2N2222 - Semiconductor Technical Data

Nov 1, 2026

Uploaded by Rowan

Semiconductor technical datasheet for an NPN silicon transistor (2N2222A). Provides maximum ratings including collector-emitter voltage, collector-base and emitter-base voltages, continuous collector current, device power dissipation at specified ambient and case temperatures, and allowable junction temperature range. Summarizes thermal characteristics (junction-to-ambient and junction-to-case thermal resistance) plus detailed electrical parameters for OFF, ON, and small-signal behavior, including breakdown voltages, cutoff currents, DC current gain, saturation voltages, capacitances, input impedance, and noise figure. Includes switching characteristics with delay, rise, storage, and fall times.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages6

Reading Time15 min

AccessFree to download

Maximum Ratings

Thermal Characteristics

Electrical Characteristics

OFF Characteristics

ON Characteristics

Small-Signal Characteristics

Switching Characteristics

􀀅􀀇􀀊􀀇􀀉􀀇􀀄􀀃 SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D 􀀃􀀐􀀓􀀏􀀎􀀍􀀎􀀌􀀔 􀀊􀀔􀀋􀀑􀀕􀀎􀀕􀀖􀀒􀀔􀀕 NPN Silicon MAXIMUM RATINGS COLLECTOR 1 3 EMITTER | Rating | Symbol | Value | Unit | | --- | --- | --- | --- | | Collector–Emitter Voltage | V CEO | 40 | Vdc | | Collector–Base Voltage | VCBO | 75 | Vdc | | Emitter–Base Voltage | VEBO | 6.0 | Vdc | | Collector Current—Continuous | IC | 600 | mAdc | | Total Device Dissipation @ TA = 25°CDerate above 25°C | PD | 625
5.0 | mW
mW/°C | | Total Device Dissipation @ TC = 25°CDerate above 25°C | PD | 1.5
12 | Watts
mW/°C | | Operating and Storage Junction Temperature Range | TJ , Tstg | –55 to +150 | °C | THERMAL CHARACTERISTICS | Characteristic | Symbol | Max | Unit | | --- | --- | --- | --- | | Thermal Resistance, Junction to Ambient | R 􀀂JA | 200 | °C/W | | Thermal Resistance, Junction to Case | R 􀀂JC | 83.3 | °C/W | ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 􀀈􀀂􀀆􀀂􀀂􀀂􀀂􀀃 CASE 29–04, STYLE 17 TO–92 (TO–226AA) | Characteristic | Symbol | Min | Max | Unit | | --- | --- | --- | --- | --- | OFF CHARACTERISTICS | Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) | V (BR)CEO | 40 | — | Vdc | | --- | --- | --- | --- | --- | | Collector–Base Breakdown Voltage
(IC = 10 􀀁Adc, IE = 0) | V (BR)CBO | 75 | — | Vdc | | Emitter–Base Breakdown Voltage
(IE = 10 􀀁Adc, IC = 0) | V (BR)EBO | 6.0 | — | Vdc | | Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) | ICEX | — | 10 | nAdc | | Collector Cutoff Current
(V CB = 60 Vdc, IE = 0)
(V CB = 60 Vdc, IE = 0, TA = 150°C) | ICBO | —
— | 0.01
10 | µAdc | | Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) | IEBO | — | 10 | nAdc | | Collector Cutoff Current
(VCE = 10 V) | ICEO | — | 10 | nAdc | | Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) | IBEX | — | 20 | nAdc | 􀁗 Motorola, Inc. 1996 􀀄􀀁􀀃􀀁􀀁􀀁􀀁􀀂 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) | Characteristic | Symbol | Min | Max | Unit | | --- | --- | --- | --- | --- | ON CHARACTERISTICS | DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1) | h FE | 35
50
75
35
100
50
40 | 300
—
— | — | | --- | --- | --- | --- | --- | | Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc) | VCE(sat) | —
— | 0.3
1.0 | Vdc | | Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc) | V BE(sat) | 0.6 | 1.2
2.0 | Vdc | SMALL–SIGNAL CHARACTERISTICS | Current–Gain—Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 300 | — | MHz | | --- | --- | --- | --- | --- | | Output Capacitance
(V CB = 10 Vdc, IE = 0, f = 1.0 MHz) | Cobo | — | 8.0 | pF | | Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | Cibo | — | 25 | pF | | Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hie | 2.0
0.25 | 8.0
1.25 | kΩ | | Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | h re | —
— | 8.0
4.0 | X 10–4 | | Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hfe | 50
75 | 300
375 | — | | Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hoe | 5.0
25 | 35
200 | 􀀁mhos | | Collector Base Time Constant
(IE = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) | rb′Cc | — | 150 | ps | | Noise Figure
(IC = 100 􀀁Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) | NF | — | 4.0 | dB | SWITCHING CHARACTERISTICS | Delay Time | (V CC = 30 Vdc, V BE(off) = –2.0 Vdc,
IC = 150 mA

FAQs

What are the maximum ratings for the 2N2222A transistor?

The datasheet lists maximum collector-emitter voltage, collector-base voltage, emitter-base voltage, continuous collector current, power dissipation versus temperature, and a junction temperature range of -55 to +150 °C.

What ON and OFF electrical characteristics are provided?

OFF characteristics include breakdown voltages and cutoff currents, while ON characteristics include DC current gain (hFE) and saturation voltages (VCE(sat) and VBE(sat)) for specified test currents.

Which switching parameters are listed for turn-on and turn-off performance?

Switching characteristics include delay time (td), rise time (tr), storage time (ts), and fall time (tf), along with figure references and pulse-test conditions.

Nov 1, 2026

Uploaded by Rowan