[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-detail-562980-en":59,"doc-seo-562980-105":81},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":5,"data":60},{"doc_id":61,"user_id":62,"nickname":63,"user_avatar":64,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":66,"doc_content":67,"file_id":68,"file_url":69,"file_type":70,"file_size":71,"view_count":72,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":29,"language":73,"language_code":74,"site_id":75,"html_lang":74,"table_of_contents":76,"faqs":77,"seo_title":78,"seo_description":66,"update_tm":79,"read_time":80},562980,962090883892,"pixelkiddo","https://ap-avatar.wpscdn.com/avatar/e00115db34f3e0f11b?x-image-process=image/resize,m_fixed,w_180,h_180&k=1790152879550218658","International Rectifier - HEXFET ⑧ Power MOSFET -  IRFD120 - Datasheet","International Rectifier HEXFET third-generation power MOSFET device IRFD120 datasheet detailing key performance characteristics for switching and avalanche robustness. Provides absolute maximum ratings including drain current, power dissipation, gate-source voltage limits, and avalanche energy/current. Includes thermal resistance data, source-drain electrical characteristics such as breakdown voltage, on-resistance, leakage currents, gate charge, and switching times. Also covers capacitances and body-diode parameters with specified test conditions and figure references.","# InternationalIR Rectifier\n\nIRFD120  \n# HEXFET⑧Power MOSFET\n\n● Dynamic dv/dt Rating  \n● Repetitive Avalanche Rated  \n● For Automatic Insertion  \n●End Stackable  \n·175℃ Operating Temperature  \n● Fast Switching  \n● Ease of Paralleling  \n## Description\n\nThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching,ruggedized device design,lowon-resistance and cost-effectiveness.  \nThe 4-pin DIP package is a low cost machine-insertable case style which canbe stacked in multiple combinations on standard 0.1 inch pin centers.Thedualdrain serves as a thermal link to the mounting surface for power dissipationlevels up to 1 watt.  \n## Absolute Maximum Ratings\n\n\n|  | Parameter   | Max   | Units   |\n| --- | --- | --- | --- |\n| ID@Tc=25℃   | Continuous Drain Current,VGs @10V   | 1.3   | A   |\n| lD@Tc=100℃   | Continuous Drain Current,Vss@10V   | 0.94   |  |\n| loM   | Pulsed Drain Current ①   | 10   |  |\n| Po @Tc=25℃   | Power Dissipation   | 1.3   | W   |\n|  | Linear Derating Factor   | 0.0083   | W/C   |\n| VGs   | Gate-to-Source Vottage   | ±20   | V   |\n| EAS   | Single Pulse Avalanche Energy ②   | 100   | mJ   |\n| IAR   | Avalanche Current ①   | 1.3   | A   |\n| EAR   | Repetitive Avalanche Energy ①   | 0.13   | mJ   |\n| dv/dt   | Peak Diode Recovery dv/at ③   | 5.5   | V/ns   |\n| TJ  \u003Cbr>TSTG   | Operating Junction and  \u003Cbr>Storage Temperature Range   | -55 to+175   | ℃   |\n|  | Soldering Temperature,for 10 seconds   | 300(1.6mm from case)   |  |\n\n## Thermal Resistance\n\n\n|  | Parameter   | Min.   | Typ.   | Max.   | Units   |\n| --- | --- | --- | --- | --- | --- |\n| RaJA   | Junction-to-Ambient   | 一   | 一   | 120   | ℃W   |\n\n## Source-Drain Ratings and Characteristics\n\nNotes:Notes:  \n①Repetitive rating;pulse width limited by  \nmax.junction temperature(See Figure 11)②VDD=25V,starting TJ=25℃,L=22mHRG=25Ω,IAs=2.6A (See Figure 12)  \nElectrical Characteristics @TJ=25℃(unless otherwise specified)  \n\n|  | Parameter   | Min.   | Typ.   | Max.   | Units   | Test Conditions   |\n| --- | --- | --- | --- | --- | --- | --- |\n| V(eR)DSS   | Drai-to-Source Breakdown Voltage   | 100   | 一   | 一   | V   | VGs=0V,Io=250μA   |\n| △V(BR)Dss/ATJ   | Breakdown Voltage Temp.Coefficient   | 一   | 0.13   | 一   | V/℃   | Reference to 25℃,lo=1mA   |\n| Ros/on)   | Static Drain-to-Source On-Resistance   | 二   | 二   | 0.27   | Ω   | VGs=10V,Ip=0.78A ④   |\n| VGS(h)   | Gate Threshold Voitage   | 2.0   | 二   | 4.0   | V   | Vos=Vas,lD=250μA   |\n| 9fs   | Forward Transconductance   | 0.80   | 二   | 二   | S   | Vos=50V,Ip=0.78A ④   |\n| loss   | Drain-to-Source Leakage Current   | 二   | 一   | 25   | μA   | Vos=100V,Ves=0V   |\n|  |  | 一   | 一   | 250   |  | Vos=80V,Ves=0V,Tj=150℃   |\n| lass   | Gate-to-Source Forward Leakage   | 一   | 一   | 100   | nA   | VGs=20V   |\n|  | Gate-to-Source Reverse Leakage   | 二   | 二   | -100   |  | VGs=-20V   |\n| Q   | Total Gate Charge   | 二   | 二   | 16   | nC   | lp=9.2A  \u003Cbr>Vbs=80V  \u003Cbr>VGs=10V See Fig.6 and 13④   |\n| Qgs   | Gate-to-Source Charge   | 二   | 一   | 4.4   |  |  |\n| Qgd   | Gate-to-Drain(\"Miller\")Charge   | 二   | …   | 7.7   |  |  |\n| tdion)   | Turn-On Delay Time   | 二   | 6.8   | 二   | ns   | VDD=50V  \u003Cbr>lp=9.2A  \u003Cbr>Rg=18Ω  \u003Cbr>Ro=5.2Ω See Figure 10④   |\n| t   | Rise Time   | 二   | 27   | 一   |  |  |\n| to(ofi   | Turn-Off Delay Time   | 二   | 18   | 一   |  |  |\n| tr   | Fall Time   | 一   | 17   | 一   |  |  |\n| LD   | Internal Drain Inductance   | 一   | 4.0   | 一   | nH   | Between lead,  \u003Cbr>6mm(0.25in.)  \u003Cbr>from package  \u003Cbr>and center of  \u003Cbr>die contact   |\n| Ls   | Internal Source Inductance   | 一   | 6.0   | 一   |  |  |\n| Ciss   | Input Capacitance   | 一   | 360   | 二   | pF   | VGs=0V  \u003Cbr>Vos=25V  \u003Cbr>f=1.0MHz See Figure 5   |\n| Coss   | Output Capacitance   | 二   | 150   | 二   |  |  |\n| Crss   | Reverse Transfer Capacitance   | 二   | 34   | 二   |  |  |\n\n\n|  | Parameter   | Min.   | Typ.   | Max.   | Units   | Test Conditions   |\n| --- | --- | --- | --- | ","cbCaitsUOEZ13sij","https://ap.wps.com/l/cbCaitsUOEZ13sij","pdf",184276,3,"English","en",105,"# Description\n# Absolute Maximum Ratings\n# Thermal Resistance\n# Source-Drain Ratings and Characteristics\n## Notes and Electrical Characteristics\n## Capacitance and Diode Characteristics\n## Test Conditions and Figure References","[{\"question\":\"What are the key absolute maximum ratings for IRFD120?\",\"answer\":\"The datasheet lists maximum continuous drain current at different case temperatures, pulsed drain current, power dissipation, gate-to-source voltage limits, and single/repetitive avalanche energy and current. It also provides operating junction/storage temperature and soldering temperature limits.\"},{\"question\":\"What thermal resistance information is provided?\",\"answer\":\"It includes junction-to-ambient thermal resistance with specified typical and maximum values. This supports thermal design for maintaining safe junction temperature under load.\"},{\"question\":\"Which electrical characteristics and switching parameters are highlighted?\",\"answer\":\"Electrical characteristics cover drain-to-source breakdown voltage, temperature coefficient, on-resistance, leakage currents, total gate charge, and threshold/forward transconductance. Switching-related parameters include turn-on and turn-off delay times, rise/fall times, and conditions for testing.\"}]","International Rectifier - HEXFET ⑧ Power MOSFET -  IRFD120 - Datasheet | PDF",1791810257,15,{"code":4,"msg":82,"data":83},"ok",{"site_id":75,"language":74,"slug":84,"title":65,"keywords":85,"description":66,"schema_data":86,"social_meta":139,"head_meta":141,"extra_data":143,"updated_unix":144},"international-rectifier-hexfet-power-mosfet-irfd120-datasheet","",{"@graph":87,"@context":138},[88,101,121],{"@type":89,"itemListElement":90},"BreadcrumbList",[91,95,97,99],{"item":92,"name":93,"@type":94,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":96,"name":9,"@type":94,"position":14},"https://docshare.wps.com/document/",{"item":98,"name":30,"@type":94,"position":72},"https://docshare.wps.com/document/technology/",{"item":100,"name":65,"@type":94,"position":19},"https://docshare.wps.com/document/international-rectifier-hexfet-power-mosfet-irfd120-datasheet/562980/",{"url":100,"name":65,"@type":102,"image":103,"author":108,"headline":65,"publisher":110,"fileFormat":113,"inLanguage":74,"description":66,"dateModified":114,"datePublished":115,"encodingFormat":113,"isAccessibleForFree":116,"interactionStatistic":117},"DigitalDocument",{"url":104,"@type":105,"width":106,"height":107},"https://docshare.wps.com/thumbnails/international-rectifier-hexfet-power-mosfet-irfd120-datasheet/562980.png","ImageObject",300,407,{"name":63,"@type":109},"Person",{"url":92,"name":111,"@type":112},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":118,"interactionType":119,"userInteractionCount":72},"InteractionCounter",{"@type":120},"ViewAction",{"@type":122,"mainEntity":123},"FAQPage",[124,130,134],{"name":125,"@type":126,"acceptedAnswer":127},"What are the key absolute maximum ratings for IRFD120?","Question",{"text":128,"@type":129},"The datasheet lists maximum continuous drain current at different case temperatures, pulsed drain current, power dissipation, gate-to-source voltage limits, and single/repetitive avalanche energy and current. It also provides operating junction/storage temperature and soldering temperature limits.","Answer",{"name":131,"@type":126,"acceptedAnswer":132},"What thermal resistance information is provided?",{"text":133,"@type":129},"It includes junction-to-ambient thermal resistance with specified typical and maximum values. This supports thermal design for maintaining safe junction temperature under load.",{"name":135,"@type":126,"acceptedAnswer":136},"Which electrical characteristics and switching parameters are highlighted?",{"text":137,"@type":129},"Electrical characteristics cover drain-to-source breakdown voltage, temperature coefficient, on-resistance, leakage currents, total gate charge, and threshold/forward transconductance. Switching-related parameters include turn-on and turn-off delay times, rise/fall times, and conditions for testing.","https://schema.org",{"og:url":100,"og:type":140,"og:title":65,"og:site_name":111,"og:description":66},"article",{"robots":142,"canonical":100},"index,follow",{"doc_id":61,"site_id":75},1791858286]