2SD1441 - Silicon NPN Triple-Diffused Junction Mesa Type

Oct 12, 2026

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2SD1441 silicon NPN transistor datasheet details its built-in damper diode, glass passivation for high breakdown voltage, and high-speed switching capability. It lists absolute maximum ratings at Tc=25°C, including collector-base and collector-emitter voltages of 1500V, emitter-base voltage of 5V, collector current up to 4A, peak currents, and collector power dissipation of 70W. Electrical characteristics provide parameters such as IcBO leakage current, hFE gain, saturation voltages, transition frequency, switching fall time, storage time, and forward diode voltage, along with package dimension notes.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages2

Reading Time5 min

AccessFree to download

■ Features

■ Absolute Maximum Ratings (Tc=25°C)

■ Electrical Characteristics (Tc=25°C)

■ Package Dimensions

2SD1441 # Silicon NPN Triple-Diffused Junction Mesa Type Horizontai ueflection Output ## ■ Features ● Damper diode built-in ·High breakdown voltage and high reliability by glass passivation ● High speed switching ●Wide area of safety operation(ASO) ## ■Absolute Maximum Ratings(Tc=25°℃) | Item | | Symbol | Value | Uait | | --- | --- | --- | --- | --- | | Collector-base voltage | | VLBO | 1500 | V | | Collector-emitter voltage | | VcFs | 1500 | V | | Emitter-base voltage | | VEBO | 5 | V | | Collector current | | Ic | 4 | A | | Peak collector current | | Icp* | 15 | A | | Peak base current | | IBP | 3.5 | A | | Reverse peak base current | | IsP | A
-25 | | | Collector power
dissipation | Tc=25℃ | Pe | 70 | W | | | Ta=25℃ | | 2.5 | | | Junction temperature | | T, | 130 | ℃ | | Storage temperature | | T1
-55~+130 | | C | *Non repetitive peak value ## ■ Electrical Characteristics(Tc=25℃) | ltem | Symbol | Condition | min. | typ.
max. | | Unit | | --- | --- | --- | --- | --- | --- | --- | | Collector cutoff current | IcBO | VcB=750V,Ir=0 | | | 50 | μA | | | | VcB=1500V,Ip=0 | | | 1 | mA | | Emitter-base voltage | VEBO | IE=500 mA,Ic=0 | 5 | | | V | | DC current gain | hFE | VcE=10V,Ic=3A | 5 | | 15 | | | Collector-emtter saturation voltage | VcEsa:) | Ic=3A,IB=1A | | | 1 | V | | Base-emitter saturation voltage | VBL(saL) | Ic=3A,Ig=1A | | | 1.5 | V | | Transition frequency | f₁ | VCE=10V,Ic=0.5A,f=0.5MHz | | 2 | | MHz | | Fall tme | t | Ic=3A,IBend=1A
LIruh=5μH | | | 0.75 | μs | | Storage time | tste | | 4 | | 9 | μ5 | | VF
Diode forward voltage | | IC=-4A,IB=0 | | | -2.2 | V | ## ■ Package Dimensions ■ Inner Circuit Ic-VCEVCE(sat)-IcAmbient temperature Ta(℃)Collector-emutter voltage Vu(V)Collector current I(A)Area of safe operation(ASO)Collector current I(A)Collector current I(A)Collecto1-cmitter voltage Ve(V) Callector power disspaton P(W) ollector curtent I(A》 DC current gan h Caliector current I(A) Transtent thermal resislance R,(℃/W)Base-enutter satuiation voltage VHt(V Rth(t)-tTime t(S) 69328520016721379□Panasonic—720—

FAQs

What key features does the 2SD1441 transistor include?

It has a built-in damper diode, high breakdown voltage and reliability via glass passivation, and high-speed switching, with a specified wide safety operation area (ASO).

What are the absolute maximum ratings at Tc=25°C?

The datasheet lists collector-base voltage and collector-emitter voltage up to 1500V, emitter-base voltage 5V, collector current 4A (peak collector current 15A), and collector power dissipation 70W at Tc=25°C.

Which electrical characteristics are provided for switching and gain performance?

It provides DC current gain (hFE), collector-emitter and base-emitter saturation voltages, transition frequency, fall time, storage time, and diode forward voltage (VF).

Oct 12, 2026

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