[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-562854-105":3,"doc-detail-562854-en":81,"detail-sidebar-cat-0-en-105":98},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":74,"head_meta":76,"extra_data":78,"updated_unix":80},105,"en","irf3205z-automotive-mosfet-hexfet-power-mosfet-specifications","IRF3205Z - Automotive MOSFET HEXFET Power MOSFET - Specifications","","Automotive HEXFET power MOSFET IRF3205Z datasheet outlining key features for high efficiency and reliability in automotive and broader applications. Highlights include advanced process technology, ultra-low on-resistance, 175°C operating junction temperature, fast switching, and repetitive avalanche capability. Provides absolute maximum ratings covering drain currents, power dissipation, gate voltage limits, avalanche energy, and operating/storage temperature range, plus thermal resistance values and electrical characteristics at TJ=25°C with conditions, limits, and switching and charge parameters.",{"@graph":14,"@context":73},[15,34,56],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/document/technology/","Technology",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/document/irf3205z-automotive-mosfet-hexfet-power-mosfet-specifications/562854/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/irf3205z-automotive-mosfet-hexfet-power-mosfet-specifications/562854.png","ImageObject",300,407,{"name":42,"@type":43},"ahduag","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":52,"interactionType":53,"userInteractionCount":55},"InteractionCounter",{"@type":54},"ViewAction",6,{"@type":57,"mainEntity":58},"FAQPage",[59,65,69],{"name":60,"@type":61,"acceptedAnswer":62},"What are the key operating and performance features of the IRF3205Z HEXFET power MOSFET?","Question",{"text":63,"@type":64},"The datasheet lists advanced process technology, ultra-low on-resistance, a 175°C operating junction temperature, fast switching, and repetitive avalanche capability up to Tjmax.","Answer",{"name":66,"@type":61,"acceptedAnswer":67},"What does the absolute maximum ratings section specify for IRF3205Z?",{"text":68,"@type":64},"It specifies maximum drain currents (continuous and pulsed), power dissipation, gate-to-source voltage limits, single-pulse and tested avalanche energy, avalanche current guidance, and the operating/storage temperature range.",{"name":70,"@type":61,"acceptedAnswer":71},"Which electrical characteristics at TJ = 25°C are reported for IRF3205Z?",{"text":72,"@type":64},"It reports breakdown voltage (V(BR)DSS), on-resistance (RDS(on)), threshold voltage (VGS(th)), transconductance (gfs), leakage currents, gate charge (Qg/Qgs/Qgd), and switching timing parameters such as td(on), tr, td(off), and tf, along with capacitance values.","https://schema.org",{"og:url":32,"og:type":75,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":77,"canonical":32},"index,follow",{"doc_id":79,"site_id":7},562854,1791858262,{"code":4,"msg":82,"data":83},"success",{"doc_id":79,"user_id":84,"nickname":42,"user_avatar":85,"doc_module":4,"category_id":55,"category_name":29,"doc_title":10,"doc_description":12,"doc_content":86,"file_id":87,"file_url":88,"file_type":89,"file_size":90,"view_count":55,"is_deleted":4,"is_public":22,"is_downloadable":22,"audit_status":22,"page_count":91,"language":92,"language_code":8,"site_id":7,"html_lang":8,"table_of_contents":93,"faqs":94,"seo_title":95,"seo_description":12,"update_tm":96,"read_time":97},3985747870414,"https://ap-avatar.wpscdn.com/davatar_9964176cb1d06d4a9deccf72a44ae3dc","AUTOMOTIVE MOSFET  \nPD-94653  \nIRF3205Z  \nHEXFET® Power MOSFET  \nFeatures  \n● Advanced Process Technology  \n● Ultra Low On-Resistance  \n● 175°COperating Temperature  \n● Fast Switching  \n● Repetitive Avalanche Allowed up to Tjmax  \nDescription  \nV DSS = 55VRDS(on) = 6.5mΩ  \nID = 75A  \nSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design area 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.  \nAbsolute Maximum Ratings  \n|  | Parameter | Max. | Units |\n| --- | --- | --- | --- |\n| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 110 | A |\n| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 78 |  |\n| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 |  |\n| IDM | Pulsed Drain Current 􀀁 | 440 |  |\n| PD @TC = 25°C | Power Dissipation | 170 | W |\n|  | Linear Derating Factor | 1.1 | W/°C |\n| VGS | Gate-to-Source Voltage | ± 20 | V |\n| EAS (Thermally limited) | Single Pulse Avalanche Energy􀀂 | 180 | mJ |\n| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value 􀀃 | 250 |  |\n| IAR | Avalanche Current 􀀁 | See Fig. 12a, 12b, 15, 16 | A |\n| EAR | Repetitive Avalanche Energy 􀀅 |  | mJ |\n| TJ TSTG | Operating Junction and\u003Cbr>Storage Temperature Range | -55 to + 175 | °C |\n|  | Soldering Temperature, for 10 seconds | 300 (1 .6mm from case ) |  |\n|  | Mounting Torque, 6-32 or M3 screw | 10 lbf􀀆in (1 . 1N􀀆 m) |  |\n\nThermal Resistance  \n\n|  | Parameter | Typ. | Max. | Units |\n| --- | --- | --- | --- | --- |\n| RθJC | Junction-to-Case | ––– | 0.9 | °C/W |\n| RθCS | Case-to-Sink, Flat, Greased Surface | 0.50 | ––– |  |\n| RθJA | Junction-to-Ambient | ––– | 62 |  |\n\n[www.irf.com](www.irf.com) 1  \n􀀁􀀂􀀃􀀄􀀂􀀅􀀁  \nThis datasheet has been downloaded from [http://www.digchip.com](http://www.digchip.com at)[ at](http://www.digchip.com at) this page  \n􀀁􀀂􀀃􀀄􀀅􀀆􀀇􀀈  \nElectrical Characteristics @ TJ = 25°C (unless otherwise specified)  \n|  | Parameter | Min. | Typ. | Max. | Units | Conditions |\n| --- | --- | --- | --- | --- | --- | --- |\n| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 | ––– | ––– | V | VGS = 0V, ID = 250µA |\n| ∆V(BR)DSS/∆TJ | Breakdown Voltage Temp. Coefficient | ––– | 0.051 | ––– | V/°C | Reference to 25°C, ID = 1mA |\n| RDS(on) | Static Drain-to-Source On-Resistance | ––– | 4.9 | 6.5 | mΩ | VGS = 10V, ID = 66A 􀀄 |\n| VGS(th) | Gate Threshold Voltage | 2.0 | ––– | 4.0 | V | VDS = VGS, ID = 250µA |\n| gfs | Forward Transconductance | 71 | ––– | ––– | S | VDS = 25V, ID = 66A |\n| IDSS | Drain-to-Source Leakage Current | ––– | ––– | 20 | µA | VDS = 55V, VGS = 0V\u003Cbr>VDS = 55V, VGS = 0V, TJ = 125°C |\n|  |  | ––– | ––– | 250 |  |  |\n| IGSS | Gate-to-Source Forward Leakage | ––– | ––– | 200 | nA | VGS = 20V\u003Cbr>VGS = -20V |\n|  | Gate-to-Source Reverse Leakage | ––– | ––– | -200 |  |  |\n| Qg | Total Gate Charge | ––– | 76 | 110 | nC | ID = 66AVDS = 44V\u003Cbr>VGS = 10V 􀀄 |\n| Qgs | Gate-to-Source Charge | ––– | 21 | ––– |  |  |\n| Qgd | Gate-to-Drain (\"Miller\") Charge | ––– | 30 | ––– |  |  |\n| td(on) | Turn-On Delay Time | ––– | 18 | ––– | ns | VDD = 28VID = 66ARG = 6.8 Ω VGS = 10V 􀀄 |\n| tr | Rise Time | ––– | 95 | ––– |  |  |\n| td(off) | Turn-Off Delay Time | ––– | 45 | ––– |  |  |\n| tf | Fall Time | ––– | 67 | ––– |  |  |\n| LD | Internal Drain Inductance | ––– | 4.5 | ––– | nH | Between lead,\u003Cbr>6mm (0 .25in. )\u003Cbr>from package\u003Cbr>and center of die contact |\n| LS | Internal Source Inductance | ––– | 7.5 | ––– |  |  |\n| Ciss | Input Capacitance | ––– | 3450 | ––– | pF | VGS = 0V\u003Cbr>VDS = 25V\u003Cbr>ƒ = 1.0MHz |\n| Coss | Output Capacitance | ––– | 550 | ––– |  |  |\n| Crss | Reverse Transfer Capacitance | ––– | 310 | ––– |  |  |\n| Coss | Output Capa","cbCaipIJRYG1KfTa","https://ap.wps.com/l/cbCaipIJRYG1KfTa","pdf",188613,9,"English","# Features\n# Description\n# Absolute Maximum Ratings\n# Thermal Resistance\n# Electrical Characteristics\n# Source-Drain Ratings and Characteristics\n# Typical Output Characteristics","[{\"question\":\"What are the key operating and performance features of the IRF3205Z HEXFET power MOSFET?\",\"answer\":\"The datasheet lists advanced process technology, ultra-low on-resistance, a 175°C operating junction temperature, fast switching, and repetitive avalanche capability up to Tjmax.\"},{\"question\":\"What does the absolute maximum ratings section specify for IRF3205Z?\",\"answer\":\"It specifies maximum drain currents (continuous and pulsed), power dissipation, gate-to-source voltage limits, single-pulse and tested avalanche energy, avalanche current guidance, and the operating/storage temperature range.\"},{\"question\":\"Which electrical characteristics at TJ = 25°C are reported for IRF3205Z?\",\"answer\":\"It reports breakdown voltage (V(BR)DSS), on-resistance (RDS(on)), threshold voltage (VGS(th)), transconductance (gfs), leakage currents, gate charge (Qg/Qgs/Qgd), and switching timing parameters such as td(on), tr, td(off), and tf, along with capacitance values.\"}]","IRF3205Z - Automotive MOSFET HEXFET Power MOSFET - Specifications | PDF",1791809903,23,{"code":4,"msg":82,"data":99},[100,104,108,112,117,120,125,130,134,137,141],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":101,"show_sort_weight":102,"slug":103},"Story & Novel",90,"story-novel",{"id":26,"doc_module":4,"doc_module_name":25,"category_name":105,"show_sort_weight":106,"slug":107},"Literature",80,"literature",{"id":33,"doc_module":4,"doc_module_name":25,"category_name":109,"show_sort_weight":110,"slug":111},"Exam",70,"exam",{"id":113,"doc_module":4,"doc_module_name":25,"category_name":114,"show_sort_weight":115,"slug":116},5,"Comic",60,"comic",{"id":55,"doc_module":4,"doc_module_name":25,"category_name":29,"show_sort_weight":118,"slug":119},50,"technology",{"id":121,"doc_module":4,"doc_module_name":25,"category_name":122,"show_sort_weight":123,"slug":124},7,"Healthcare",40,"healthcare",{"id":126,"doc_module":4,"doc_module_name":25,"category_name":127,"show_sort_weight":128,"slug":129},8,"Research & Report",30,"research-report",{"id":91,"doc_module":4,"doc_module_name":25,"category_name":131,"show_sort_weight":132,"slug":133},"Religion & Spirituality",20,"religion-spirituality",{"id":132,"doc_module":4,"doc_module_name":25,"category_name":135,"show_sort_weight":132,"slug":136},"World Cup","world-cup",{"id":138,"doc_module":4,"doc_module_name":25,"category_name":139,"show_sort_weight":138,"slug":140},10,"Lifestyle","lifestyle",{"id":142,"doc_module":4,"doc_module_name":25,"category_name":143,"show_sort_weight":113,"slug":144},19,"General","general"]