[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-560880-105":59,"doc-detail-560880-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","toshiba-transistor-silicon-npn-triple-diffused-mesa-type-horizontal-deflection-output-for-high-resolution-display-high-speed-switching-applications","TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE - Horizontal Deflection Output for High Resolution Display - High Speed Switching Applications","","TOSHIBA 2SC5144 silicon NPN transistor datasheet focuses on horizontal deflection output for high resolution display color TV. It lists high-speed switching characteristics including typical fall time and storage time, plus key limits such as collector-base and collector-emitter voltages, maximum collector current, base current, power dissipation, and junction/storage temperatures. Electrical characteristics cover cutoff currents, breakdown voltage, DC current gain ranges, saturation voltages, transition frequency, output capacitance, and a switching-time test circuit reference.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/toshiba-transistor-silicon-npn-triple-diffused-mesa-type-horizontal-deflection-output-for-high-resolution-display-high-speed-switching-applications/560880/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/toshiba-transistor-silicon-npn-triple-diffused-mesa-type-horizontal-deflection-output-for-high-resolution-display-high-speed-switching-applications/560880.png","ImageObject",300,407,{"name":92,"@type":93},"Đào","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-20","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":19},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the maximum ratings for the 2SC5144 transistor at Ta=25℃?","Question",{"text":112,"@type":113},"The document specifies maximum collector-base voltage VCBO=1700V, collector-emitter voltage VCEO=600V, emitter-base voltage VEBO=5V, collector current Ic=20A (DC) and ICP=40 (pulse), base current IB=10A, power dissipation Pc=200W at Tc=25℃, and temperature limits Tj=150℃ and Tstg=-55~150℃.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What electrical characteristics are provided under electrical characteristics at Ta=25℃?",{"text":117,"@type":113},"It includes collector cutoff current ICBO up to 1mA and emitter cutoff current IEBO up to 10μA, collector-emitter breakdown voltage V(BR)CEO with Ic=10mA and IB=0 equal to 600V, DC current gain hFE(1)=10 to 30 and hFE(2)=4.5 to 8.5, plus saturation voltages VCE(sat) max 3V and VBE(sat) 1.0 to 1.3V.",{"name":119,"@type":110,"acceptedAnswer":120},"Which high-speed switching parameters are highlighted for switching performance?",{"text":121,"@type":113},"High speed switching sections list typical switching time values such as storage time tstg typ 2.5μs max 4.0μs and fall time tf typ 0.15μs max 0.3μs. A figure reference (Fig.1) and the switching time test circuit are also included.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},560880,1792057366,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":19,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":24,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},1374402968488,"https://ap-avatar.wpscdn.com/davatar_29158cc5080c5b710cf443261637dec0","# TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE\n\n2SC5144  \n# HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTIONDISPLAY,COLOR TV\n\n## HIGH SPEED SWITCHING APPLICATIONS\n\n● High Speed  \n:tf=0.15μs(Typ.)  \n● High Voltage  \n:VCBO=1700V  \n·  Low Saturation Voltage:VCE(sat)=3V(Max.)  \n## MAXIMUM RATINGS(Ta =25℃)\n\n\n| CHARACTERISTIC   |  | SYMBOL   | RATING   | UNIT   |\n| --- | --- | --- | --- | --- |\n| Collector-Base Voltage   |  | VCBO   | 1700   | V   |\n| Collector-Emitter Voltage   |  | VCEO   | 600   | V   |\n| Emitter-Base Voltage   |  | VEBO   | 5   | V   |\n| Collector Current   | DC   | Ic   | 20   | A   |\n|  | Pulse   | ICP   | 40   |  |\n| Base Current   |  | IB   | 10   | A   |\n| Collector Power Dissipation  \u003Cbr>(Tc=25℃)   |  | Pc   | 200   | W   |\n| Junction Temperature   |  | Tj   | 150   | ℃   |\n| Storage Temperature Range   |  | Tstg   | -55~150   | ℃   |\n\n## ELECTRICAL CHARACTERISTICS(Ta =25℃)\n\n\n| CHARACTERISTIC   |  | SYMBOL   | TEST CONDITION   | MIN.   | TYP.   | MAX.   | UNIT   |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n| Collector Cut-off Current   |  | ICBO   | VCB=1700V,IE=0   | 一   | 一   | 1   | mA   |\n| Emitter Cut-off Current   |  | IEBO   | VEB=5V,Ic=0   | 一   | 一   | 10   | μA   |\n| Collector-Emitter Breakdown  \u003Cbr>Voltage   |  | V(BR)CEO   | Ic=10mA,IB=0   | 600   | 一   | 一   | V   |\n| DC Current Gain   |  | hFE(1)   | VCE=5V,Ic=2A   | 10   | 一   | 30   | 一   |\n|  |  | hFE(2)   | VCE =5V,Ic=11A   | 4.5   | 一   | 8.5   |  |\n| Collector-Emitter Saturation  \u003Cbr>Voltage   |  | VCE(sat)   | Ic=11A,IB=2.75A   | 一   | 一   | 3   | V   |\n| Base-Emitter Saturation  \u003Cbr>Voltage   |  | VBE(sat)   | Ic=11A,IB=2.75 A   | 一   | 1.0   | 1.3   | V   |\n| Transition Frequency   |  | fT   | VCE =10V,IE =0.1A   | 一   | 1.7   | 一   | MHz   |\n| Collector Output Capacitance   |  | Cob   | VCB=10V,IE =0,f=1MHz   | 一   | 290   | 一   | pF   |\n| Switching  \u003Cbr>Time (Fig.1)   | Storage Time   | tstg   | ICP=10A,IB1(end)=1.8A  \u003Cbr>fH=64kHz   | 一   | 2.5   | 4.0   | μs   |\n|  | Fall Time   | tf   |  | 一   | 0.15   | 0.3   |  |\n\n\n| TOSHIBA is continually working to improve the quality and the reliability of its products.Nevertheless,semiconductor devices in general can  \u003Cbr>malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.It is the responsibility of the buyer,when utilizing  \u003Cbr>TOSHIBA products,to observe standards of safety,and to avoid situations in wich a malfunction or failure of a TOSHIBA product could cause loss  \u003Cbr>of human life,bodily injury or damage to property.n developing your designs,pleas ensure that TOSHIBA products are used within specified  \u003Cbr>operating ranges as set forth in the most recent products specifications.Also,please keep in mind the precautions and conditions set forth in the  \u003Cbr>TOSHIBA Semiconductor Reliability Handbook.  \u003Cbr>● The information contained herein is presented only as a guide for the applications of our products.No responsibility is assumed by TOSHIBA  \u003Cbr>CORPORATION for any infringements of intellectual property or other rghts of the third parties which may result from its use.No license is granted  \u003Cbr>by implication or othérwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.  \u003Cbr>● The information contained herein is subject to change without notice.   |\n| --- |\n\nUnit in mm  \n\n| Ø3.3±0.2  \u003Cbr>20.5MAX.  \u003Cbr>品  \u003Cbr>26.0±0.5  \u003Cbr>1.5  \u003Cbr>只  \u003Cbr>2.50  \u003Cbr>2.5  \u003Cbr>20.0±0.6  \u003Cbr>10=8:25  \u003Cbr>5.45±0.15  \u003Cbr>5.45±0.15  \u003Cbr>5.2MAX.  \u003Cbr>123  \u003Cbr>1.BASE  \u003Cbr>2.COLLECTOR(HEAT SINK)  \u003Cbr>3.EMITTER   |\n| --- |\n| JEDEC  \u003Cbr>一   |\n| EIAJ  \u003Cbr>一   |\n| 2-21F2A  \u003Cbr>TOSHIBA   |\n\nWeight:9.75g(Typ.)  \n961001EAA2  \nFig.1 SWITCHING TIME TEST CIRCUIT  \nBASE CURRENT  \nBase Current Gradient  \n(A/μs)  \n(Note):Leakage Inductance of secondary winding LB is 1.2μH.  \nCOLLECTOR CURRENT IC(A)  \nCOLLECTOR-EMITTER VOLTAGE VCE(V)COLLECTOR CURRENT Ic(A)Ic-VBE  \nDC CURRENT GAIN hFE  \nOLLECTOR CURRENT Ic(A)  \n0.20.40.60.81","cbCaivYgh43D6NCb","https://ap.wps.com/l/cbCaivYgh43D6NCb","pdf",216486,"English","# HIGH SPEED SWITCHING APPLICATIONS\n## MAXIMUM RATINGS (Ta =25℃)\n## ELECTRICAL CHARACTERISTICS (Ta =25℃)","[{\"question\":\"What are the maximum ratings for the 2SC5144 transistor at Ta=25℃?\",\"answer\":\"The document specifies maximum collector-base voltage VCBO=1700V, collector-emitter voltage VCEO=600V, emitter-base voltage VEBO=5V, collector current Ic=20A (DC) and ICP=40 (pulse), base current IB=10A, power dissipation Pc=200W at Tc=25℃, and temperature limits Tj=150℃ and Tstg=-55~150℃.\"},{\"question\":\"What electrical characteristics are provided under electrical characteristics at Ta=25℃?\",\"answer\":\"It includes collector cutoff current ICBO up to 1mA and emitter cutoff current IEBO up to 10μA, collector-emitter breakdown voltage V(BR)CEO with Ic=10mA and IB=0 equal to 600V, DC current gain hFE(1)=10 to 30 and hFE(2)=4.5 to 8.5, plus saturation voltages VCE(sat) max 3V and VBE(sat) 1.0 to 1.3V.\"},{\"question\":\"Which high-speed switching parameters are highlighted for switching performance?\",\"answer\":\"High speed switching sections list typical switching time values such as storage time tstg typ 2.5μs max 4.0μs and fall time tf typ 0.15μs max 0.3μs. A figure reference (Fig.1) and the switching time test circuit are also included.\"}]","TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE - Horizontal Deflection Output for High Resolution Display - High Speed Switching Applications | PDF",1791804386,13]