[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-560920-105":59,"doc-detail-560920-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","ksd288-npn-epitaxial-silicon-transistor-absolute-maximum-ratings-electrical-characteristics","KSD288 - NPN Epitaxial Silicon Transistor - Absolute Maximum Ratings & Electrical Characteristics","","KSD288 datasheet Rev. A (February 2000) describes the NPN epitaxial silicon transistor intended for low-frequency high-power amplification. It provides absolute maximum ratings including VCBO 80V, PC 25W at TC=25°C, TJ 150°C, and storage temperature -55 to 150°C. Electrical characteristics cover collector-base, collector-emitter, and emitter-base breakdown voltages, collector cut-off current, and DC current gain hFE with test conditions. It also includes typical/saturation and safe operating area guidance, plus TO-220 package dimensions and regulatory disclaimers.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/ksd288-npn-epitaxial-silicon-transistor-absolute-maximum-ratings-electrical-characteristics/560920/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/ksd288-npn-epitaxial-silicon-transistor-absolute-maximum-ratings-electrical-characteristics/560920.png","ImageObject",300,407,{"name":92,"@type":93},"Terk","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-23","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":34},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the KSD288 absolute maximum ratings at TC=25°C?","Question",{"text":112,"@type":113},"The datasheet lists VCBO=80V, PC=25W, TJ=150°C, and TSTG from -55 to 150°C (unless otherwise noted). It also specifies VCEO=55V and VEBO=5V.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"How are breakdown voltages and current gain tested in the electrical characteristics?",{"text":117,"@type":113},"Collector-base breakdown uses IC=500µA with IE=0, collector-emitter breakdown uses IC=10mA with IB=0, and emitter-base breakdown uses IE=500µA with IC=0. DC current gain hFE is specified with VCE=5V and IC=0.5A, with min/max values depending on the hFE class.",{"name":119,"@type":110,"acceptedAnswer":120},"What guidance is provided in the typical characteristics section?",{"text":121,"@type":113},"The document includes static, DC current gain, saturation voltage, and collector output capacitance graphs, plus a safe operating area figure and power derating information to support design limits.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},560920,1791841147,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":34,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":19,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":52},1099525198933,"https://ap-avatar.wpscdn.com/davatar_155a257f0dc6eb9ab79c44ca47cae57d","KSD288  \n©2000 Fairchild Semiconductor International Rev. A, February 2000  \n\n| \u003Cbr>\u003Cbr>|  |  |  |  |  |  |  |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |\n| KSD288 |  |  |  |  |  |  |  |  |  |  |  |  |\n| Power Regulator\u003Cbr>Low Frequency High Power Amplifier\u003Cbr>• Collector-Base Voltage : VCBO=80V\u003Cbr>• Collector Dissipation : PC=25W(TC=25°C)\u003Cbr>1 |  |  |  |  |  | |  |  |  |  |  |  |\n| 1. Base 2.Collector 3. Emitter\u003Cbr>NPN Epitaxial Silicon Transistor\u003Cbr>Absolute Maximum Ratings TC=25°C unless otherwise noted |  |  |  |  |  |  |  |  |  |  |  |  |\n| Symbol | Parameter |  |  |  | Value |  |  |  |  |  | Units |  |\n| VCBO | Collector-Base Voltage |  |  |  | 80 |  |  |  |  |  | V |  |\n| V CEO | Collector-Emitter Voltage |  |  |  | 55 |  |  |  |  |  | V |  |\n| VEBO | Emitter-Base Voltage |  |  |  | 5 |  |  |  |  |  | V |  |\n| IC | Collector Current |  |  |  | 3 |  |  |  |  |  | A |  |\n| PC | Collector Dissipation (TC=25°C) |  |  |  | 25 |  |  |  |  |  | W |  |\n| TJ | Junction Temperature |  |  |  | 150 |  |  |  |  |  | °C |  |\n| TSTG | Storage Temperature |  |  |  | -55 ~ 150 |  |  |  |  |  | °C |  |\n| Electrical Characteristics TC=25°C unless otherwise noted |  |  |  |  |  |  |  |  |  |  |  |  |\n| Symbol | Parameter |  | Test Condition |  |  |  | Min. |  | Typ. | Max. |  | Units |\n| BVCBO | Collector-Base Breakdown Voltage |  | IC=500µA, IE=0 |  |  |  | 80 |  |  |  |  | V |\n| BV CEO | Collector-Emitter Breakdown Voltage |  | IC=10mA, IB=0 |  |  |  | 55 |  |  |  |  | V |\n| BVEBO | Emitter-Base Breakdown Voltage |  | IE=500µA, IC=0 |  |  |  | 5 |  |  |  |  | V |\n| ICBO | Collector Cut-off Current |  | V CB=50V, IE=0 |  |  |  |  |  |  | 50 |  | µA |\n| hFE | DC Current Gain |  | VCE=5V, IC=0.5A |  |  |  | 40 |  |  | 240 |  |  |\n| VCE(sat) | Collector-Emitter Saturation Voltage |  | IC=1A, IB=0.1A |  |  |  |  |  |  | 1 |  | V |\n| hFE Classification |  |  |  |  |  |  |  |  |  |  |  |  |\n| Classification |  | R |  | O |  |  |  | Y |  |  |  |  |\n| hFE |  | 40 ~ 80 |  | 70 ~ 140 |  |  |  | 120 ~ 240 |  |  |  |  |\n|  |  |  |  |  |  |  |  |  |  |  |  |  |\n\n\n| Typical Characteristics |  |  |  |\n| --- | --- | --- | --- |\n| VBE(sat ), VCE(sat)[V], SATURATION VOLTAGE Ic[A], COLLECTOR CURRENT\u003Cbr>IC[A], COLLECTOR CURRENT | 2.0\u003Cbr>1.8\u003Cbr>1.6\u003Cbr>1.4\u003Cbr>1.2\u003Cbr>1.0\u003Cbr>0.8\u003Cbr>0.6\u003Cbr>0.4\u003Cbr>0.2\u003Cbr>\u003Cbr>0 2 4 6 8 10 12 14 16 18 20\u003Cbr>VCE[V], COLLECTOR-EMITTER VOLTAGE\u003Cbr>Figure 1. Static Characteristic\u003Cbr>10\u003Cbr>1\u003Cbr>0.1\u003Cbr>0.01\u003Cbr>B V BE V CE (sat) \u003Cbr>\u003Cbr>(sat)\u003Cbr>0.1 1 10\u003Cbr>IC[A], COLLECTOR CURRENT\u003Cbr>Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage\u003Cbr>10\u003Cbr>1\u003Cbr>0.1\u003Cbr>* o 1ms \u003Cbr>1.Tc=25 C Thermal l imi tat io n 2.*Sing le Pul se The rma l l im it at io n\u003Cbr>DC S/B l im ita ti on S/B li mitation\u003Cbr>\u003Cbr>\u003Cbr>\u003Cbr>\u003Cbr>\u003Cbr>1 10 100\u003Cbr>VCE[V], COLLECTOR-EMITTER VOLTAGE | PC [W], POWER DISSIPATION COB[pF], CAPACITANCE hFE, DC CURRENT GAIN | 10000\u003Cbr>1000\u003Cbr>100\u003Cbr>10\u003Cbr>CE \u003Cbr>\u003Cbr>= 5V\u003Cbr>0.01 0.1 1 10\u003Cbr>IC[A], COLLECTOR CURRENT\u003Cbr>Figure 2. DC current Gain\u003Cbr>1000\u003Cbr>100\u003Cbr>10\u003Cbr>1\u003Cbr>\u003Cbr>1 10 100\u003Cbr>VCB[V], COLLECTOR BASE VOLTAGE\u003Cbr>Figure 4. Collector Output Capacitance\u003Cbr>40\u003Cbr>35\u003Cbr>30\u003Cbr>25\u003Cbr>20\u003Cbr>15\u003Cbr>10\u003Cbr>5\u003Cbr>0\u003Cbr>\u003Cbr>25 50 75 100 125 150 175\u003Cbr>TC[oC], CASE TEMPERATURE |\n| Figure 5. Safe Operating Area Figure 6. Power Derating |  |  |  |\n\n©2000 Fairchild Semiconductor International Rev. A, February 2000  \nKSD288  \n\n| Package Demensions\u003Cbr>TO-220 |  |\n| --- | --- |\n| | |\n| \u003Cbr>10.00 ±0.20\u003Cbr>Dimensions in Millimeters |  |\n\n©2000 Fairchild Semiconductor International Rev. A, February 2000  \nKSD288  \nTRADEMARKS  \n\n| The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.\u003Cbr>ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™\u003Cbr>FACT Quiet Series™ FAST®\u003Cbr>FASTr™ GTO™\u003Cbr>HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™\u003Cbr>Quiet Series™ SuperSOT","cbCaiuYLvzdDFKHA","https://ap.wps.com/l/cbCaiuYLvzdDFKHA","pdf",45805,"English","# Absolute Maximum Ratings\n## Electrical Characteristics\n# Typical Characteristics\n## Figure 1-6\n# Package Dimensions (TO-220)\n# Trademarks\n# Disclaimer and Life Support Policy\n# Product Status Definitions","[{\"question\":\"What are the KSD288 absolute maximum ratings at TC=25°C?\",\"answer\":\"The datasheet lists VCBO=80V, PC=25W, TJ=150°C, and TSTG from -55 to 150°C (unless otherwise noted). It also specifies VCEO=55V and VEBO=5V.\"},{\"question\":\"How are breakdown voltages and current gain tested in the electrical characteristics?\",\"answer\":\"Collector-base breakdown uses IC=500µA with IE=0, collector-emitter breakdown uses IC=10mA with IB=0, and emitter-base breakdown uses IE=500µA with IC=0. DC current gain hFE is specified with VCE=5V and IC=0.5A, with min/max values depending on the hFE class.\"},{\"question\":\"What guidance is provided in the typical characteristics section?\",\"answer\":\"The document includes static, DC current gain, saturation voltage, and collector output capacitance graphs, plus a safe operating area figure and power derating information to support design limits.\"}]","KSD288 - NPN Epitaxial Silicon Transistor - Absolute Maximum Ratings & Electrical Characteristics | PDF",1791804481]