CHARACTERIZATION METHODS FOR SUBMICRON MOSFETs - Consulting Editor Mohammed Ismail and Analog Circuits and Signal Processing series

Sep 21, 2026

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Characterization methods for submicron MOSFETs are presented within an engineering and computer science series focused on analog circuits and signal processing. The contents address static measurements and parameter extraction, including MOSFET DC modeling, ohmic and saturation extraction regimes, and practical measuring techniques. It further covers small-signal characterization of VLSI MOSFETs via AC modeling, channel frequency response, split-admittance and dynamic transconductance, followed by charge pumping experiments and deep level transient spectroscopy.

LanguageEnglish

CategoryResearch & Report

FormatPDF

Pages256

Reading Time10 h 45 min

AccessFree to download

Contents

List of Contributors

Preface

1 Static Measurements and Parameter Extraction

2 Small Signal Characterization of VLSI MOSFETs

3 Charge Pumping

4 Deep Level Transient Spectroscopy

CHARACTERIZATIONMETHODS FORSUBMICRONMOSFETsKluver Academic Publishers edited byHisham Haddara — BM # CHARACTERIZATION METHODSFOR SUBMICRONMOSFETs THE KLUWER INTERNATIONAL SERIESIN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSINGConsulting EditorMohammed IsmailOhio State University Related Titles: LOW-VOLTAGE LOW-POWER ANALOG INTEGRATED CIRCUITS,edited by WouterSerdijn ISBN:0-7923-9608-1 INTEGRATED VIDEO-FREQUENCY CONTINUOUS-TIME FILTERS:High-PerformanceRealizations in BiCMOS,Scott D.Willingham,Ken MartinISBN:0-7923-9595-6 FEED-FORWARD NEURAL NETWORKS:Vector Decomposition Analysis,Modelling andAnalog Implementation,Anne-Johan AnnemaISBN:0-7923-9567-0 FREQUENCY COMPENSATION TECHNIQUES]LOW-POWER OPERATIONALAMPLIFIERS,Ruud Easchauzier,Johan HuijsingISBN:0-7923-9565-4 ANALOG SIGNAL GENERATION FOR BIST OF MIXED-SIGNAL INTEGRATEDCIRCUITS,Gordon W.Roberts,Albert K.LuISBN:0-7923-9564-6 INTEGRATED FIBER-OPTIC RECEIVERS,Aaron Buchwald,Kenneth W.MartinISBN:0-7923-9549-2 MODELING WITH AN ANALOG HARDWARE DESCRIPTION LANGUAGE, H.Alan Mantooth,Mike FiegenbaumISBN:0-7923-9516-6 LOW-VOLTAGECMOSOPERATIONALAMPLIFIERS:Theory,Design and Implementation,Satoshi Sakurai,Mohammed IsmailISBN:0-7923-9507-7 ANALYSIS AND SYNTHESIS OF MOS TRANSLINEAR CIRCUITS,Remco J.WiegerinkISBN:0-7923-9390-2 COMPUTER-AIDED DESIGN OF ANALOG CIRCUITS AND SYSTEMS,L.Richard Carley,Ronald S.Gyurcsik ISBN:0-7923-9351-1 HIGH-PERFORMANCE CMOS CONTINUOUS-TIME FILTERS,José Silva-Martínez,MichielSteyaert,Willy Sansen ISBN:0-7923-9339-2 SYMBOLIC ANALYSIS OF ANALOG CIRCUITS:Techniques and Applications,LawrenceP.Huelsman,Georges G.E.GielenISBN:0-7923-9324-4 DESIGNOFLOW-VOLTAGEBIPOLAROPERATIONALAMPLIFIERS,M.Jeroen Fonderie,Johan H.Huijsing ISBN:0-7923-9317-1 STATISTICAL MODELING FOR COMPUTER-AIDED DESIGN OFMOS VLSI CIRCUITS,Christopher Michael,Mohammed IsmailISBN:0-7923-9299-X SELECTIVELINEAR-PHASE SWITCHED-CAPACITOR AND DIGITALFILTERS,HusseinBaher ISBN:0-7923-9298-1 ANALOG CMOS FILTERS FOR VERY HIGH FREQUENCIES,Bram NautaISBN:0-7923-9272-8 ANALOG VLSI NEURAL NETWORKS,Yoshiyasu TakefujiISBN:0-7923-9273-6 ANALOG VLSI IMPLEMENTATION OF NEURAL NETWORKS,Carver A.Mead,Mohammed Ismail ISBN:0-7923-9049-7 AN INTRODUCTION TO ANALOG VLSI DESIGN AUTOMATION,Mohammed Ismail,JoséFrancaISBN:0-7923-9071-7 # CHARACTERIZATION METHODSFOR SUBMICRON MOSFETs edited by Hisham HaddaraAin Shams University KLUWER ACADEMIC PUBLISHERSBoston /Dordrecht /London Distributors for North America: Kluwer Academic Publishers101 Philip DriveAssinippi ParkNorwell,Massachusetts 02061 USA Distributors for all other countries: Kluwer Academic Publishers GroupDistribution CentrePost Office Box 3223300 AH Dordrecht,THE NETHERLANDS Library of Congress Cataloging-in-Publication Data A C.I.P.Catalogue record for this book is availablefrom the Library of Congress. Copyright ◎1995 by Kluwer Academic Publishers All rights reserved.No part of this publication may be reproduced,stored ina retrieval system or transmitted in any form or by any means,mechanical,photo-copying,recording,or otherwise,without the prior written permission ofthe publisher,Kluwer Academic Publishers,101 Philip Drive,Assinippi Park,Norwell,Massachusetts 02061 Printed on acid-free paper. Printed in the United States of America Contents List of Contributors viii 这 Preface 1 Static Measurements and Parameter Extraction 1 1.1 Introduction................ 1.2 Modeling of MOSFET DC Characteristics 1.2.1 Inversion Channel Charge Calculation 1.2.2MOSFET DC Operation Models . 1.3 MOSFET Parameter Extraction Methods 1.3.1Parameter Extraction in the Ohmic Regime 1.3.2Parameter Extraction in Saturation 1.4 Measuring Techniques ..... 1.5 Summary and Conclusion 2 Small Signal Characterization of VLSI MOSFETs 35 2.1 Introduction.............35 2.2 Small Signal AC Model ......37 2.3 Channel Frequency Response of MOSFETs39 2

FAQs

What topics are covered in static measurements for submicron MOSFETs?

The document covers MOSFET DC characteristic modeling, inversion channel charge calculation, and parameter extraction in both the ohmic regime and saturation, plus measuring techniques and a summary conclusion.

How are VLSI MOSFETs characterized in the small-signal section?

It includes a small-signal AC model, channel frequency response, the split-admittance technique (split-current concept and applications), and dynamic transconductance for enhancement and depletion MOSFETs.

What experimental and analysis methods are introduced for charge pumping and DLTS?

Charge pumping topics include early experiments, interface state generation/recombination kinetics, variable amplitude/base modes, saw-tooth excitation, sensitivity, applications in submicron devices, and degraded/low-temperature effects; DLTS topics include generation-recombination statistics, current transient spectroscopy, signal analysis, and MOSFET current DLTS measurement.

Sep 21, 2026

Uploaded by Miles