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Electrical characteristics include cutoff currents, saturation voltages, base-emitter voltage, and DC current gain with test conditions, plus TO-92 mechanical dimensions and usage 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type of transistor is STX112 and what package is it in?","Question",{"text":63,"@type":64},"STX112 is a silicon epitaxial-base NPN transistor in a monolithic Darlington configuration, mounted in a TO-92 plastic package.","Answer",{"name":66,"@type":61,"acceptedAnswer":67},"What are the absolute maximum ratings for STX112?",{"text":68,"@type":64},"The document lists absolute maximum ratings including VCBO and VCEO of 100 V, VEBO of 5 V, collector current IC of 2 A, and total power dissipation Ptot of 1.2 W at Ta=25°C.",{"name":70,"@type":61,"acceptedAnswer":71},"Which parameters are provided under the electrical characteristics section?",{"text":72,"@type":64},"It includes collector cut-off current (ICEO), collector cut-off current (ICBO), emitter cut-off current (IEBO), collector-emitter sustaining voltage, collector-emitter saturation voltage, base-emitter voltage, and DC current gain hFE with specified test conditions.","https://schema.org",{"og:url":32,"og:type":75,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":77,"canonical":32},"index,follow",{"doc_id":79,"site_id":7},560675,1791821640,{"code":4,"msg":82,"data":83},"success",[84,88,92,96,101,105,110,115,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":85,"show_sort_weight":86,"slug":87},"Story & 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\nCONFIGURATION  \nINTEGRATED ANTIPARALLEL  \n■  \nCOLLECTOR-EMITTER DIODE  \nAPPLICATIONS  \nLINEAR AND SWITCHING INDUSTRIAL  \n■  \nEQUIPMENT  \nDESCRIPTION  \nThe device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications.  \nOrdering codes:  \nSTX112 (shipment in bulk)  \nSTX112-AP (shipment in ammopack)  \nINTERNAL SCHEMATIC DIAGRAM  \nR 1 Typ. = 7K Ω R2 Typ . = 230  \nABSOLUTE MAXIMUM RATINGS  \n\n| Symbol | Parameter | Value | Unit |\n| --- | --- | --- | --- |\n| VCBO | Collector-Base Voltage (IE = 0) | 100 | V |\n| V CEO | Collector-Emitter Voltage (IB = 0) | 100 | V |\n| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |\n| IC | Collector Current | 2 | A |\n| I CM | Collector Peak Current | 4 | A |\n| IB | Base Current | 50 | mA |\n| Ptot | Total Dissipation at Ta mb = 25 oC | 1.2 | W |\n| Tstg | Storage Temperature | -65 to 150 | oC |\n| Tj | Max . Operating Junction Temperature | 150 | oC |\n\nOctober 2000 1/5  \nTHERMAL DATA  \n\n| Rthj-amb | Thermal Resistance Junction-ambient Max | 104 | oC/W |\n| --- | --- | --- | --- |\n\nELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  \n\n| Symbol | Parameter | Test Conditions | Min. | Typ. | Max . | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n| ICEO | Collector Cut-off Current (IB = 0) | VCE = 50 V |  |  | 2 | mA |\n| ICBO | Collector Cut-off Current (IE = 0) | V CB = 100 V |  |  | 1 | mA |\n| IEBO | Emitter Cut-off Current (IC = 0) | VEB = 5 V |  |  | 2 | mA |\n| V CEO(sus) ∗ | Collector-Emitter Sustaining Voltage (IB = 0) | IC = 30 mA | 100 |  |  | V |\n| VCE(sat) ∗ | Collector-Emitter Saturation Voltage | IC = 2 A IB = 8 mA |  |  | 2.5 | V |\n| V BE ∗ | Base-Emitter Voltage | IC = 2 A VCE = 4 V |  |  | 2.8 | V |\n| h FE ∗ | DC Current Gain | IC = 1 A VCE = 4 V\u003Cbr>IC = 2 A VCE = 4 V | 1000\u003Cbr>500 |  |  |  |\n\n∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  \nSafe Operating Area Derating Curve  \n2/5  \nDC Current Gain  \nBase-Emitter Saturation Voltage  \nFreewheel Diode Forward Voltage  \nCollector-Emitter Saturation Voltage  \nBase-Emitter On Voltage  \n3/5  \nTO-92 MECHANICAL DATA  \n\n| DIM. | mm |  |  | inch |  |  |\n| --- | --- | --- | --- | --- | --- | --- |\n|  | MIN. | TYP. | MAX. | MIN. | TYP. | MAX. |\n| A | 4.58 |  | 5.33 | 0.180 |  | 0.210 |\n| B | 4.45 |  | 5.2 | 0.175 |  | 0.204 |\n| C | 3.2 |  | 4.2 | 0.126 |  | 0.165 |\n| D | 12.7 |  |  | 0.500 |  |  |\n| E |  | 1.27 |  |  | 0.050 |  |\n| F | 0.4 |  | 0.51 | 0.016 |  | 0.020 |\n| G | 0.35 |  |  | 0.14 |  |  |\n\n4/5  \nInformation furnished is believed to be accurate and reliable . However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use . No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  \nThe ST logo is a trademark of STMicroelectronics  \n© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved  \nSTMicroelectronics GROUP OF COMPANIES  \nAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India- Italy-Japan-Malaysia-Malta-Morocco  \nSingapore-Spain-Sweden-Switzerland-United Kingdom-U.S.A.  \n[http://www.st.com](http://www.st.com)  \n5/5  \nThis datasheet has been download from:  \n[www.datasheetcatalog.com](www.datasheetcatalog.com)  \nDatasheets for electronics components.","cbCaitH5NFho8Lno","https://ap.wps.com/l/cbCaitH5NFho8Lno","pdf",161036,"English","# Product Overview\n## Configuration and Applications\n## Ordering Information\n# Ratings and Characteristics\n## Absolute Maximum Ratings\n## Thermal Data\n## Electrical Characteristics\n# Mechanical Data\n## TO-92 Dimensions\n# Legal Notice","[{\"question\":\"What type of transistor is STX112 and what package is it in?\",\"answer\":\"STX112 is a silicon epitaxial-base NPN transistor in a monolithic Darlington configuration, mounted in a TO-92 plastic package.\"},{\"question\":\"What are the absolute maximum ratings for STX112?\",\"answer\":\"The document lists absolute maximum ratings including VCBO and VCEO of 100 V, VEBO of 5 V, collector current IC of 2 A, and total power dissipation Ptot of 1.2 W at Ta=25°C.\"},{\"question\":\"Which parameters are provided under the electrical characteristics section?\",\"answer\":\"It includes collector cut-off current (ICEO), collector cut-off current (ICBO), emitter cut-off current (IEBO), collector-emitter sustaining voltage, collector-emitter saturation voltage, base-emitter voltage, and DC current gain hFE with specified test conditions.\"}]","STX112 - Silicon NPN Power Darlington Transistor - Datasheet | PDF",1791803862,15]