[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-560896-105":59,"doc-detail-560896-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","silicon-diffused-power-transistor-bu508af-technical-data-sheet","Silicon Diffused Power Transistor BU508AF - Technical Data Sheet","","Silicon diffused power transistor BU508AF specification describes high-voltage, high-speed switching NPN devices in a fully isolated SOT199 package. It provides key electrical limits and operating conditions including peak collector-emitter voltage, collector and base currents, total power dissipation, saturation voltages, and switching times for a 16 kHz horizontal deflection application. The sheet also lists pinning for base/collector/emitter, isolation and thermal characteristics, and typical graphs for saturation behavior, safe operating area, and power derating versus heatsink/junction temperatures.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/silicon-diffused-power-transistor-bu508af-technical-data-sheet/560896/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/silicon-diffused-power-transistor-bu508af-technical-data-sheet/560896.png","ImageObject",300,407,{"name":92,"@type":93},"Terk","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-20","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":29},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What is the intended application of BU508AF?","Question",{"text":112,"@type":113},"BU508AF is designed primarily for horizontal deflection circuits in color television receivers, where high-speed switching is required.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What are the absolute maximum ratings for collector-emitter voltage and currents?",{"text":117,"@type":113},"The collector-emitter peak voltage VCESM is up to 1500 V, collector current IC is up to 8 A, and peak collector current ICM is up to 15 A (per the provided maximum limits).",{"name":119,"@type":110,"acceptedAnswer":120},"How are the switching times specified for horizontal deflection operation?",{"text":121,"@type":113},"Switching times are given for a 16 kHz line deflection circuit, including turn-off storage time and turn-off fall time, under defined saturation and component conditions listed in the dynamic characteristics section.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},560896,1791834474,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":29,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":34,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},1099525198933,"https://ap-avatar.wpscdn.com/davatar_155a257f0dc6eb9ab79c44ca47cae57d","Silicon Diffused Power Transistor BU508AF  \nGENERAL DESCRIPTION  \nHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.  \nQUICK REFERENCE DATA  \n\n| SYMBOL | PARAMETER | CONDITIONS | TYP. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- |\n| VCESM | Collector-emitter voltage peak value | VBE = 0 V | - | 1500 | V |\n| VCEO | Collector-emitter voltage (open base) |  | - | 700 | V |\n| IC | Collector current (DC) |  | - | 8 | A |\n| ICM | Collector current peak value |  | - | 15 | A |\n| Ptot | Total power dissipation | Ths ≤ 25 ˚C | - | 34 | W |\n| VCEsat | Collector-emitter saturation voltage | IC = 4.5 A; IB = 1.6 A | - | 1.0 | V |\n| ICsat | Collector saturation current | f = 16 kHz | 4.5 | - | A |\n| tf | Fall time | ICsat = 4.5 A; f = 16kHz | 0.7 | - | µs |\n\nPINNING-SOT199  \n\n| PIN | DESCRIPTION |\n| --- | --- |\n| 1 | base |\n| 2 | collector |\n| 3 | emitter |\n| case | isolated |\n\nPIN CONFIGURATION  \nSYMBOL  \nLIMITING VALUES  \nLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)  \n\n| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- |\n| VCESM | Collector-emitter voltage peak value | VBE = 0 V | - | 1500 | V |\n| VCEO | Collector-emitter voltage (open base) |  | - | 700 | V |\n| IC | Collector current (DC) |  | - | 8 | A |\n| ICM | Collector current peak value |  | - | 15 | A |\n| IB | Base current (DC) |  | - | 4 | A |\n| IBM | Base current peak value |  | - | 6 | A |\n| Ptot | Total power dissipation | Ths ≤ 25 ˚C | - | 34 | W |\n| Tstg\u003Cbr>Tj | Storage temperature |  | -65 | 150 | ˚C |\n|  | Junction temperature |  | - | 150 | ˚C |\n\nTHERMAL RESISTANCES  \n\n| SYMBOL | PARAMETER | CONDITIONS | TYP. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- |\n| Rth j-hs | Junction to heatsink | without heatsink compound | - | 3.7 | K/W |\n| Rth j-hs | Junction to heatsink | with heatsink compound | - | 2.8 | K/W |\n| Rth j-a | Junction to ambient | in free air | 35 | - | K/W |\n\nJuly 1998 1 Rev 1.200  \nSilicon Diffused Power Transistor BU508AF  \nISOLATION LIMITING VALUE & CHARACTERISTIC  \nThs = 25 ˚C unless otherwise specified  \n\n| SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- | --- |\n| Visol | Repetitive peak voltage from all three terminals to external heatsink | R. H. ≤ 65 % ; clean and dustfree | - |  | 2500 | V |\n| Cisol | Capacitance from T2 to external heatsink | f = 1 MHz | - | 22 | - | pF |\n\nSTATIC CHARACTERISTICS  \nThs = 25 ˚C unless otherwise specified  \n\n| SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- | --- |\n| ICES | Collector cut-off current 1 | VBE = 0 V; VCE = VCESMmax | - | - | 1.0 | mA |\n| ICES |  | VBE = 0 V; VCE = VCESMmax; | - | - | 2.0 | mA |\n| IEBO | Emitter cut-off current | Tj = 125 ˚C\u003Cbr>VEB = 6.0 V; IC = 0 A | - | - | 10 | mA |\n| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 100 mA; L = 25 mH | 700 | - | - | V |\n| VCEsat | Collector-emitter saturation voltages | IC = 4.5 A; IB = 1.6 A | - | - | 1.0 | V |\n| VBEsat | Base-emitter saturation voltage | IC = 4.5 A; IB = 2 A | - | - | 1.1 | V |\n| hFE | DC current gain | IC = 100 mA; VCE = 5 V | 6 | 13 | 30 | - |\n\nDYNAMIC CHARACTERISTICS  \nThs = 25 ˚C unless otherwise specified  \n\n| SYMBOL | PARAMETER | CONDITIONS | TYP. | MAX. | UNIT |\n| --- | --- | --- | --- | --- | --- |\n| fT | Transition frequency at f = 5 MHz | IC = 0.1 A;VCE = 5 V | 7 | - | MHz |\n| CC | Collector capacitance at f = 1MHz | VCB = 10 V | 125 | - | pF |\n| ts\u003Cbr>tf | Switching times (16 kHz line deflection circuit)\u003Cbr>Turn-off storage time\u003Cbr>Turn-off fall time | ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;\u003Cbr>-IBM = 2.25 A | 6.5\u003Cbr>0.7 | -\u003Cbr>- | µs\u003Cbr>µs |\n\n1 Measured with half sine-wave voltage (curve tracer) .  \nJuly 1998 2 Rev 1.200  \nSilicon Diffused Power Transistor BU508AF  \n| ","cbCaivpDCq9SSqbI","https://ap.wps.com/l/cbCaivpDCq9SSqbI","pdf",65830,"English","# General description\n# Quick reference data\n# Pinning (SOT199)\n# Limiting values and thermal resistances\n# Isolation limiting value & characteristic\n# Static characteristics\n# Dynamic characteristics\n# Test circuits and typical performance figures","[{\"question\":\"What is the intended application of BU508AF?\",\"answer\":\"BU508AF is designed primarily for horizontal deflection circuits in color television receivers, where high-speed switching is required.\"},{\"question\":\"What are the absolute maximum ratings for collector-emitter voltage and currents?\",\"answer\":\"The collector-emitter peak voltage VCESM is up to 1500 V, collector current IC is up to 8 A, and peak collector current ICM is up to 15 A (per the provided maximum limits).\"},{\"question\":\"How are the switching times specified for horizontal deflection operation?\",\"answer\":\"Switching times are given for a 16 kHz line deflection circuit, including turn-off storage time and turn-off fall time, under defined saturation and component conditions listed in the dynamic characteristics section.\"}]","Silicon Diffused Power Transistor BU508AF - Technical Data Sheet | PDF",1791804427,18]