EPC2057 - Enhancement Mode Power Transistor - eGaN® FET Datasheet

Sep 18, 2026

Upload by Levi

EPC2057 enhancement-mode eGaN® FET datasheet provides key electrical and thermal specifications for a 50 V drain-to-source power transistor with low RDS(on) and fast switching characteristics. It summarizes recommended gate drive operation (5 V typical, 0 V off, negative voltage not required), maximum ratings for voltage, current, and temperatures, plus static and dynamic parameters such as capacitances, gate charge, and recovery behavior. Application guidance highlights use in DC-DC conversion, USB-C chargers, LED lighting, and motor drives, with figures supporting transfer and RDS(on) trends.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages9

Reading Time23 min

AccessFree to download

Maximum Ratings

Thermal Characteristics

Static Characteristics

Dynamic Characteristics

Typical Performance Figures

| eGaN® FET DATASHEET | EPC2057 | | --- | --- | |
EPC2057 – Enhancement Mode Power Transistor
V DS , 50 VRDS(on) , 8.5 mΩ max ID , 9.6 A

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V (negative voltage not needed)
• Top of FET is electrically connected to source
Questions:
Ask a GaN Expert

Maximum Ratings PARAMETER VALUE UNIT VDS Drain-to-Source Voltage (Continuous) 50 V Drain-to-Source Voltage (Repetitive Transient)(1) 60 ID Continuous (TA = 25°C) 9.6 A Pulsed (25°C, TPULSE = 300 µs) 66 VGS Gate-to-Source Voltage 6 V Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 °C TSTG Storage Temperature -40 to 150
(1) Pulsed repetitively, duty cycle factor (DCFactor) ≤ 1%; See Figure 13.
Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 2.3 °C/W RθJB Thermal Resistance, Junction-to-Board 7 RθJA Thermal Resistance, Junction-to-Ambient(2) 72.5 RΘJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 82 RΘJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90155 EVB(3)) 68.5

Revised April 8, 2025

Die Size: 1.5 x 1.2 mm
EPC2057 eGaN® FETs are supplied only in passivated die form with solder bars.
Applications
• DC-DC converters
• Isolated DC-DC converters
• USB-C battery chargers
• LED lighting
• 12 V–24 V input motor drives
Benefits
• Ultra high efficiency
• No reverse recovery
• Ultra low QG
• Small footprint
(2) RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See [https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf](https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf) for details.
(3) Determined with devices mounted on EVB in half-bridge configuration
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.031mA 50 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 40 V 0.004 0.031 mA IGSS Gate-to-Source Forward Leakage VGS = 5 V 0.004 0.8 Gate-to-Source Forward Leakage\# VGS = 5 V, TJ = 125°C 0.04 1.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.004 0.026 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 2 mA 0.7 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 6 A 6 8.5 mΩ VSD Source-Drain Forward Voltage\# VGS = 0 V, IS = 0.5 A 1.4 V
Scan QR code or click link below for more information including reliability reports, device models, demo boards!

[https://l.ead.me/EPC2057](https://l.ead.me/EPC2057)
\# Defined by design. Not subject to production test. | | | EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2025 | For more information: [info@epc-co.com](info@epc-co.com | 1)[ | 1](info@epc-co.com | 1) | | | eGaN® FET DATASHEET | EPC2057 | | --- | --- | | | | |
Dynamic Characteristics\# (TJ = 25°C unless otherwise stated) | | | PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CISS Input Capacitance VDS = 25 V, VGS = 0 V 383 444 pF CRSS Reverse Transfer Capacitance 3 COSS Output Capacitance 172 218 COSS(ER) Effective Output Capacitance, Energy Related (Note 1) VDS = 0 to 25 V, VGS = 0 V 220 COSS(TR) Effective Output Capacitance, Time Related (Note 2) 265 RG Gate Resistance 0.8 Ω QG Total Gate Charge VDS = 25 V, VGS = 5 V, ID = 6 A 3.0 3.5 nC QGS Gate-to-Source Charge VDS = 25 V, ID = 6 A 1.2 QGD Gate-to-Drain Charge 0.5 QG(TH) Gate Charge at Threshold 0.8 QOSS Outpu

FAQs

What is the maximum drain-to-source voltage and operating current rating for EPC2057?

EPC2057 is rated for a continuous VDS of 50 V and a maximum continuous ID of 9.6 A (TA = 25°C). Pulsed operation is also specified with higher voltage limits and conditions defined by a duty cycle factor.

What gate drive voltage is recommended for reliable switching?

The datasheet specifies gate drive with Gate Drive ON = 5 V typical and OFF = 0 V, stating that negative voltage is not needed. It also notes that the top of the FET is electrically connected to the source.

Which applications does the datasheet list for EPC2057?

Listed applications include DC-DC converters, isolated DC-DC converters, USB-C battery chargers, LED lighting, and 12 V–24 V input motor drives.

Sep 18, 2026

Upload by Levi