[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-671594-105":3,"detail-sidebar-cat-0-en-105":80,"doc-detail-671594-en":130},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":73,"head_meta":75,"extra_data":77,"updated_unix":79},105,"en","hexfet-power-mosfet-auirfs8407-automotive-grade-advanced-process-technology","HEXFET Power MOSFET AUIRFS8407 - Automotive Grade - Advanced Process Technology","","Automotive-grade HEXFET power MOSFET AUIRFS8407 designed for extremely low on-resistance per silicon area using advanced processing techniques. The specification highlights an operating junction temperature up to 175°C, fast switching performance, and improved repetitive avalanche capability. Recommended use cases include electric power steering, battery switching, start/stop micro-hybrid, heavy loads, and DC-DC applications. Key electrical ratings include 40V VDSS and low RDS(on) with Silicon-limited and package-limited drain current 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makes the AUIRFS8407 suitable for automotive use?","Question",{"text":62,"@type":63},"It is specifically designed for automotive applications with advanced processing to achieve very low on-resistance, plus a 175°C operating junction temperature rating and qualified automotive suitability.","Answer",{"name":65,"@type":60,"acceptedAnswer":66},"What are the main application areas listed for this MOSFET?",{"text":67,"@type":63},"Electric power steering (EPS), battery switch, start/stop micro hybrid, heavy loads, and DC-DC applications are explicitly listed.",{"name":69,"@type":60,"acceptedAnswer":70},"What key limitations are provided by the Absolute Maximum Ratings section?",{"text":71,"@type":63},"The document provides stress/limit guidance for continuous and pulsed drain currents, maximum power dissipation, gate-to-source voltage, junction and storage temperature range, and soldering temperature duration.","https://schema.org",{"og:url":32,"og:type":74,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":76,"canonical":32},"index,follow",{"doc_id":78,"site_id":7},671594,1793577527,{"code":4,"msg":81,"data":82},"success",[83,87,91,95,100,104,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":84,"show_sort_weight":85,"slug":86},"Story & 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On-Resistance  \n􀀂 175°C Operating Temperature  \n􀀂 Fast Switching  \n􀀂 Repetitive Avalanche Allowed up to Tjmax  \n􀀂 Lead-Free, RoHS Compliant  \n􀀀 Automotive Qualified *  \nDescription  \nSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design area 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.  \nApplications  \n􀀂 Electric Power Steering (EPS)  \n􀀂 Battery Switch  \n􀀂 Start/Stop Micro Hybrid  \n􀀂 Heavy Loads  \n􀀂 DC-DC Applications  \nHEXFET􀀂 Power MOSFET  \n| VDSS | 40V |\n| --- | --- |\n| RDS(on) typ.(SMD version) max. | 1.4mΩ |\n|  | 1.8mΩ |\n| ID (Silicon Limited) | 250A􀀀 |\n| ID (Package Limited) | 195A |\n\n\n| \u003Cbr>TO-220ABAUIRFB8407 | \u003Cbr>D2 Pak\u003Cbr>AUIRFS8407 | \u003Cbr>AUIRFSL8407 |\n| --- | --- | --- |\n\n\n| G | D | S |\n| --- | --- | --- |\n| Gate | Drain | Source |\n\nOrdering Information  \n\n| Base part number | Package Type | Standard Pack |  | Complete Part |\n| --- | --- | --- | --- | --- |\n|  |  | Form | Quantity | Number |\n| AUIRFB8407 | TO-220 | Tube | 50 | AUIRFB8407 |\n| AUIRFSL8407 | TO-262 | Tube | 50 | AUIRFSL8407 |\n| AUIRFS8407 | D2Pak | Tube | 50 | AUIRFS8407 |\n| AUIRFS8407 | D2Pak | Tape and Reel Left | 800 | AUIRFS8407TRL |\n\nAbsolute Maximum Ratings  \nStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  \n\n| Symbol | Parameter | Max. | Units |\n| --- | --- | --- | --- |\n| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 250􀀄 | A |\n| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 |  |\n| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | 195 |  |\n| IDM | Pulsed Drain Current 􀀀 | 1000􀀅 |  |\n| PD @TC = 25°C | Maximum Power Dissipation | 230 | W |\n|  | Linear Derating Factor | 1.5 | W/°C |\n| VGS | Gate-to-Source Voltage | ± 20 | V |\n| TJ TSTG | Operating Junction and\u003Cbr>Storage Temperature Range | -55 to + 175 | °C |\n|  | Soldering Temperature, for 10 seconds (1 .6mm from case) | 300 |  |\n|  | Mounting torque, 6-32 or M3 screw | 10lbf 􀀆 in (1 . 1N 􀀆 m) |  |\n\nAvalanche Characteristics  \n\n| EAS (Thermally limited) | Single Pulse Avalanche Energy 􀀂 | 350 | mJ |\n| --- | --- | --- | --- |\n| EAS (tested) | Single Pulse Avalanche Energy Tested Value 􀀃􀀂 | 500 |  |\n| IAR | Avalanche Current􀀃􀀀 | See Fig. 14, 15, 22a, 22b | A |\n| EAR | Repetitive Avalanche Energy 􀀀 |  | mJ |\n\nHEXFET® is a registered trademark of International Rectifier.  \n*Qualification standards can be found at [http://www.irf.com/](http://www.irf.com/)  \n\n| 􀀄 | 􀀅􀀅􀀅􀀆􀀇􀀈􀀉􀀆􀀊􀀋􀀌 􀀂 􀀍􀀎􀀄􀀏 􀀐􀀑􀀒􀀓􀀈􀀑􀀔􀀒􀀇􀀋􀀑􀀔􀀕 􀀖􀀓􀀊􀀒􀀇􀀉􀀇􀀓􀀈 | 􀀗􀀘􀀙􀀌􀀇􀀒 􀀚􀀔􀀒􀀔􀀛􀀜􀀓􀀓􀀒 􀀝􀀓􀀓􀀞􀀙􀀔􀀊 | !􀀈􀀇􀀕 􀀎􀀄\" 􀀍􀀎􀀄􀀏 |\n| --- | --- | --- | --- |\n|  |  |  |  |\n\n􀀂􀀃􀀄􀀅􀀆􀀇􀀎􀀌􀀎􀀌􀀍􀀈􀀉􀀊􀀋   \nStatic @ TJ = 25°C (unless otherwise specified)  \n\n| Symbol | Parameter | Min. | Typ. | Max. | Units | Conditions |\n| --- | --- | --- | --- | --- | --- | --- |\n| V(BR)DSS | Drain-to-Source Breakdown Voltage | 40 | ––– | ––– | V | VGS = 0V, ID = 250μA |\n| ΔV(BR)DSS/ΔTJ | Breakdown Voltage Temp. Coefficient | ––– | 0.029 | ––– | V/°C | Reference to 25°C, ID = 1mA􀀆 |\n| RDS(on) SMD | Static Drain-to-Source On-Resistance | ––– | 1.4 | 1.8 | mΩ | VGS = 10","cbCaivX5CUTQzLjC","https://ap.wps.com/l/cbCaivX5CUTQzLjC","pdf",349120,15,"English","# Features\n## Applications\n## Electrical Ratings and Characteristics\n## Ordering Information\n## Absolute Maximum Ratings\n## Avalanche Characteristics","[{\"question\":\"What makes the AUIRFS8407 suitable for automotive use?\",\"answer\":\"It is specifically designed for automotive applications with advanced processing to achieve very low on-resistance, plus a 175°C operating junction temperature rating and qualified automotive suitability.\"},{\"question\":\"What are the main application areas listed for this MOSFET?\",\"answer\":\"Electric power steering (EPS), battery switch, start/stop micro hybrid, heavy loads, and DC-DC applications are explicitly listed.\"},{\"question\":\"What key limitations are provided by the Absolute Maximum Ratings section?\",\"answer\":\"The document provides stress/limit guidance for continuous and pulsed drain currents, maximum power dissipation, gate-to-source voltage, junction and storage temperature range, and soldering temperature duration.\"}]","HEXFET Power MOSFET AUIRFS8407 - Automotive Grade - Advanced Process Technology | PDF",38]