[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-183640-113":3,"detail-sidebar-cat-0-id-113":81,"doc-detail-183640-id":128},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":74,"head_meta":76,"extra_data":78,"updated_unix":80},113,"id","jurnal-komputika-bipolar-ayub-oke","Jurnal Komputika Bipolar Ayub Oke","","Dokumen ini menyajikan informasi teknis yang mendalam berkaitan dengan spesifikasi substrat epitaksi untuk aplikasi elektronik, termasuk parameter seperti orientasi kristalografi, diameter wafer, tipe doping (P dan N), ketebalan film, dan resistivitas yang bervariasi. Rincian ini sangat krusial dalam manufaktur semikonduktor, di mana konsistensi dan presisi material menentukan kinerja perangkat. Selain itu, dokumen ini menguraikan tahapan proses pembersihan dan etsa menggunakan berbagai bahan kimia seperti larutan asam sulfat, hidrogen peroksida, amonium hidroksida, dan asam fluorida, dengan durasi yang spesifik untuk setiap langkah. Penggunaan air deionisasi (DI) sebagai pembilas antar tahapan menekankan pentingnya lingkungan yang terkontrol bebas dari kontaminan. Tabel yang disajikan memberikan gambaran terstruktur mengenai parameter material dan alur proses, yang sangat relevan bagi para insinyur dan peneliti di bidang teknologi material dan fabrikasi perangkat elektronik, khususnya yang berfokus pada pengembangan komponen semikonduktor dengan karakteristik yang presisi dan andal. Informasi ini mendukung pemahaman tentang proses kompleks di balik produksi material semikonduktor berkualitas tinggi.",{"@graph":14,"@context":73},[15,34,56],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/id/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/id/document/teknologi/","Teknologi",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/id/document/jurnal-komputika-bipolar-ayub-oke/183640/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/jurnal-komputika-bipolar-ayub-oke/183640.png","ImageObject",300,407,{"name":42,"@type":43},"River Wang","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-10-04","2026-09-02",true,{"@type":52,"interactionType":53,"userInteractionCount":55},"InteractionCounter",{"@type":54},"ViewAction",10,{"@type":57,"mainEntity":58},"FAQPage",[59,65,69],{"name":60,"@type":61,"acceptedAnswer":62},"Apa saja parameter spesifikasi substrat epitaksi yang disebutkan dalam dokumen?","Question",{"text":63,"@type":64},"Dokumen ini mencantumkan parameter seperti orientasi kristalografi (\u003C100>), diameter 2 inci, tipe P (Boron) dan N (Fosfor), ketebalan 3 μm, serta resistivitas 1-30 Ω.cm untuk Boron dan 4-8 Ω.cm untuk Fosfor.","Answer",{"name":66,"@type":61,"acceptedAnswer":67},"Bahan kimia apa saja yang digunakan dalam tahap pembersihan dan etsa?",{"text":68,"@type":64},"Tahapan pembersihan dan etsa melibatkan penggunaan H2SO4:H2O2, NH4OH:H2O2:H2O, HCl:H2O2:H2O, HF:H2O, serta air deionisasi (DI) untuk pembilasan.",{"name":70,"@type":61,"acceptedAnswer":71},"Berapa lama durasi untuk setiap tahap pembersihan dan etsa?",{"text":72,"@type":64},"Durasi bervariasi untuk setiap tahap, mulai dari 15 menit untuk beberapa larutan kimia hingga 30 detik untuk larutan HF:H2O, dengan pembilasan air DI selama 1 menit.","https://schema.org",{"og:url":32,"og:type":75,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":77,"canonical":32},"index,follow",{"doc_id":79,"site_id":7},183640,1788353494,{"code":4,"msg":82,"data":83},"success",[84,89,93,97,101,105,109,113,116,120,124],{"id":85,"doc_module":4,"doc_module_name":25,"category_name":86,"show_sort_weight":87,"slug":88},55,"Agama & Spiritualitas",60,"religion-spirituality",{"id":90,"doc_module":4,"doc_module_name":25,"category_name":91,"show_sort_weight":87,"slug":92},48,"Cerita & Novel","story-novel",{"id":94,"doc_module":4,"doc_module_name":25,"category_name":95,"show_sort_weight":87,"slug":96},56,"Gaya 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 | \u003Cbr>w'En = NE |  |  | w'Bn = NB |  |  | \u003Cbr>w'Cn = NC |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- |\n\n| Parameter | Spesifikasi |  |\n| --- | --- | --- |\n|  | Substrat | Epitaksi |\n| Orientasi | \u003C100> |  |\n| Diameter | 2 inci |  |\n| Tipe | P | N |\n| Doping | Boron | Fosfor |\n| Tebal | 250 μm | 3 μm |\n| Reistivitas | 1-30 Ω . cm | 4-8 Ω . cm |\n\n| Tahap | Bahan kimia | Lama |\n| --- | --- | --- |\n| 1 | H2SO4 : H2O2 (2:1) | 15 menit |\n| 2 | De-Ionized (DI) water | 1 menit (5 kali) |\n| 3 | NH4OH : H2O2 : H2O | 15 menit |\n| 4 | (1 : 1 : 5)\u003Cbr>De-Ionized (DI) water | 1 menit (5 kali) |\n| 5 | HCl : H2O2 : H2O (1 : 1 : 5) | 15 menit |\n| 6 | HF : H2O ( 1 : 5 ) | 30 detik |\n| 7 | De-Ionized (DI) water | 1 menit (5 kali) |","cbCaidXnmFJCK0le","https://ap.wps.com/l/cbCaidXnmFJCK0le","pdf",816997,7,"Indonesian","# Parameter Substrat\n## Spesifikasi\n# Tahap Pembersihan dan Etsa","[{\"question\":\"Apa saja parameter spesifikasi substrat epitaksi yang disebutkan dalam dokumen?\",\"answer\":\"Dokumen ini mencantumkan parameter seperti orientasi kristalografi (\\u003c100\\u003e), diameter 2 inci, tipe P (Boron) dan N (Fosfor), ketebalan 3 μm, serta resistivitas 1-30 Ω.cm untuk Boron dan 4-8 Ω.cm untuk Fosfor.\"},{\"question\":\"Bahan kimia apa saja yang digunakan dalam tahap pembersihan dan etsa?\",\"answer\":\"Tahapan pembersihan dan etsa melibatkan penggunaan H2SO4:H2O2, NH4OH:H2O2:H2O, HCl:H2O2:H2O, HF:H2O, serta air deionisasi (DI) untuk pembilasan.\"},{\"question\":\"Berapa lama durasi untuk setiap tahap pembersihan dan etsa?\",\"answer\":\"Durasi bervariasi untuk setiap tahap, mulai dari 15 menit untuk beberapa larutan kimia hingga 30 detik untuk larutan HF:H2O, dengan pembilasan air DI selama 1 menit.\"}]","Jurnal Komputika Bipolar Ayub Oke | PDF",11]