D45H8 - PNP Power Amplifier - Absolute Maximum Ratings, Notes, and Electrical Characteristics

Oct 12, 2026

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PNP power amplifier specifications for the D45H8/NZT45H8 device, including absolute maximum ratings, operating and storage junction temperature range, and key thermal characteristics. The notes define a 150°C maximum junction temperature basis and steady-state limits, with guidance to consult the factory for pulsed or low duty-cycle applications. Electrical characteristics cover collector-emitter breakdown voltage, collector and emitter cutoff currents, gain hFE, saturation voltages, and on-state voltages. Additional sections list small-signal bandwidth product and typical DC/AC performance relationships.

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CategoryHealthcare

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PNP Power Amplifier

Absolute Maximum Ratings

NOTES:

Thermal Characteristics

Electrical Characteristics

OFF CHARACTERISTICS

ON CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

DC Typical Characteristics

AC Typical Characteristics

D45H8 TO-220 # PNP Power Amplifier This device is designed for power amplifier,regulator and switchingcircuits where speed is important.Sourced from Process 5Q. # Absolute Maximum Ratings* *These ratings are iming values above which the serviceabilty o any semiconductor device may be impaied. # NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2)These are steady state limits.The factory should be consulted on applications involving pulsed or low duty cycle operations. # Thermal Characteristics *Device mounted on FR-4 PCB 36mm×18mm×1.5mm;mounting pad for the collector lead min.6 cm². D45H8一NZT45H8 NZT45H8 E B SOT-223 TA=25°C unless otherwise noted | Symbol | Parameter | Value | Units | | --- | --- | --- | --- | | VcEo | Collector-Emitter Voltage | 60 | V | | Ic | Collector Current -Continuous | 8.0 | A | | TJ,Tstg | Operating and StorageJunction Temperature Range | -55 to+150 | ℃ | TA=25°C unless otherwise noted | Symbol | Characteristic | Max | | Units | | --- | --- | --- | --- | --- | | | | D45H8 | *NZT45H8 | | | Po | Total Device Dissipation
Derate above 25℃ | 60
480 | 1.5
12 | W
mW/℃ | | Reuc | Thermal Resistance,Junction to Case | 2.1 | | ℃N | | ReJA | Thermal Resistance,Junction to Ambient | 62.5 | 83.3 | ℃N | D45H8/ NZT45H8 PNP Power Amplifier(continued)OFF CHARACTERISTICS # Electrical Characteristics TA=25°C unless otherwise noted | Symbol | Parameter | Test Conditions | Min | Max | Units | | --- | --- | --- | --- | --- | --- | | VBR)CEO | Collector-Emitter Breakdown Voltage | lc=100 mA,I=0 | 60 | | V | | --- | --- | --- | --- | --- | --- | | IcBo | Colector-Cutoff Current | VcB=60V,lE=0 | | 10 | μA | | IEBO | Emitter-Cutoff Current | VEB=5.0 V,Ic=0 | | 100 | μA | # ON CHARACTERISTICS | hFE | DCCurrent Gain | Ic=2.0 A,VcE=1.0V
lc=4.0 A,VcE=1.0V | 60
40 | | | | --- | --- | --- | --- | --- | --- | | VcE(sat) | Collector-Emitter Saturation Voltage | Ic=8.0 A,Ig=0.4A | | 1.0 | V | | VBE(sat) | Base-Emitter On Voltage | Ic=8.0 A,Is=0.8 A | | 1.5 | V | | VBE(on) | Base-Emitter On Voltage | Ic=10 mA,VcE=2.0V | 0.54 | 0.65 | V | # SMALL SIGNAL CHARACTERISTICS | f | Current Gain -Bandwidth Product | Ic=500 mA,VcE=10V, | 40 | | MHz | | --- | --- | --- | --- | --- | --- | # DC Typical Characteristics Typical Pulsed Current Gainvs Collector CurrentIc-COLLECTOR CURRENT(A) Collector-Emitter SaturationVoltage vs Collector CurrentIc-COLLECTOR CURRENT(A) # DC Typical Characteristics (continued) Base-Emitter SaturationBase-Emitter ON Voltage vsVoltage vs Collector CurrentCollector Currentlc-COLLECTOR CURRENT(A) Collector-Cutoff Currentvs Ambient TemperatureTA-AMBIENT TEMPERATURE(℃) # AC Typical Characteristics Safe Operating Area TO-220 lc-30LLECTOR CURRENT(A) VCE-COLLECTOR-EMITTER VOLTAGE(V) D45H8/ NZT45H8 AC Typical Characteristics (continued) Maximum Power DissipationMaximum Power Dissipationvs.Case Temperaturevs.Ambient Temperature0 20406080100120140160Tc-CASE TEMPERATURE(℃)TA-AMBIENT TEMPERATURE(℃) D(MAX)-MAXIMUW POWER DISSIPATI0N(W( P0(MAX)一MAXIMUM POWER DISSIPATI0N)M POWER DISSIPATION vsAMBIENT TEMPERATURETEMPERATURE(℃) Thermal Response in TO-220 Package rt-TRANSIENTTHERMAL t1-TIME(ms) D45H8/ NZT45H8

FAQs

What is the maximum junction temperature assumption for the absolute maximum ratings?

The notes state the ratings are based on a maximum junction temperature of 150°C.

What temperature range is specified for operating and storage junction temperatures?

The junction operating and storage temperature range is given as -55 to +150°C.

Which electrical parameters are listed under OFF and ON characteristics?

OFF characteristics include collector-emitter breakdown voltage and cutoff currents, while ON characteristics include hFE, VCE(sat), and VBE(sat)/VBE(on) values with test conditions.

Oct 12, 2026

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