[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-148786-105":59,"doc-detail-148786-en":131},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":124,"head_meta":126,"extra_data":128,"updated_unix":130},105,"en","epitaxial-integration-and-properties-of-srruo3-on-silicon-research-report","Epitaxial integration and properties of SrRuO3 on silicon - research report","","Integration of SrRuO3, a widely used oxide electrode material, with silicon is investigated using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film shows a rocking-curve FWHM of 0.01, room-temperature resistivity of 250 μΩ·cm, residual resistivity ratio of 11, and a paramagnetic-to-ferromagnetic transition temperature near 160 K. Structural, electrical, and magnetic properties are benchmarked favorably against prior SrRuO3-on-silicon results and compared with films grown on SrTiO3 single crystals.",{"@graph":69,"@context":123},[70,84,106],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":40,"@type":76,"position":81},"https://docshare.wps.com/document/research-report/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/epitaxial-integration-and-properties-of-srruo3-on-silicon-research-report/148786/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/epitaxial-integration-and-properties-of-srruo3-on-silicon-research-report/148786.png","ImageObject",300,407,{"name":92,"@type":93},"Oliver","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-30","2026-08-26",true,{"@type":102,"interactionType":103,"userInteractionCount":105},"InteractionCounter",{"@type":104},"ViewAction",11,{"@type":107,"mainEntity":108},"FAQPage",[109,115,119],{"name":110,"@type":111,"acceptedAnswer":112},"How is SrRuO3 integrated onto silicon in this study?","Question",{"text":113,"@type":114},"SrRuO3 is grown on silicon by molecular-beam epitaxy with an SrTiO3 buffer layer to enable epitaxial integration.","Answer",{"name":116,"@type":111,"acceptedAnswer":117},"What key structural, electrical, and magnetic properties are reported for the SrRuO3 film?",{"text":118,"@type":114},"The film exhibits a rocking-curve FWHM of 0.01, room-temperature resistivity of 250 μΩ·cm, a residual resistivity ratio of 11, and a paramagnetic-to-ferromagnetic transition temperature around 160 K.",{"name":120,"@type":111,"acceptedAnswer":121},"Why is direct epitaxial growth of SrRuO3 on silicon difficult?",{"text":122,"@type":114},"Oxidative growth conditions promote formation of an amorphous SiO2 layer, which can hinder epitaxial growth and lead to polycrystalline SrRuO3.","https://schema.org",{"og:url":83,"og:type":125,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":127,"canonical":83},"index,follow",{"doc_id":129,"site_id":62},148786,1787786101,{"code":4,"msg":5,"data":132},{"doc_id":129,"user_id":133,"nickname":92,"user_avatar":134,"doc_module":4,"category_id":39,"category_name":40,"doc_title":65,"doc_description":67,"doc_content":135,"file_id":136,"file_url":137,"file_type":138,"file_size":139,"view_count":105,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":140,"language":141,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":142,"faqs":143,"seo_title":144,"seo_description":67,"update_tm":130,"read_time":36,"preview_page_count":4},8796095461610,"https://ap-avatar.wpscdn.com/davatar_276721f389ce27ea32af1340a28f341c","Epitaxial integration and properties of SrRuO 3 on silicon  \nCite as: APL Mater. 6, 086101 (2018); [https://doi.org/10.1063/1.5041940](https://doi.org/10.1063/1.5041940)  \n[Submitted: 28 May 2018](Submitted: 28 May 2018) • Accepted: 08 July 2018 • Published Online: 02 August 2018  \nZhe Wang, Hari P. Nair,  Gabriela C. Correa, et al.  \nARTICLES YOU MAY BE INTERESTED IN  \nSynthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios APL Materials 6, 046101 (2018); [https://doi.org/10.1063/1.5023477](https://doi.org/10.1063/1.5023477)  \nStructural, electrical, and magnetic properties of SrRuO3 thin films  \nApplied Physics Letters 104, 081608 (2014); [https://doi.org/10.1063/1.4866775](https://doi.org/10.1063/1.4866775)  \nStructure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure  \nJournal of Applied Physics 120, 235108 (2016); [https://doi.org/10.1063/1.4972477](https://doi.org/10.1063/1.4972477)  \nAPL Mater. 6, 086101 (2018); [https://doi.org/10.1063/1.5041940](https://doi.org/10.1063/1.5041940) 6, 086101  \n© 2018 Author(s) .  \nAPL MATERIALS 6, 086101 (2018)  \nEpitaxial integration and properties of SrRuO3 on silicon  \nZhe Wang,1,a Hari P. Nair,2,a Gabriela C. Correa,2 Jaewoo Jeong,3  \nKiyoung Lee,4 Eun Sun Kim,5 Ariel Seidner H. ,2 Chang Seung Lee,4  \nHan Jin Lim,5 David A. Muller,1,6 and Darrell G. Schlom2,6,b  \n1 School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA  \n2 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA  \n3 New Memory Technology Lab, Semiconductor R&D Center, Samsung Electronics, Milpitas, California 95053, USA  \n4 Platform Technology Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea  \n5 Samsung Semiconductor R&D Center 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea  \n6 Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA (Received 28 May 2018; accepted 8 July 2018; published online 2 August 2018)  \nWe report the integration of SrRuO 3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO 3 buffer layer. The resulting SrRuO 3 film has a rocking curve full width at half maximum of 0.01􀀎 , a resistivity at room temperature of 250 􀀖􀀊 cm, a residual resistivity ratio (􀀚300 K 􀀎􀀚4 K ) of 11, and a paramagnetic-to-ferromagnetic transition temperature of 􀀘 160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO 3 films on silicon and rival those of epitaxial SrRuO 3 films produced directly on SrTiO 3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO 3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon. © 2018 Author(s).  \nAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license ( [http://creativecommons.org/licenses/by/4.0/](http://creativecommons.org/licenses/by/4.0/)).  \n[https://doi.org/10.1063/1.5041940](https://doi.org/10.1063/1.5041940)  \nSrRuO3 is one of the most widely used oxide electrode materials in epitaxial oxide heterostructures and related devices.1 This utility arises from its excellent thermochemical stability,2,3 high conductivity at room temperature, and especially because of its close lattice match (SrRuO 3 has apseudocubic lattice parameter of 3 .93 Å) with many functional perovskite oxides. These include multiferroics such as BiFeO3 (pseudocubic lattice parameter of 3 .96 Å),4 ferroelectrics such as BaTiO3 (in-plane lattice parameter of 3 .99 Å),5 superconductors such as YBa 2Cu3 O7-x (in-plane pseudotetragonal lattice parameter of 3 .","cbCaiesIzgRJkCGW","https://ap.wps.com/l/cbCaiesIzgRJkCGW","pdf",8953931,16,"English","# Background and Motivation\n## SrRuO3 as an oxide electrode and device enabler\n## Challenges of integrating SrRuO3 with silicon\n# Growth Approach\n## Molecular-beam epitaxy and SrTiO3 buffer layer\n# Results and Properties\n## Structural characteristics (rocking curve)\n## Electrical transport properties\n## Magnetic behavior and transition temperature\n# Significance and Applications","[{\"question\":\"How is SrRuO3 integrated onto silicon in this study?\",\"answer\":\"SrRuO3 is grown on silicon by molecular-beam epitaxy with an SrTiO3 buffer layer to enable epitaxial integration.\"},{\"question\":\"What key structural, electrical, and magnetic properties are reported for the SrRuO3 film?\",\"answer\":\"The film exhibits a rocking-curve FWHM of 0.01, room-temperature resistivity of 250 μΩ·cm, a residual resistivity ratio of 11, and a paramagnetic-to-ferromagnetic transition temperature around 160 K.\"},{\"question\":\"Why is direct epitaxial growth of SrRuO3 on silicon difficult?\",\"answer\":\"Oxidative growth conditions promote formation of an amorphous SiO2 layer, which can hinder epitaxial growth and lead to polycrystalline SrRuO3.\"}]","Epitaxial integration and properties of SrRuO3 on silicon - research report | PDF"]