[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562990-105":59,"doc-detail-562990-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","st13003-high-voltage-fast-switching-npn-power-transistor-datasheet-production-data","ST13003 - High voltage fast-switching NPN power transistor Datasheet - Production data","","ST13003 and ST13003-K are high-voltage fast-switching NPN power transistors designed for efficient operation in demanding electronic switching applications. The datasheet production data covers device features such as high voltage capability, low spread of dynamic parameters, and very high switching speed. Electrical ratings include absolute maximum limits and thermal data, followed by electrical characteristics with test conditions, min/typ/max values, and switching-time specifications. Package mechanical data and revision history are also provided.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/st13003-high-voltage-fast-switching-npn-power-transistor-datasheet-production-data/562990/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/st13003-high-voltage-fast-switching-npn-power-transistor-datasheet-production-data/562990.png","ImageObject",300,407,{"name":92,"@type":93},"pixelkiddo","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":81},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the key features of the ST13003/ST13003-K transistor?","Question",{"text":112,"@type":113},"The datasheet lists high voltage capability, low spread of dynamic parameters, and very high switching speed.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What absolute maximum collector-emitter voltage values are provided?",{"text":117,"@type":113},"It specifies VCES = 700 V and VCEO = 400 V under the stated conditions.",{"name":119,"@type":110,"acceptedAnswer":120},"What applications are recommended for this device?",{"text":121,"@type":113},"Applications include electronic ballast for fluorescent lighting (CFL) and SMPS for battery chargers.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},562990,1791872259,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":81,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":52,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},962090883892,"https://ap-avatar.wpscdn.com/avatar/e00115db34f3e0f11b?x-image-process=image/resize,m_fixed,w_180,h_180&k=1790152879550218658","| | ST13003,\u003Cbr>ST13003-K |\n| --- | --- |\n| High voltage fast-switching NPN power transistor |  |\n\n1  \n32  \nSOT-32  \nFigure 1. Internal schematic diagram  \n\n| C(2) |\n| --- |\n| B(3) ~~ ~~\u003Cbr>SC06960r\u003Cbr>|\n\nDatasheet-production data  \nFeatures  \n• High voltage capability  \n• Low spread of dynamic parameters  \n• Very high switching speed  \nApplications  \n• Electronic ballast for fluorescent lighting (CFL)  \n• SMPS for battery charger  \nDescription  \nThe device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.  \nIt uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.  \nTable 1. Device summary  \n\n| Part number | Marking | Package | Packaging |\n| --- | --- | --- | --- |\n| ST13003 | 13003 | SOT-32 | Tube |\n| ST13003-K | 13003 | SOT-32 | Bag |\n\nJune 2013 DocID13533 Rev 5 1/10  \nThis is information on a product in full [production.](production. www.st.com)[ www.st.com](production. www.st.com)  \n1 Electrical ratings  \nTable 2. Absolute maximum ratings  \n\n| Symbol | Parameter | Value | Unit |\n| --- | --- | --- | --- |\n| VCES | Collector-emitter voltage (VBE = 0) | 700 | V |\n| V CEO | Collector-emitter voltage (IB = 0) | 400 | V |\n| VEBO | Emitter-base voltage (IC = 0, IB = 0.75 A, tP \u003C 10 μs) | V(BR)EBO | V |\n| IC | Collector current | 1.5 | A |\n| ICM | Collector peak current (tP \u003C 5 ms) | 3 | A |\n| IB | Base current | 0.75 | A |\n| IBM | Base peak current (tP \u003C 5 ms) | 1.5 | A |\n| PTOT | Total dissipation at TC = 25 °C | 40 | W |\n| TSTG | Storage temperature | -55 to 150 | °C |\n| TJ | Operating junction temperature | -40 to 150 | °C |\n\nTable 3. Thermal data  \n\n| Symbol | Parameter | Value | Unit |\n| --- | --- | --- | --- |\n| RthJC | Thermal resistance junction-case max. | 3.1 | °C/W |\n\n2/10  \nDocID13533 Rev 5  \n2 Electrical characteristics  \nTcase = 25 °C unless otherwise specified.  \nTable 4. Electrical characteristics  \n\n| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n| ICES | Collector cut-off current (VBE = 0) | VCE = 700 V\u003Cbr>VCE = 700 V TC = 125 °C |  |  | 1 5 | mA\u003Cbr>mA |\n| V(BR)EBO | Emitter-Base breakdown voltage (IC = 0) | IE = 10 mA | 9 |  | 18 | V |\n| VCEO(sus) (1) | Collector-emitter\u003Cbr>sustaining voltage (IB = 0) | IC = 10 mA | 400 |  |  | V |\n| VCE(sat) (1) | Collector-emitter saturation voltage | IC = 0.5 A IB = 0.1 A\u003Cbr>IC = 1 A IB = 0.25 A\u003Cbr>IC = 1.5 A IB = 0.5 A |  |  | 0.5\u003Cbr>1\u003Cbr>1.5 | V\u003Cbr>V\u003Cbr>V |\n| VBE(sat) (1) | Base-emitter saturation voltage | IC = 0.5 A IB = 0.1 A\u003Cbr>IC = 1 A IB = 0.25 A |  |  | 1\u003Cbr>1.2 | V\u003Cbr>V |\n| hFE | DC current gain | IC = 0.5 A V CE = 2 V\u003Cbr>IC = 1 A V CE = 2 V | 8 5 |  | 20\u003Cbr>25 |  |\n| tr\u003Cbr>ts\u003Cbr>t f | Resistive load Rise time Storage time Fall time | V CC = 125 V IC = 1 AIB1 = 0.2 A IB2 = -0.2 Atp = 25 μs |  |  | 1 4\u003Cbr>0.7 | μs\u003Cbr>μs\u003Cbr>μs |\n| ts | Inductive load\u003Cbr>Storage time | IC = 1 A IB1 = 0.2 A\u003Cbr>V BE = -5 V L = 50 mH VClamp = 300 V |  | 0.8 |  | μs |\n\n1. Pulsed duration = 300 μs, duty cycle ≤ 1.5%  \nDocID13533 Rev 5 3/10  \n2.1 Electrical characteristics (curves)  \nFigure 2. Safe operating areas Figure 3. Derating curve  \nFigure 4. Output characteristics Figure 5. Reverse biased safe operating  \nareas  \nFigure 6. DC current gain (VCE = 1 V) Figure 7. DC current gain (VCE = 5 V)  \n4/10  \nDocID13533 Rev 5  \nFigure 8. Collector-emitter saturation voltage  \nFigure 9. Base-emitter saturation voltage  \nFigure 10. Inductive load switching time Figure 11. Resistive load switching time  \nDocID13533 Rev 5 5/10  \n2.2 Test circuits  \nFigure 12. Resistive load switching test circuit  \n1. Fast electronic switch  \n2. Non-inductive resistor  \nFigure 13. Inductive load switching test circuit  \n\n| \u003Cbr>\u003Cbr>| \u003Cbr>|\n| --- | --- |\n\n1. Fast electronic switch  \n2. Non-inductive resistor  \n3. Fast recovery rectifier  \n6/10  \nDocID13533 Rev 5  \n3 Package mechanical data  \nIn order to meet en","cbCaig0yIhuj6Gxh","https://ap.wps.com/l/cbCaig0yIhuj6Gxh","pdf",247405,"English","# Features\n# Applications\n# Description\n# Electrical ratings\n## Absolute maximum ratings\n## Thermal data\n# Electrical characteristics\n## Electrical characteristics\n## Electrical characteristics (curves)\n## Test circuits\n# Package mechanical data\n# Revision history","[{\"question\":\"What are the key features of the ST13003/ST13003-K transistor?\",\"answer\":\"The datasheet lists high voltage capability, low spread of dynamic parameters, and very high switching speed.\"},{\"question\":\"What absolute maximum collector-emitter voltage values are provided?\",\"answer\":\"It specifies VCES = 700 V and VCEO = 400 V under the stated conditions.\"},{\"question\":\"What applications are recommended for this device?\",\"answer\":\"Applications include electronic ballast for fluorescent lighting (CFL) and SMPS for battery chargers.\"}]","ST13003 - High voltage fast-switching NPN power transistor Datasheet - Production data | PDF",1791810282,25]