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provided in the document?",{"text":71,"@type":63},"Table 2 presents maximum ratings such as VDS max 650 V, RDS(on),max 145 mΩ, Qg,typ 31 nC, ID,pulse 58 A, Eoss at 400V 3.6 µJ, and body diode diF/dt 1300 A/µs.","https://schema.org",{"og:url":32,"og:type":74,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":76,"canonical":32},"index,follow",{"doc_id":78,"site_id":7},559519,1791886736,{"code":4,"msg":81,"data":82},"success",[83,87,91,95,100,105,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":84,"show_sort_weight":85,"slug":86},"Story & 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\nPlease visit our website for pricing and availability [at](at www.hestore.hu)[ ](at www.hestore.hu)[www.hestore.hu](at www.hestore.hu).  \nIPD60R145CFD7  \nMOSFET  \n600V CoolMOSª CFD7 Power Device  \nCoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behavior CoolMOS™ CFD7 offers highest efficiency in resonant topologies. As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS™ CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS™ CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.  \nFeatures  \n• Ultra-fast body diode  \n• Low gate charge  \n• Best-in-class reverse recovery charge (Qrr)  \n• Improved MOSFET reverse diode dv/dt and diF/dt ruggedness  \n• Lowest FOM RDS(on)*Qg and RDS(on)*Eoss  \n• Best-in-class RDS(on) in SMD and THD packages  \nBenefits  \n• Excellent hard commutation ruggedness  \n• Highest reliability for resonant topologies  \n• Highest efficiency with outstanding ease-of-use / performance tradeoff  \n• Enabling increased power density solutions  \nPotential applications  \nSuiteable for Soft Switching topologies  \nOptimized for phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging  \nProduct validation  \nFully qualified according to JEDEC for Industrial Applications  \nPlease note: For MOSFET paralleling the use offerrite beads on the gate or separate totem poles is generally recommended.  \nTable 1 Key Performance Parameters  \n\n| Parameter | Value | Unit |\n| --- | --- | --- |\n| VDS @ Tj,max | 650 | V |\n| RDS(on),max | 145 | mΩ |\n| Qg,typ | 31 | nC |\n| ID,pulse | 58 | A |\n| Eoss @ 400V | 3.6 | µJ |\n| Body diode diF/dt | 1300 | A/µs |\n\n| Gate\u003Cbr>Pin 1 | Drain Pin 2 |\n| --- | --- |\n|  | |\n| Source *1: Internal body diode Pin 3 |  |\n\n| Type / Ordering Code | Package | Marking | Related Links |\n| --- | --- | --- | --- |\n| IPD60R145CFD7 | PG-TO252-3 | 60R145F7 | see Appendix A |\n\nFinal Data Sheet 1 Rev. 2.2, 2020-05-26  \n600V CoolMOSª CFD7 Power Device  \nIPD60R145CFD7   \nTable of Contents  \nDescription ............................................................................. 1  \nMaximum ratings ........................................................................ 3  \nThermal characteristics .................................................................... 4  \nElectrical characteristics ................................................................... 5  \nElectrical characteristics diagrams ........................................................... 7  \nTest Circuits ........................................................................... 11  \nPackage Outlines ....................................................................... 12  \nAppendix A ............................................................................ 13  \nRevision History ........................................................................ 14  \nTrademarks ........................................................................... 14  \nDisclaimer ............................................................................ 14  \nFinal Data Sheet 2 Rev. 2.2, 2020-05-26  \n600V CoolMOSª CFD7 Power Device  \nIPD60R145CFD7   \n1 Maximum ratings  \nat Tj = 25°C, unless otherwise specified  \nTable 2 Maximum ratings  \n\n| Parameter | Sym","cbCainDIMycoepaW","https://ap.wps.com/l/cbCainDIMycoepaW","pdf",698271,16,"English","# Description\n# Maximum ratings\n## Table 2 Maximum ratings\n# Thermal characteristics\n## Table 3 Thermal characteristics\n# Electrical characteristics\n# Electrical characteristics diagrams\n# Test Circuits\n# Package Outlines\n# Appendix A\n# Revision History\n# Trademarks\n# Disclaimer","[{\"question\":\"What soft-switching applications is the CoolMOS CFD7 optimized for?\",\"answer\":\"It targets soft switching topologies, specifically phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging.\"},{\"question\":\"What are the main electrical features claimed for CoolMOS CFD7?\",\"answer\":\"The datasheet lists an ultra-fast body diode, low gate charge, best-in-class reverse recovery charge (Qrr), and improved reverse diode dv/dt and diF/dt ruggedness, along with low FOM values involving RDS(on).\"},{\"question\":\"What key maximum ratings are provided in the document?\",\"answer\":\"Table 2 presents maximum ratings such as VDS max 650 V, RDS(on),max 145 mΩ, Qg,typ 31 nC, ID,pulse 58 A, Eoss at 400V 3.6 µJ, and body diode diF/dt 1300 A/µs.\"}]","IPD60R145CFD7 - MOSFET - 600V CoolMOS CFD7 Power Device | PDF",1791800700]