[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-561080-105":59,"doc-detail-561080-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","fqp7n80c-qfet-tm-features","FQP7N80C - QFET TM - Features","","FQP7N80C/FQPF7N80C are 800V N-channel enhancement-mode power MOSFETs using Fairchild planar stripe DMOS (QFET) technology. The devices are designed to reduce on-state resistance, improve switching performance, and tolerate high-energy pulses in avalanche and commutation modes, making them suitable for high-efficiency switch-mode power supplies. Key parameters include 6.6A drain current, low gate charge and low Crss, fast switching capability, and 100% avalanche testing, with comprehensive ratings and electrical characteristics provided.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/fqp7n80c-qfet-tm-features/561080/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/fqp7n80c-qfet-tm-features/561080.png","ImageObject",300,407,{"name":92,"@type":93},"Stanley","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-21","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":29},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What technology is used for FQP7N80C/FQPF7N80C MOSFETs?","Question",{"text":112,"@type":113},"They are produced using Fairchild’s proprietary planar stripe DMOS technology under the QFET TM platform.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What are the key features targeting low losses and fast switching?",{"text":117,"@type":113},"The devices emphasize minimized on-state resistance, superior switching performance, low gate charge (typical 27 nC), low Crss (typical 10 pF), and fast switching, with 100% avalanche tested performance.",{"name":119,"@type":110,"acceptedAnswer":120},"What is the main absolute maximum rating for drain-source voltage and drain current?",{"text":121,"@type":113},"The drain-source voltage rating V DSS is 800 V, and the continuous drain current is 6.6 A (at TC = 25°C) for both FQP7N80C and FQPF7N80C.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},561080,1791858276,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":29,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":52,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},2336477405376,"https://ap-avatar.wpscdn.com/davatar_29158cc5080c5b710cf443261637dec0","FQP7N80C/FQPF7N80C  \n©2003 Fairchild Semiconductor Corporation Rev. A, April 2003  \n\n| \u003Cbr>\u003Cbr>FQP7N80C/FQPF7N80C 800V N-Channel MOSFET\u003Cbr>General Description\u003Cbr>These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.\u003Cbr>This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. |  | QFET TM\u003Cbr>Features\u003Cbr>• 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V\u003Cbr>• Low gate charge ( typical 27 nC)\u003Cbr>• Low Crss ( typical 10 pF)\u003Cbr>• Fast switching\u003Cbr>• 100% avalanche tested\u003Cbr>• Improved dv/dt capability |  |  |  |\n| --- | --- | --- | --- | --- | --- |\n| \u003Cbr>\u003Cbr>TO-220 FQP Series\u003Cbr>\u003Cbr>\u003Cbr>\u003Cbr>G D S\u003Cbr>TO-220FFQPF Series\u003Cbr>G!\u003Cbr>|  |  |  |  |  |\n| Absolute Maximum Ratings TC = 25°C unless otherwise noted\u003Cbr>Symbol Parameter FQP7N80C FQPF7N80C Units V DSS Drain-Source Voltage 800 V ID Drain Current -Continuous (TC = 25°C)\u003Cbr>-Continuous (TC = 100°C) 6.6 6.6 * A 4.2 4.2 * A IDM Drain Current -Pulsed (Note 1) 26.4 26.4 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ IAR Avalanche Current (Note 1) 6.6 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C)\u003Cbr>-Derate above 25°C 167 56 W 1.33 0.44 W/°C TJ , TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 \" from case for 5 seconds 300 °C\u003Cbr>* Drain current limited by maximum junction temperature.\u003Cbr>Thermal Characteristics |  |  |  |  |  |\n| Symbol | Parameter |  | FQP7N80C | FQPF7N80C | Units |\n| R θJC | Thermal Resistance, Junction-to-Case |  | 0.75 | 2.25 | °C/W |\n| R θJS | Thermal Resistance, Case-to-Sink Typ. |  | 0.5 | -- | °C/W |\n| R θJA | Thermal Resistance, Junction-to-Ambient |  | 62.5 | 62.5 | °C/W |\n|  |  |  |  |  |  |\n\nFQP7N80C/FQPF7N80C  \n©2003 Fairchild Semiconductor Corporation Rev. A, April 2003  \nElectrical Characteristics TC = 25°C unless otherwise noted  \n\n| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |\n| --- | --- | --- | --- | --- | --- | --- |\n\nOff Characteristics  \n\n| BV DSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 µA | 800 | -- | -- | V |\n| --- | --- | --- | --- | --- | --- | --- |\n| ∆BV DSS\u003Cbr>/ ∆TJ | Breakdown Voltage Temperature Coefficient | ID = 250 µA, Referenced to 25°C | -- | 0.93 | -- | V/°C |\n| IDSS | Zero Gate Voltage Drain Current | V DS = 800 V, VGS = 0 V | -- | -- | 10 | µA |\n|  |  | V DS = 640 V, TC = 125°C | -- | -- | 100 | µA |\n| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30 V, V DS = 0 V | -- | -- | 100 | nA |\n| IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30 V, V DS = 0 V | -- | -- | -100 | nA |\n\nOn Characteristics  \n\n| VGS(th) | Gate Threshold Voltage | V DS = VGS, ID = 250 µA | 3.0 | -- | 5.0 | V |\n| --- | --- | --- | --- | --- | --- | --- |\n| RDS(on) | Static Drain-Source\u003Cbr>On-Resistance | VGS = 10 V, ID = 3.3 A | -- | 1.57 | 1.9 | Ω |\n| gFS | Forward Transconductance | V DS = 50 V, ID = 3.3 A (Note 4) | -- | 5.5 | -- | S |\n\nDynamic Characteristics  \n\n| Ciss | Input Capacitance | V DS = 25 V, VGS = 0 V, f = 1.0 MHz | -- | 1290 | 1680 | pF |\n| --- | --- | --- | --- | --- | --- | --- |\n| Coss | Output Capacitance |  | -- | 120 | 155 | pF |\n| Crss | Reverse Transfer Capacitance |  | -- | 10 | 13 | pF |\n\nSwitching Characteristics  \n\n| td(on) | Turn-On Delay Time | V DD = 400 V, ID = 6.6 A, RG = 25 Ω\u003Cbr>(Note 4, 5) | -- | 35 | 80 | ns |\n| --- | --- | --- | --- | --- | --- | --- |\n| tr | Turn-On Rise Time |  | -- | 100 | 210 | ns |\n| td(off) | Turn-Off Delay Time |  | -- | 50 | 110 | ns |\n| t f | Turn-Off Fall Time |  | -- | 60 | 130 | ns |\n| Qg | Total Gate Charge | V DS = 640 V, ID = 6.6 A, VGS = 10 V\u003Cbr>(Note 4, 5) | -- | 27 |","cbCaimTzfJza8p6B","https://ap.wps.com/l/cbCaimTzfJza8p6B","pdf",868638,"English","# General Description\n## Features\n## Absolute Maximum Ratings\n## Electrical Characteristics\n### Off Characteristics\n### On Characteristics\n### Dynamic Characteristics\n### Switching Characteristics\n### Drain-Source Diode Characteristics and Maximum Ratings\n## Notes\n## Typical Characteristics","[{\"question\":\"What technology is used for FQP7N80C/FQPF7N80C MOSFETs?\",\"answer\":\"They are produced using Fairchild’s proprietary planar stripe DMOS technology under the QFET TM platform.\"},{\"question\":\"What are the key features targeting low losses and fast switching?\",\"answer\":\"The devices emphasize minimized on-state resistance, superior switching performance, low gate charge (typical 27 nC), low Crss (typical 10 pF), and fast switching, with 100% avalanche tested performance.\"},{\"question\":\"What is the main absolute maximum rating for drain-source voltage and drain current?\",\"answer\":\"The drain-source voltage rating V DSS is 800 V, and the continuous drain current is 6.6 A (at TC = 25°C) for both FQP7N80C and FQPF7N80C.\"}]","FQP7N80C - QFET TM - Features | PDF",1791804950,25]