[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562857-105":59,"doc-detail-562857-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","irf3205-hexfet-power-mosfet-datasheet","IRF3205 HEXFET Power MOSFET - Datasheet","","IRF3205 is an advanced HEXFET power MOSFET designed for efficient, reliable power switching with ultra-low on-resistance and fast switching characteristics. The datasheet provides electrical and thermal specifications including absolute maximum ratings, gate-to-source limits, breakdown voltage, on-resistance at specified test conditions, and avalanche performance. Thermal resistance values and electrical characteristics such as gate charge, switching delays, rise/fall times, capacitances, and diode-related ratings support power design and safe operating limits.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/irf3205-hexfet-power-mosfet-datasheet/562857/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/irf3205-hexfet-power-mosfet-datasheet/562857.png","ImageObject",300,407,{"name":92,"@type":93},"ahduag","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":19},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the IRF3205 key absolute maximum ratings for safe operation?","Question",{"text":112,"@type":113},"The datasheet lists limits such as continuous drain current (110A at TC=25°C, 80A at TC=100°C), power dissipation (200W at TC=25°C), gate-to-source voltage (±20V), junction/storage temperature range (-55°C to 175°C), and avalanche current/energy ratings.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What thermal resistance values are provided for the IRF3205?",{"text":117,"@type":113},"Thermal resistance parameters include junction-to-case maximum of 0.75°C/W, case-to-sink (flat, greased surface) typical of 0.50, and junction-to-ambient maximum of 62°C/W.",{"name":119,"@type":110,"acceptedAnswer":120},"Which electrical characteristics are included for switching and input/output behavior?",{"text":121,"@type":113},"Electrical characteristics cover breakdown voltage, static on-resistance, gate threshold, forward transconductance, gate charge (Qg, Qgs, Qgd), switching timing (turn-on/turn-off delays and rise/fall times), and capacitances (Ciss, Coss, Crss) with stated test conditions.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},562857,1791858261,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":19,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":39,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":46},3985747870414,"https://ap-avatar.wpscdn.com/davatar_9964176cb1d06d4a9deccf72a44ae3dc","PD-91279E  \nIRF3205  \nHEXFET® Power MOSFET  \n􀀂 Advanced Process Technology  \n􀀂 Ultra Low On-Resistance  \n􀀂 Dynamic dv/dt Rating  \n􀀂 175°C Operating Temperature  \n􀀂 Fast Switching  \n􀀂 Fully Avalanche Rated  \nDescription  \nV DSS = 55VRDS(on) = 8.0mΩ  \nID = 110A􀀁  \nAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve  \nextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.  \nThe TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.  \nAbsolute Maximum Ratings  \n\n|  | Parameter | Max. | Units |\n| --- | --- | --- | --- |\n| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 110 􀀁 | A |\n| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 80 |  |\n| IDM | Pulsed Drain Current 􀀃 | 390 |  |\n| PD @TC = 25°C | Power Dissipation | 200 | W |\n|  | Linear Derating Factor | 1.3 | W/°C |\n| VGS | Gate-to-Source Voltage | ± 20 | V |\n| IAR | Avalanche Current􀀃 | 62 | A |\n| EAR | Repetitive Avalanche Energy􀀃 | 20 | mJ |\n| dv/dt | Peak Diode Recovery dv/dt 􀀄 | 5.0 | V/ns |\n| TJ TSTG | Operating Junction and\u003Cbr>Storage Temperature Range | -55 to + 175 | °C |\n|  | Soldering Temperature, for 10 seconds | 300 (1 .6mm from case ) |  |\n|  | Mounting torque, 6-32 or M3 srew | 10 lbf•in (1 . 1N•m) |  |\n\nThermal Resistance  \n\n|  | Parameter | Typ. | Max. | Units |\n| --- | --- | --- | --- | --- |\n| R θJC | Junction-to-Case | ––– | 0.75 | °C/W |\n| R θCS | Case-to-Sink, Flat, Greased Surface | 0.50 | ––– |  |\n| R θJA | Junction-to-Ambient | ––– | 62 |  |\n\n[www.irf.com](www.irf.com) 1  \n01/25/01  \nIRF3205   \nElectrical Characteristics @ TJ = 25°C (unless otherwise specified)  \n\n|  | Parameter | Min. | Typ. | Max. | Units | Conditions |  |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- |\n| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | ––– | ––– | V | VGS = 0V, ID = 250µA |  |  |\n| ∆V(BR)DSS/∆TJ | Breakdown Voltage Temp. Coefficient | ––– | 0.057 | ––– | V/°C | Reference to 25°C, ID = 1mA |  |  |\n| RDS(on) | Static Drain-to-Source On-Resistance | ––– | ––– | 8.0 | mΩ | VGS = 10V, ID = 62A 􀀅 |  |  |\n| VGS(th) | Gate Threshold Voltage | 2.0 | ––– | 4.0 | V | V DS = VGS, ID = 250µA |  |  |\n| gfs | Forward Transconductance | 44 | ––– | ––– | S | V DS = 25V, ID = 62A􀀅 |  |  |\n| IDSS | Drain-to-Source Leakage Current | ––– | ––– | 25 | µA | V DS = 55V, VGS = 0V |  |  |\n|  |  | ––– | ––– | 250 |  | V DS = 44V, VGS = 0V, TJ = 150°C |  |  |\n| IGSS | Gate-to-Source Forward Leakage | ––– | ––– | 100 | nA | VGS = 20V |  |  |\n|  | Gate-to-Source Reverse Leakage | ––– | ––– | -100 |  | VGS = -20V |  |  |\n| Qg | Total Gate Charge | ––– | ––– | 146 | nC | ID = 62A\u003Cbr>V DS = 44V\u003Cbr>VGS = 10V, See Fig. 6 and 13 |  |  |\n| Q gs | Gate-to-Source Charge | ––– | ––– | 35 |  |  |  |  |\n| Q gd | Gate-to-Drain (\"Miller\") Charge | ––– | ––– | 54 |  |  |  |  |\n| td(on) | Turn-On Delay Time | ––– | 14 | ––– | ns | V DD = 28V\u003Cbr>ID = 62A\u003Cbr>RG = 4.5Ω\u003Cbr>VGS = 10V, See Fig. 10 􀀅 |  |  |\n| tr | Rise Time | ––– | 101 | ––– |  |  |  |  |\n| td(off) | Turn-Off Delay Time | ––– | 50 | ––– |  |  |  |  |\n| tf | Fall Time | ––– | 65 | ––– |  |  |  |  |\n| LD | Internal Drain Inductance | ––– | 4.5 | ––– | nH | Between lead,\u003Cbr>6mm (0 .25in. )\u003Cbr>from package\u003Cbr>and center of die contact | D\u003Cbr>\u003Cbr>S |  |\n| LS | Internal Source Inductance | ––– | 7.5 | ––– |  |  |  |  |\n| Ciss | Input Capacitance | ––– | 3247 | ––– | pF | VGS = 0V\u003Cbr>V DS = 25V\u003Cbr>ƒ = 1.0MHz, See Fig. 5 |  |  |\n| Coss | Output Capacitance | ––– | 781 | ––– |  |  |  |  |\n| Crss | Reverse Transfer Capacitance | ––– | 211 | ––– |  |","cbCaiaYZF0SCYllH","https://ap.wps.com/l/cbCaiaYZF0SCYllH","pdf",97120,"English","# Absolute Maximum Ratings\n# Thermal Resistance\n# Electrical Characteristics\n## Source-Drain Ratings and Characteristics\n# Notes and Test Conditions","[{\"question\":\"What are the IRF3205 key absolute maximum ratings for safe operation?\",\"answer\":\"The datasheet lists limits such as continuous drain current (110A at TC=25°C, 80A at TC=100°C), power dissipation (200W at TC=25°C), gate-to-source voltage (±20V), junction/storage temperature range (-55°C to 175°C), and avalanche current/energy ratings.\"},{\"question\":\"What thermal resistance values are provided for the IRF3205?\",\"answer\":\"Thermal resistance parameters include junction-to-case maximum of 0.75°C/W, case-to-sink (flat, greased surface) typical of 0.50, and junction-to-ambient maximum of 62°C/W.\"},{\"question\":\"Which electrical characteristics are included for switching and input/output behavior?\",\"answer\":\"Electrical characteristics cover breakdown voltage, static on-resistance, gate threshold, forward transconductance, gate charge (Qg, Qgs, Qgd), switching timing (turn-on/turn-off delays and rise/fall times), and capacitances (Ciss, Coss, Crss) with stated test conditions.\"}]","IRF3205 HEXFET Power MOSFET - Datasheet | PDF",1791809905]