[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-183314-105":59,"doc-detail-183314-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","microchip-apt35gp120bg-datasheet","Microchip APT35GP120BG Datasheet","","Device electrical characteristics for the Microchip APT35GP120B(G) power MOSFET, including maximum ratings and safe operating limits. Provides collector-emitter and gate-emitter voltage specifications, continuous and pulsed collector current values versus temperature, junction temperature range, and total power dissipation. Includes breakdown voltage, gate threshold, on-state voltage behavior at different temperatures and drive conditions, leakage current, capacitances, gate charge parameters, and switching timing and energy (turn-on/turn-off, inductive switching).",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/microchip-apt35gp120bg-datasheet/183314/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/microchip-apt35gp120bg-datasheet/183314.png","ImageObject",300,407,{"name":92,"@type":93},"Sage","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-09-18","2026-09-02",true,{"@type":102,"interactionType":103,"userInteractionCount":19},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the key maximum ratings for APT35GP120B(G)?","Question",{"text":112,"@type":113},"The datasheet lists maximum collector-emitter voltage, gate-emitter voltage limits, continuous and pulsed collector current ratings, total power dissipation, junction temperature operating/storage range, and maximum lead temperature for soldering.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"How is the gate threshold voltage specified?",{"text":117,"@type":113},"Gate threshold voltage is given as VGE(th) under defined conditions (VCE equals VGE, IC equals 1 mA, and Tj equals 25°C), with min/typ/max values.",{"name":119,"@type":110,"acceptedAnswer":120},"What switching performance metrics are provided?",{"text":121,"@type":113},"It provides switching delays and waveform times such as turn-on delay (td(on)), current rise time (tr), turn-off delay (td(off)), current fall time (t f), plus switching energy figures for turn-on and turn-off under inductive switching conditions.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},183314,1788352113,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":19,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":29,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":129,"read_time":143},687197207057,"https://ap-avatar.wpscdn.com/davatar_29158cc5080c5b710cf443261637dec0","| Symbol | Parameter | APT35GP120B(G) | UNIT |\n| --- | --- | --- | --- |\n| VCES | Collector-Emitter Voltage | 1200 | Volts |\n| V GE | Gate-Emitter Voltage | ±20 |  |\n| V GEM | Gate-Emitter Voltage Transient | ±30 |  |\n| IC1 | Continuous Collector Current @ TC = 25°C | 96 | Amps |\n| IC2 | Continuous Collector Current @ TC = 110°C | 46 |  |\n| I CM | Pulsed Collector Current 1 @ TC = 25°C\u003Cbr>| 140 |  |\n| RBSOA | Reverse Bias Safe Operating Area @ TJ = 150°C | 140A @ 960V |  |\n| PD | Total Power Dissipation | 543 | Watts |\n| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |\n| TL | Max. Lead Temp. for Soldering: 0.063\" from Case for 10 Sec. | 300 |  |\n\n\n| Symbol | Characteristic / Test Conditions | MIN | TYP | MAX | UNIT |\n| --- | --- | --- | --- | --- | --- |\n| BVCES | Collector-Emitter Breakdown Voltage (V GE = 0V, IC = 250µA) | 1200 |  |  | Volts |\n| VGE(TH) | Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) | 3 | 4.5 | 6 |  |\n| VCE(ON) | Collector-Emitter On Voltage (V GE = 15V, IC = 35A, Tj = 25°C) |  | 3.3 | 3.9 |  |\n|  | Collector-Emitter On Voltage (V GE = 15V, IC = 35A, Tj = 125°C) |  | 3 |  |  |\n| ICES | Collector Cut-off Current (VCE = 1200V, V GE = 0V, Tj = 25°C) 2 |  |  | 250 | µA |\n|  | Collector Cut-off Current (VCE = 1200V, V GE = 0V, Tj = 125°C) 2 |  |  | 2500 |  |\n| IGES | Gate-Emitter Leakage Current (V GE = ±20V) |  |  | ±100 | nA |\n\n| Symbol | Characteristic | Test Conditions | MIN | TYP | MAX | UNIT |\n| --- | --- | --- | --- | --- | --- | --- |\n| Cies | Input Capacitance | Capacitance\u003Cbr>V GE = 0V, VCE = 25Vf = 1 MHz |  | 3240 |  | pF |\n| Coes | Output Capacitance |  |  | 248 |  |  |\n| Cres | Reverse Transfer Capacitance |  |  | 31 |  |  |\n| VGEP | Gate-to-Emitter Plateau Voltage | Gate Charge\u003Cbr>V GE = 15V\u003Cbr>VCE = 600V\u003Cbr>IC = 35A |  | 7.5 |  | V |\n| Qg | Total Gate Charge 3\u003Cbr>|  |  | 150 |  | nC |\n| Qge | Gate-Emitter Charge |  |  | 21 |  |  |\n| Qgc | Gate-Collector (\"Miller\") Charge |  |  | 62 |  |  |\n| RBSOA | Reverse Bias Safe Operating Area | TJ = 150°C, RG = 5Ω, V GE = 15V, L = 100µH,VCE = 960V | 140 |  |  | A |\n| td(on) | Turn-on Delay Time | Inductive Switching (25°C)\u003Cbr>V CC = 600V V GE = 15VIC = 35ARG = 5Ω TJ = +25°C |  | 16 |  | ns |\n| tr | Current Rise Time |  |  | 20 |  |  |\n| td(off) | Turn-off Delay Time |  |  | 94 |  |  |\n| t f | Current Fall Time |  |  | 40 |  |  |\n| Eon1 | Turn-on Switching Energy 4 |  |  | 750 |  | µJ |\n| Eon2 | Turn-on Switching Energy (Diode) 5 |  |  | 1305 |  |  |\n| E off | Turn-off Switching Energy 6 |  |  | 680 |  |  |\n| td(on) | Turn-on Delay Time | Inductive Switching (125°C)\u003Cbr>V CC = 600V V GE = 15VIC = 35ARG = 5Ω TJ = +125°C |  | 16 |  | ns |\n| tr | Current Rise Time |  |  | 20 |  |  |\n| td(off) | Turn-off Delay Time |  |  | 147 |  |  |\n| t f | Current Fall Time |  |  | 75 |  |  |\n| Eon1 | Turn-on Switching Energy 4 |  |  | 750 |  | µJ |\n| Eon2 | Turn-on Switching Energy (Diode) 5 |  |  | 2132 |  |  |\n| E off | Turn-off Switching Energy 6 |  |  | 1744 |  |  |\n\n|  | MIN | TYP | MAX | UNIT |\n| --- | --- | --- | --- | --- |\n|  |  |  | .23 | °C/W |\n|  |  |  | N/A |  |\n|  |  |  | 5.90 | gm |\n\n| 250µs \u003C0.5 | PULSE % DU | TE TY CY | ST CLE |  |  |  |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n|  |  |  |  |  | T |  | C  |  |  |  |  |\n|  |  |  |  |  |  | = 25° |  |  |  |  |  |\n|  |  |  |  |  | J |  | \u003Cbr>|  |  |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n|  |  |  | TJ |  | = 125°C |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  | | TJ |  |  |  |\n|  |  |  |  |  |  |  |  |  | = -55°C |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |\n\n|  |  |  |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n|  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |\n|  |  |  |  |  |  |  |  |\n|  |  |  |  |  | ","cbCaibKMDYjSMaJ2","https://ap.wps.com/l/cbCaibKMDYjSMaJ2","pdf",264541,"English","# Electrical Characteristics\n## Maximum Ratings\n## Breakdown and On-State Parameters\n## Leakage and Capacitance\n## Gate Charge and Switching Performance","[{\"question\":\"What are the key maximum ratings for APT35GP120B(G)?\",\"answer\":\"The datasheet lists maximum collector-emitter voltage, gate-emitter voltage limits, continuous and pulsed collector current ratings, total power dissipation, junction temperature operating/storage range, and maximum lead temperature for soldering.\"},{\"question\":\"How is the gate threshold voltage specified?\",\"answer\":\"Gate threshold voltage is given as VGE(th) under defined conditions (VCE equals VGE, IC equals 1 mA, and Tj equals 25°C), with min/typ/max values.\"},{\"question\":\"What switching performance metrics are provided?\",\"answer\":\"It provides switching delays and waveform times such as turn-on delay (td(on)), current rise time (tr), turn-off delay (td(off)), current fall time (t f), plus switching energy figures for turn-on and turn-off under inductive switching conditions.\"}]","Microchip APT35GP120BG Datasheet | PDF",15]