement Uncertainty of Forward Voltage:±0.1V*Measurement Uncertainty of Luminous Intensity:±10%*Measurement Uncertainty of Dominant Wavelength±1.0nm Typical Electro-Optical Characteristics Curves Fig.1 Forward Current vs.Ambient Temperature Fig.2 Spectral Distribution Forward Curent (mA) Relative R adin atinten s ity(%) 700725750775800825850875900925950975100010251050Wavelength (nm) Ambient Temperature(℃) Fig.3 Peak Emission WavelengthAmbient Temperature Fig.4 Forward Currentvs.Forward Voltage Peak Emission Wavelength入p(m) ward Current I (mA) Forward Voltage(V) Ambient Temperature(℃) Typical Electro-Optical Characteristics Curves Fig.5 Relative Intensity vs. Fig.6 Relative Radiant Intensity vs. Forward Current1000 30°100 Ie-Radiant Intensity (mW/sr) iauIv nauiailt iTtCiIlty 40° 1.0 0.950°10 60° 0.8 0.7 80°00.60.40.20 0.20.40.6IF-Forward Current(mA) Package Dimensions Notes:1.All dimensions are in millimeters ### 2.Tolerances unless dimensions ±0.25mm Taping Dimensions Taping Sizes | Symbol Item | Symbol | Specifications | | | | --- | --- | --- | --- | --- | | | | Avg | | Tolerance | | | | mm | Inch | mm | | Tape Feed Hold Diameter | D | 4.0 | 0.157 | ±0.2 | | Component Lead Pitch | F | 2.54 | 0.1 | +0.8/-0.2 | | Front-To-Rear Deflection | △H | 0° | 0 | ±5° | | Feed Hole To Button Of Component | H1 | 18.5

FAQs

What is the peak wavelength and key electrical feature of IR333C-A-TR1(R)?

The peak wavelength is λp=940nm. The sheet also highlights low forward voltage and high radiant intensity.

What are the absolute maximum ratings for current, voltage, and temperatures?

The continuous forward current is IF=100mA, peak forward current is Iep=1.0A, and reverse voltage is VR=5V. Operating temperature ranges from -25 to +85℃, with storage from -40 to +85℃ and soldering temperature Tsol=260℃.

What storage conditions and lead-forming practices are recommended?

Store the phototransistor/LED at 30℃ or less and 70%RH or less after shipment, with a storage life limit of 3 months (and up to a year in a sealed container if stored beyond 3 months). Lead formation should be done before soldering and avoided stress on the device package.

Nov 1, 2026

Uploaded by Aditya