[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562934-105":59,"doc-detail-562934-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","second-breakdown-fbsoa-non-destructive-testing","Second Breakdown FBSOA Non-Destructive Testing","","Verification of power transistor second breakdown capability is essential for both users and suppliers, especially under Forward Bias Safe Operating Area (FBSOA) and Reverse Bias Safe Operating Area (RBSOA) conditions. The document explains the physical hotspot mechanism caused by current crowding in the emitter and why conventional destructive methods to derive second breakdown limits are costly and time-consuming. It introduces a Non-Destruct FBSOA tester concept for NPN power transistors and describes energy-limitation detection circuitry and typical testing approaches.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/second-breakdown-fbsoa-non-destructive-testing/562934/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/second-breakdown-fbsoa-non-destructive-testing/562934.png","ImageObject",300,407,{"name":92,"@type":93},"acoobca","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-15","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":14},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What is the main purpose of second breakdown verification for power transistors?","Question",{"text":112,"@type":113},"To verify the device’s second breakdown capability and ensure safe operation by establishing limits for FBSOA-related and related conditions where second breakdown can occur.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"How do the document’s two operating conditions relate to second breakdown behavior?",{"text":117,"@type":113},"Second breakdown shows up under active-region safe operating area conditions: FBSOA during turn-on with forward-biased base and RBSOA during turn-off with reverse base current.",{"name":119,"@type":110,"acceptedAnswer":120},"Why is a non-destructive FBSOA tester needed instead of destructive testing?",{"text":121,"@type":113},"Destructive testing to generate complete second breakdown limit families of curves is expensive and time-consuming, and can require testing many transistors and potentially additional devices for temperature effects.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},562934,1792101061,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":14,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":52,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},3985747870733,"https://ap-avatar.wpscdn.com/davatar_a8503ba1806abce46bf441b54a3ca4cd","By AI Pshaenich  \n# INTRODUCTION\n\nA prime concern to both users and suppliers of powertransistors is verification of the second breakdown capa-bility of the devices.Second breakdown energy limitationcan manifest itself under two operating conditions:active-region safe operating area,commonly referred to as For-ward Bias Safe Operating Area(FBSOA);and ReverseBias Safe Operating Area(RBSOA).  \nFBSOA is defined for turn-on conditions where the baseis forward biased and forward base current,IB₁,flows,orwhen the base is open circuited.RBSOA,on the otherhand,occurs when reverse base current,IB₂,flows duringdevice turn-off.For either condition,second breakdown(S.B.)is the result of current crowding in theemitter fingerdue to direction of the lateral field in the base.The fieldcauses current crowding at the periphery of the emitterduring forward bias and at the center of theemitter duringreverse bias.This greater current density produces a hotspot which eventually causes the transistor to go into sec-ond breakdown.If the energy is not quickly removed,thedevice will be destroyed.  \nNOTE:The mechanism and theory of S.B.has been under inves-tigation since asearly as 1958.Rather than to briefly try to reviewthe complex phenomena,the reader may refer to the referenceslisted at the end of this paper.  \nThis paper will address the non-destruct testing ofFBSOA.Since conventional methods of measuring theS.B.limits of the FBSOA curve(Figure 1)invariablyresult in device failures,the generation of a complete fam-ily of curves through destructive testing is costly and timeconsuming.Generally,the transistor under test(TUT)ismeasured for S.B.capability in a common base configu-ration(Figure 2),allowing for easily adjustable andrepeatable collector current,collector-emitter voltage andpulse width measurements.To determine the S.B.capa-bility of the transistor,either the voltage or current for aparticular pulse width is increased until the device fails.Several transistorsare tested in this manner and the failedpoints recorded.The number of devices tested at each con-dition is dictated by the degree of clustering of failed parts;it is not unusual for as many as five to ten devices to betested at each point on an S.B.curve to determine a guar-anteed energy level.(The specification IsB is often listed  \n# HIGH VOLTAGE,HIGH CURRENT,NON-DESTRUCTIVE FBSOA TESTING\n\nThis Application Note provides specifications for a test instru-ment which can be used to perform non-destructive testing ofthe Second Breakdown(S.B.)limits of the Forward Bias SafeOperating Area(FBSOA)curve.In addition,this note ilustratestypical S.B.portions of the FBSOA and temperature deratingcurves for various technologies.  \nVCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)  \nHGURE1-Typical FBSOA Curve  \nFIGURE2-Simplified Common-Base Test Circuit forMeasuring FBSOA Second Breakdown  \non the transistor data sheet which defines the one guar-anteed point on the FBSOA curve.)For a single pulsewidth S.B.limitation curve,perhaps four different powerlevels are tested.A complete family of curves could thusrequire destructive testing of as many as 100 transistors:  \nTo further complicate the picture,if the temperatureeffects ofS.B.are investigated,even more devices must betested.  \nIf a non-destruct FBSOA tester can be used,then con-ceivably only one transistor(or perhaps several if the oneTUT fails or is degraded)can be used to generate the com-plete family of curves.This Application Note discusses thedesign and operation of a Non-Destruct FBSOA Tester forNPN power transistors.In addition,this Note illustratestypical S.B.portions of the FBSOA and temperature de-rating curves for various technologies.  \n## NON-DESTRUCT TESTERS\n\nAny non-destruct tester,be it FBSOA or RBSOA,requires an energy limitation detection circuit that willmeasure the onset of S.B.and very rapidly remove thisenergy from the TUT before it is overstressed.Some com-mercial testers detect the collapsing collector-emitter volt-age when S.B.occur","cbCairSyL4oxKxqg","https://ap.wps.com/l/cbCairSyL4oxKxqg","pdf",828793,"English","# Introduction\n# Non-Destruct Testers\n## Non-Destruct Second Breakdown Tester Circuit Operation","[{\"question\":\"What is the main purpose of second breakdown verification for power transistors?\",\"answer\":\"To verify the device’s second breakdown capability and ensure safe operation by establishing limits for FBSOA-related and related conditions where second breakdown can occur.\"},{\"question\":\"How do the document’s two operating conditions relate to second breakdown behavior?\",\"answer\":\"Second breakdown shows up under active-region safe operating area conditions: FBSOA during turn-on with forward-biased base and RBSOA during turn-off with reverse base current.\"},{\"question\":\"Why is a non-destructive FBSOA tester needed instead of destructive testing?\",\"answer\":\"Destructive testing to generate complete second breakdown limit families of curves is expensive and time-consuming, and can require testing many transistors and potentially additional devices for temperature effects.\"}]","Second Breakdown FBSOA Non-Destructive Testing | PDF",1791810110,25]