2N2222 - NPN switching transistor - data sheet

Nov 1, 2026

2N2222 / 2N2222A are NPN switching transistors in a TO-18 metal package, with applications in linear amplification and switching. The sheet lists electrical features such as high collector current up to 800 mA and low voltage ratings up to 40 V, plus DC current gain, transition frequency, and turn-off time. It provides pinning (emitter, base, collector) and detailed ratings including limiting values, thermal characteristics, and noise figure. Switching times and a test circuit for timing measurements are included.

LanguageEnglish

CategoryTechnology

FormatPDF

Pages8

Reading Time20 min

AccessFree to download

Features

Applications

Description

Pinning

Quick reference data

Limiting values

Thermal characteristics

Characteristics

Switching times

Package outline

DISCRETE SEMICONDUCTORS DATA SHEET 2N2222; 2N2222A NPN switching transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V) . APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. PINNING | PIN | DESCRIPTION | | --- | --- | | 1 | emitter | | 2 | base | | 3 | collector, connected to case | |

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1 | | --- | --- | --- | | Fig.1 Simplified outline (TO-18) and symbol. | | | QUICK REFERENCE DATA | SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | | --- | --- | --- | --- | --- | --- | | VCBO | collector-base voltage 2N2222
2N2222A | open emitter | −
− | 60
75 | V
V | | V CEO | collector-emitter voltage 2N2222
2N2222A | open base | −
− | 30
40 | V
V | | IC | collector current (DC) | | − | 800 | mA | | Ptot | total power dissipation | Tamb ≤ 25 °C | − | 500 | mW | | h FE | DC current gain | IC = 10 mA; VCE = 10 V | 75 | − | | | fT | transition frequency 2N2222
2N2222A | IC = 20 mA; VCE = 20 V; f = 100 MHz | 250
300 | −
− | MHz
MHz | | t off | turn-off time | ICon = 150 mA; I Bon = 15 mA; IBoff = −15 mA | − | 250 | ns | 1997 May 29 2 NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) . | SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | | --- | --- | --- | --- | --- | --- | | VCBO | collector-base voltage
2N2222
2N2222A | open emitter | −
− | 60
75 | V
V | | V CEO | collector-emitter voltage
2N2222
2N2222A | open base | −
− | 30
40 | V
V | | VEBO | emitter-base voltage
2N2222
2N2222A | open collector | −
− | 5 6 | V
V | | IC | collector current (DC) | | − | 800 | mA | | I CM | peak collector current | | − | 800 | mA | | IBM | peak base current | | − | 200 | mA | | Ptot | total power dissipation | Tamb ≤ 25 °C | − | 500 | mW | | | | Tcase ≤ 25 °C | − | 1.2 | W | | Tstg | storage temperature | | −65 | +150 | °C | | Tj | junction temperature | | − | 200 | °C | | Tamb | operating ambient temperature | | −65 | +150 | °C | THERMAL CHARACTERISTICS | SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT | | --- | --- | --- | --- | --- | | Rth j-a | thermal resistance from junction to ambient | in free air | 350 | K/W | | Rth j-c | thermal resistance from junction to case | | 146 | K/W | 1997 May 29 3 NPN switching transistors 2N2222; 2N2222A CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed. | SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | | --- | --- | --- | --- | --- | --- | | ICBO | collector cut-off current 2N2222 | IE = 0; V CB = 50 V | − | 10 | nA | | | | IE = 0; V CB = 50 V; Tamb = 150 °C | − | 10 | µA | | ICBO | collector cut-off current 2N2222A | IE = 0; V CB = 60 V | − | 10 | nA | | | | IE = 0; V CB = 60 V; Tamb = 150 °C | − | 10 | µA | | IEBO | emitter cut-off current | IC = 0; VEB = 3 V | − | 10 | nA | | h FE | DC current gain | IC = 0 . 1 mA; VCE = 10 V | 35 | − | | | | | IC = 1 mA; VCE = 10 V | 50 | − | | | | | IC = 10 mA; VCE = 10 V | 75 | − | | | | | IC = 150 mA; VCE = 1 V; note 1 | 50 | − | | | | | IC = 150 mA; VCE = 10 V; note 1 | 100 | 300 | | | h FE | DC current gain
2N2222A | IC = 10 mA; VCE = 10 V; Tamb = −55 °C | 35 | − | | | h FE | DC current gain
2N2222
2N2222A | IC = 500 mA; VCE = 10 V; note 1 | 30
40 | −
− | | | VCEsat | collector-emitter saturation voltage 2N2222 | IC = 150 mA; IB = 15 mA; note 1 | − | 400 | mV | | | | IC = 500 mA; IB = 50 mA; note 1 | − | 1.6 | V | | VCEsat | collector-emitter saturation voltage 2N2222A | IC = 150 mA; IB = 15 mA; note 1 | − | 300 | mV | | | | IC = 500 mA; IB = 50 mA; note 1 | − | 1 | V | | VBEsat | base-emitter saturation voltag

FAQs

What package and type are 2N2222 / 2N2222A?

They are NPN switching transistors provided in a TO-18 metal package. The document also notes the PNP complement 2N2907A.

What are the key electrical limits for these transistors?

The quick reference and limiting tables specify maximum collector current (up to 800 mA), voltage ratings (VCBO up to 60/75 V and VCEO up to 30/40 V depending on device), and total power dissipation (up to 500 mW, with additional case rating).

How are switching times specified and tested?

The sheet lists ton, td, tr, t off, ts, and tf (between 10% and 90% levels) and provides note 1 and Fig.2 describing the pulse test and the test circuit used for switching-time measurements.

Nov 1, 2026

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