[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562797-105":59,"doc-detail-562797-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","n-channel-500v-031-14a-to-247-powermesh-ii-mosfet-datasheet-may-2001","N-CHANNEL 500V-0.31Ω - 14A TO-247 PowerMesh II MOSFET - Datasheet - May 2001","","PowerMESH II is a high-voltage N-channel MOSFET featuring extremely high dv/dt capability and gate charge minimized design. The datasheet provides absolute maximum ratings, thermal data, avalanche characteristics, and electrical characteristics at defined test conditions. It includes dynamic switching parameters for turn-on and turn-off, plus source-drain diode reverse-recovery data. Mechanical dimensions for TO-247 are specified alongside test circuit references for unclamped inductive loads and gate-charge measurements.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/n-channel-500v-031-14a-to-247-powermesh-ii-mosfet-datasheet-may-2001/562797/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/n-channel-500v-031-14a-to-247-powermesh-ii-mosfet-datasheet-may-2001/562797.png","ImageObject",300,407,{"name":92,"@type":93},"hdkawk","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":29},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the key electrical capabilities of the STW14NC50 MOSFET?","Question",{"text":112,"@type":113},"It supports a 500 V drain-source breakdown rating with a low typical RDS(on) around 0.31 Ω and a 14 A drain current rating. The device is also described as having extremely high dv/dt capability and gate charge minimized design.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"How do the datasheet switching parameters define turn-on and turn-off performance?",{"text":117,"@type":113},"The datasheet lists turn-on delay and rise times (td(on), tr), total gate charge (Qg) and gate-source/drain charge components. It also provides off-voltage rise/fall times and cross-over time for the switching-off characterization.",{"name":119,"@type":110,"acceptedAnswer":120},"What information is provided for ruggedness and protection testing?",{"text":121,"@type":113},"Avalanche characteristics include repetitive or non-repetitive avalanche current and single pulse avalanche energy, with constraints related to pulse width and maximum junction temperature. Notes also specify limits for safe operating area.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},562797,1791824832,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":29,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":44,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},3985747859855,"https://ap-avatar.wpscdn.com/davatar_276721f389ce27ea32af1340a28f341c","STW14NC50  \nN-CHANNEL 500V-0.31Ω - 14A TO-247 PowerMesh􀁝 II MOSFET  \nTYPE  \nSTW14NC50  \nV DSS  \n500V  \nRDS(on)  \n\u003C 0 .38Ω  \nID  \n14 A  \n■ TYPICAL RDS(on) = 0 .31Ω  \nEXTREMELY HIGH dv/dt CAPABILITY  \n■  \n100% AVALANCHE TESTED  \n■  \nNEW HIGH VOLTAGE BENCHMARK  \n■  \nGATE CHARGE MINIMIZED  \n■  \nDESCRIPTION  \nThe PowerMESH􀁝 II is the evolution of the first generation of MESH OVERLAY􀁝 . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.  \nAPPLICATIONS  \n■ SWITCH MODE POWER SUPPLIES (SMPS)  \n■ HIGH CURRENT, HIGH SPEED SWITCHING  \nDC-AC CONVERTERS FOR WELDING  \n■  \nEQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE  \nABSOLUTE MAXIMUM RATINGS  \nSymbol Parameter  \nV DS Drain-source Voltage (VGS = 0)  \nVDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage  \nID Drain Current (continuos) at TC = 25°C  \nID Drain Current (continuos) at TC = 100° CIDM (●) Drain Current (pulsed)  \nPTOT Total Dissipation at TC = 25°C  \nDerating Factor  \ndv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature  \nTj Max. Operating Junction Temperature  \n(•)Pulse width limited by safe operating area  \n3  \n2  \n1  \nTO-247  \nINTERNAL SCHEMATIC DIAGRAM  \nValue  \n500  \n500  \n±30  \n14  \n8.7  \n56  \n190  \n1.5  \n3.5  \n–65 to 150 150  \n(1)ISD ≤14A, di/dt ≤100A/µs, V DD≤ V (BR)DSS, Tj ≤ TJMAX.  \nUnit  \nV  \nV  \nV  \nA  \nA  \nA  \nW  \nW/°C  \nV/ns  \n° C  \n° C  \nMay 2001 1/8  \nSTW14NC50  \nTHERMAL DATA  \nRthj-case  \nRthj-amb  \nTl  \nThermal Resistance Junction-case Max  \nThermal Resistance Junction-ambient Max  \nMaximum Lead Temperature For Soldering Purpose  \nAVALANCHE CHARACTERISTICS  \nSymbol  \nIAR  \nE AS  \nParameter  \nAvalanche Current, Repetitive or Not-Repetitive  \n(pulse width limited by Tj max)  \nSingle Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, V DD = 50 V)  \n0.6630300  \nMax Value  \n14  \n800  \n°C/W  \n°C/W ° C  \nUnit  \nA  \nmJ  \nELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF  \nSymbol  \nV (BR)DSS  \nIDSS  \nIGSS  \nON (1)  \nSymbol  \nVGS(th)  \nRDS(on)  \nDYNAMIC  \nSymbol  \ngfs  \nCiss  \nCoss  \nCrss  \nParameter  \nDrain-source  \nBreakdown Voltage  \nZero Gate Voltage  \nDrain Current (VGS = 0)  \nGate-body Leakage Current (V DS = 0)  \nParameter  \nGate Threshold Voltage  \nStatic Drain-source On Resistance  \nParameter  \nForward Transconductance  \nInput Capacitance  \nOutput Capacitance  \nReverse Transfer Capacitance  \nTest Conditions  \nID = 250 µA, VGS = 0  \nV DS = Max Rating  \nV DS = Max Rating, TC = 125 ° C  \nVGS = ±30V  \nTest Conditions  \nV DS = VGS, ID = 250 µAVGS = 10V, ID = 7A  \nTest Conditions  \nV DS > ID(on) x RDS(on)max, ID =7A  \nV DS = 25V, f = 1 MHz, VGS = 0  \nMin.  \n500  \nMin.  \n2  \nMin.  \nTyp.  \nTyp.  \n3  \n0.31  \nTyp.  \n13  \n2000  \n300  \n43  \nMax.  \n1  \n50  \n± 100  \nMax.  \n4  \n0.38  \nMax.  \nUnit  \nV  \nµA  \nµA  \nnA  \nUnit  \nV  \nΩ  \nUnit  \nS  \npF  \npF  \npF  \n2/8  \nSTW14NC50  \nELECTRICAL CHARACTERISTICS (CONTINUED)  \nSWITCHING ON  \nSymbol  \ntd(on) tr  \nQg  \nQ gs  \nQ gd  \nParameter  \nTurn-on Delay Time Rise Time  \nTotal Gate Charge  \nGate-Source Charge  \nGate-Drain Charge  \nSWITCHING OFF  \nSymbol  \ntr(Voff) tf  \ntc  \nParameter  \nOff-voltage Rise Time Fall Time  \nCross-over Time  \nSOURCE DRAIN DIODE  \nSymbol  \nISDISDM (2) VSD (1) trr  \nQrr  \nIRRM  \nParameter  \nSource-drain Current  \nSource-drain Current (pulsed)  \nForward On Voltage Reverse Recovery Time  \nReverse Recovery Charge Reverse Recovery Current  \nTest Conditions  \nV DD = 250V, ID = 7 A  \nRG = 4 .7Ω, VGS = 10V (see test circuit, Figure 3)  \nV DD = 400V, ID = 14 A, VGS = 10V, RG = 4 .7Ω  \nTest Conditions  \nV DD = 400V, ID = 14 A, RG = 4 .7Ω, VGS = 10V (see test circuit, Figure 5)  \nTest Conditions  \nISD = 14 A, VGS = 0  \nISD = 14 A, di/dt = 100A/µs, V DD = 100V, Tj = 150° C (see test circuit, Figure 5)  \nMin.  \nMin.  \nMin.  \nTyp.  \n20  \n23  \n75  \n10  \n38  \nTyp.  \n25  \n30  \n62  \nTyp.  \n670  \n6.7  \n20  \nMax.  \n90  \nMax.  \nMax.  ","cbCaiaNlihbNoPht","https://ap.wps.com/l/cbCaiaNlihbNoPht","pdf",96724,"English","# PowerMESH II Overview\n# Applications\n# Absolute Maximum Ratings\n# Thermal Data\n# Avalanche Characteristics\n# Electrical Characteristics (TCASE=25°C)\n## Switching On/Off\n## Source-Drain Diode\n# Test Conditions and Figures\n# TO-247 Mechanical Data","[{\"question\":\"What are the key electrical capabilities of the STW14NC50 MOSFET?\",\"answer\":\"It supports a 500 V drain-source breakdown rating with a low typical RDS(on) around 0.31 Ω and a 14 A drain current rating. The device is also described as having extremely high dv/dt capability and gate charge minimized design.\"},{\"question\":\"How do the datasheet switching parameters define turn-on and turn-off performance?\",\"answer\":\"The datasheet lists turn-on delay and rise times (td(on), tr), total gate charge (Qg) and gate-source/drain charge components. It also provides off-voltage rise/fall times and cross-over time for the switching-off characterization.\"},{\"question\":\"What information is provided for ruggedness and protection testing?\",\"answer\":\"Avalanche characteristics include repetitive or non-repetitive avalanche current and single pulse avalanche energy, with constraints related to pulse width and maximum junction temperature. Notes also specify limits for safe operating area.\"}]","N-CHANNEL 500V-0.31Ω - 14A TO-247 PowerMesh II MOSFET - Datasheet - May 2001 | PDF",1791809748,23]