Agilent ABA-52563 - 3.5 GHz Broadband Silicon RFIC Amplifier - Application Note 1349

Q: What are the key specifications of the ABA-52563 at 2 GHz?

The device provides nominal gain of 21.3 dB and P1dB of 9.7 dBm at 2 GHz, along with low input and output VSWR (<1.2 in, <1.4 out). It also lists NF of 3.6 dB and OIP3 of 20.1 dBm.

Q: How is the ABA-52563 biased for operation?

The amplifier is voltage-biased at 5 V with nominal current around 35 mA. Supply voltage is applied to Vcc and the RF Output pins, with RF bypassing at Vcc and appropriate DC blocking capacitors at input and output.

Q: What PCB layout practices are recommended for the ABA-52563?

Use the SOT-363 pad layout footprint as a reference and provide adequate RF grounding to improve amplifier performance and reduce instability risk. For RF grounding vias, use suitable via placement to reduce inductance, and follow the example microstrip layout guidance shown in the application example.

Oct 12, 2026

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Agilent Technologies ABA-52563 is a low-current silicon gain block RFIC amplifier in a 6-lead SC-70 (SOT-363) surface-mount plastic package. It offers a nominal 21.3 dB gain and 9.7 dBm P1dB at 2 GHz, with high gain, low VSWR, and broad bandwidth up to 3.5 GHz. The note explains two-stage cascade operation, 5 V voltage bias, RF matching to 50 Ω, recommended blocking and bypass components, and PCB layout guidance for stability and performance.

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CategoryHealthcare

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Pages8

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Introduction

Application Guidelines

RF Input and Output

DC Bias

PCB Layout

Application Example

Introduction Agilent Technologies’ ABA-52563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 (SOT-363) surface mount plastic package. Providing a nominal gain of 21.3 dB and P1dB of 9.7 dBm at 2 GHz, this device is ideal for small signal gain stage or IF amplification. Distinguished features of the ABA-52563 which are high gain, good input and output VSWR and Agilent ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1349 GND 1 GND 2 Input | | | | | | --- | --- | --- | --- | | | | | | | | | 2 | | | | | H | | | | | x | | | | | | | | | | | | Output & Vcc GND 3 Vcc broad bandwidth made this device useful in various applications such as Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO and TV Tuner Applications. In addition to the ABA-52563, Agilent Technologies also offers a series of ABA devices with a range of P1dB. The table below is a quick reference on the performance of the series measured at 2 GHz on the board. | Symbol | Unit | ABA-51563 | ABA-52563 | ABA-53563 | | --- | --- | --- | --- | --- | | P1dB | dBm | 1.8 | 9.7 | 12.5 | | OIP3 | dBm | 11.4 | 20.1 | 22.6 | | Icc | mA | 18.4 | 34.9 | 46.3 | | Gp | dB | 21.3 | 21.3 | 21.3 | | NF | dB | 3.6 | 3.6 | 3.6 | | VSWR in | | <1.2 | <1.2 | <1.2 | | VSWR out | | <1.4 | <1.4 | <1.4 | Application Guidelines The ABA-52563 is designed with a two stage cascade consisting in general of a single input transistor driving a Darlington connected output pair. Resistive feedback is used to set the RF performance. The collector of the first stage directly drives the base of the output stage without any interstage blocking capacitor that would limit the low frequency response. The second stages is fed back using both series and shunt resistors, sets the match, gain and flatness of the RFIC. The Agilent’s HP25 silicon bipolar process with a cut off frequency, fT of 25 GHz results in a device with low current draw and useful operation up to 3.5 GHz. The ABA-52563 is very easy to use. For most applications, all that is required to operate the device is to apply a voltage to Pin 4 (Vcc) and Pin 6 (Output and Vcc) . All bias regulation circuitry is integrated into the RFIC. RF Input and Output The RF Input and Output ports of the ABA-52563 are closely matched to 50Ω . DC Bias The ABA-52563 is a voltagebiased device that operates at 5V with nominal current of 35 mA. Figure 1 shows a typical implementation of ABA-52563 . The supply voltage for the ABA-52563 must be applied to two terminals, the Vcc and the RF Output pins. The Vcc connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vcc pin of the amplifier package. The power supply connection to the RF Output pin is achieved by means of a RF choke (inductor) . Thereactance of the RF choke must be relatively higher to 50Ω in order to prevent loading of the RF Output. Blocking capacitors are normally placed in series with the RF input and RF Output to isolate the DC voltages on these pins from circuit adjacent to the amplifier. The values of the blocking capacitors are selected to provide a reactance at the lowest frequency of operation that is relatively smaller to 50Ω . C block RF Output RFC RF Input Vcc C block C bypass Figure 1. Typical Application Circuit. PCB Layout The ABA-52563 is packaged in the miniature SOT-363 (SC-70) surface mount package. A PCB pad layout for the SOT-363 package is shown in Figure 2. This layout provides ample allowance for package placement by automated assembly equipment without adding pad parasitic that could impair the high frequency performance of the ABA-52563 . The layout is shown with a nominal SOT-363 package footprint superimposed on the PCB pads for reference. Figure 2. PCB Pad Layout. Dimensions are in inches (millimeters) . PCB Materials Typical choices for PCB material for low cost wireless applications ar

FAQs

What are the key specifications of the ABA-52563 at 2 GHz?

The device provides nominal gain of 21.3 dB and P1dB of 9.7 dBm at 2 GHz, along with low input and output VSWR (<1.2 in, <1.4 out). It also lists NF of 3.6 dB and OIP3 of 20.1 dBm.

How is the ABA-52563 biased for operation?

The amplifier is voltage-biased at 5 V with nominal current around 35 mA. Supply voltage is applied to Vcc and the RF Output pins, with RF bypassing at Vcc and appropriate DC blocking capacitors at input and output.

What PCB layout practices are recommended for the ABA-52563?

Use the SOT-363 pad layout footprint as a reference and provide adequate RF grounding to improve amplifier performance and reduce instability risk. For RF grounding vias, use suitable via placement to reduce inductance, and follow the example microstrip layout guidance shown in the application example.

Oct 12, 2026

Upload by Grenda