[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562853-105":59,"doc-detail-562853-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","dual-enhancement-mode-mosfet-apm4052du4-datasheet","Dual Enhancement Mode MOSFET - APM4052DU4 - Datasheet","","Dual Enhancement Mode MOSFET featuring N-channel 40V/7.5A and P-channel -40V/-6A devices in TO-252-4 package, with specified RDS(ON) values at VGS=10V/5V and -10V/-5V. The document provides lead-free/RoHS “Green” compliance notes, ordering and marking information, and absolute maximum ratings for voltage, current, temperature, and power dissipation. Electrical and dynamic characteristics include breakdown voltage, threshold, leakage, on-resistance, diode behavior, reverse recovery, gate charge, capacitances, and switching timing.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/dual-enhancement-mode-mosfet-apm4052du4-datasheet/562853/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/dual-enhancement-mode-mosfet-apm4052du4-datasheet/562853.png","ImageObject",300,407,{"name":92,"@type":93},"ahduag","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":19},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the main electrical limits for APM4052DU4?","Question",{"text":112,"@type":113},"Absolute maximum ratings list VDSS of 40V for N-channel and -40V for P-channel, continuous drain current of 7.5A (N) and -6A (P), and maximum junction temperature TJ of 150°C. Storage temperature range is -55 to 150°C and power dissipation is specified for TA=25°C.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"How is on-state resistance specified for N-Channel and P-Channel?",{"text":117,"@type":113},"RDS(ON) is given as a typical value at VGS=10V and VGS=5V for the N-channel, and at VGS=-10V and VGS=-5V for the P-channel. Additional test-condition values and min/typ/max ranges are provided in the electrical characteristics tables.",{"name":119,"@type":110,"acceptedAnswer":120},"What dynamic parameters and switching-related metrics are included?",{"text":121,"@type":113},"The document includes diode reverse recovery time (trr), reverse recovery charge (Qrr), gate charge (Qg, Qgs, Qgd), gate resistance (RG), input/output capacitances (Ciss, Coss), reverse transfer capacitance (Crss), and turn-on delay/rise timing such as td(ON) and tr.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},562853,1791850779,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":19,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":139,"language":140,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":141,"faqs":142,"seo_title":143,"seo_description":67,"update_tm":144,"read_time":145},3985747870414,"https://ap-avatar.wpscdn.com/davatar_9964176cb1d06d4a9deccf72a44ae3dc","APM4052DU4  \nDual Enhancement Mode MOSFET ( N-and P-Channel)  \nFeatures Pin Description  \n· N-Channel 40V/7.5A,  \nRDS(ON)= 30m Ω (typ.) @ VGS= 10V  \nRDS(ON)= 46m Ω (typ.) @ VGS= 5V  \n· P-Channel  \n-40V/-6A,  \nTop View of TO-252-4  \nRDS(ON)= 40m Ω (typ.) @ VGS= -10V  \nRDS(ON)= 52m Ω (typ.) @ VGS= -5V  \n· Super High Dense Cell Design  \n· Reliable and Rugged  \n· Lead Free and Green Devices Available (RoHS Compliant)  \nApplications  \n(2)  \nG1  \n(3)  \nD1  \n(3)  \nD2  \nS1 S2  \n(1) (4)  \n· Power Management in LCD monitor/TV N MOS P MOS Ordering and Marking Information  \n\n| APM4052D \u003Cbr>\u003Cbr>|  | Assembly Material Handling Code Temperature Range Package Code | Package Code U4 : TO-252-4\u003Cbr>Operating Junction Temperature Range\u003Cbr>C : -55 to 150 oC Handling Code\u003Cbr>TR : Tape & Reel Assembly Material\u003Cbr>G : Halogen and Lead Free Device |\n| --- | --- | --- | --- |\n| APM4052D U4 : | \u003Cbr>APM4052DXXXXX |  | XXXXX-Date Code |\n\nNote: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish ; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free ( RoHS compliant) and halogen free ( Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight) .  \nANPEC reserves the right to make changes to improve reliability or manufact urability without notice , and advise customers to obtain the latest version of relevant information to verify before placing orders .  \nCopyright ANPEC Electronics Corp. Rev . A .3 -Jan . , 2009  \n[1](1 www.anpec.com.tw)[ www.anpec.com.tw](1 www.anpec.com.tw)  \nAPM4052DU4  \nAbsolute Maximum Ratings (TA = 25°C unless otherwise noted)  \n\n| Symbol | Parameter |  | Rating |  | Unit |\n| --- | --- | --- | --- | --- | --- |\n|  |  |  | N Channel | P Channel |  |\n| VDSS | Drain-Source Voltage |  | 40 | -40 | V |\n| VGSS | Gate-Source Voltage |  | ± 20 | ± 20 |  |\n| ID a | Continuous Drain Current | TC=25°C | 7.5 | -6 | A |\n| IDM a | Pulsed Drain Current | TC=25°C | 30 | -25 |  |\n| IS a | Diode Continuous Forward Current | TC=25°C | 7.5 | -6 | A |\n| TJ | Maximum Junction Temperature |  | 150 |  | °C |\n| TSTG | Storage Temperature Range |  | -55 to 150 |  |  |\n| PD | Power Dissipation | TC=25°C | 2.5 |  | W |\n|  |  | TC=100°C | 1 |  |  |\n| RθJC | Thermal Resistance-Junction to Case |  | 5 |  | °C/W |\n| RθJA a | Thermal Resistance-Junction to Ambient |  | 50 |  |  |\n\nNote : Surface Mounted on 1in2 pad area, t ≤ 10sec.  \nElectrical Characteristics (TA = 25°C unless otherwise noted)  \n\n| Symbol | Parameter | Test Conditions |  |  | APM4052DU4 |  |  | Unit |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- |\n|  |  |  |  |  | Min. | Typ. | Max. |  |\n| Static Characteristics |  |  |  |  |  |  |  |  |\n| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA |  | N-Ch | 40 | - | - | V |\n|  |  | VGS=0V, IDS=-250μA |  | P-Ch | -40 | - | - |  |\n| IDSS | Zero Gate Voltage Drain Current | VDS=32V, VGS=0V |  | N-Ch | - | - | 1 | μA |\n|  |  |  | TJ=85 °C |  | - | - | 30 |  |\n|  |  | VDS=-32V, VGS=0V |  | P-Ch | - | - | -1 |  |\n|  |  |  | TJ=85 °C |  | - | - | -30 |  |\n| VGS(th) | Gate Threshold Voltage | VDS=VGS , IDS=250μA |  | N-Ch | 1.3 | 2 | 2.5 | V |\n|  |  | VDS=VGS , IDS=-250μA |  | P-Ch | -1.3 | -2 | -2.5 |  |\n| IGSS | Gate Leakage Current | VGS=± 20V, VDS=0V |  | N-Ch | - | - | ± 100 | nA |\n|  |  | VGS=± 20V, VDS=0V |  | P-Ch | - | - | ± 100 |  |\n| RDS(ON) a | Drain-Source On-State Resistance | VGS=10V, IDS=7 . 5A |  | N-Ch | - | 30 | 38 | mΩ |\n|  |  | VGS=-10V, IDS=-6A |  | P-Ch | - | 40 | 50 |  |\n|  |  | VGS=5V, IDS=5A |  | N-Ch | - | 46 | 62 |  |\n|  |  | VGS=-5V, IDS=-3.5A |  | P-Ch | - | 52 | 73 |  |\n\nCopyright ANPEC Electronics Corp . Rev . A .3 -Jan . , 2009  \n[2](2 www.anpec.com.tw)[ www.anpec.com.tw](2 www.anpec.com.tw)  \nAPM4052DU4  \nElect","cbCaicsUXJPA5VJB","https://ap.wps.com/l/cbCaicsUXJPA5VJB","pdf",429168,13,"English","# Features\n# Pin Description and Applications\n# Ordering and Marking Information\n# Note on Lead-Free / Green Compliance\n# Absolute Maximum Ratings\n# Electrical Characteristics (Static)\n# Electrical Characteristics (Cont. - Diode, Gate Charge, Dynamic)","[{\"question\":\"What are the main electrical limits for APM4052DU4?\",\"answer\":\"Absolute maximum ratings list VDSS of 40V for N-channel and -40V for P-channel, continuous drain current of 7.5A (N) and -6A (P), and maximum junction temperature TJ of 150°C. Storage temperature range is -55 to 150°C and power dissipation is specified for TA=25°C.\"},{\"question\":\"How is on-state resistance specified for N-Channel and P-Channel?\",\"answer\":\"RDS(ON) is given as a typical value at VGS=10V and VGS=5V for the N-channel, and at VGS=-10V and VGS=-5V for the P-channel. Additional test-condition values and min/typ/max ranges are provided in the electrical characteristics tables.\"},{\"question\":\"What dynamic parameters and switching-related metrics are included?\",\"answer\":\"The document includes diode reverse recovery time (trr), reverse recovery charge (Qrr), gate charge (Qg, Qgs, Qgd), gate resistance (RG), input/output capacitances (Ciss, Coss), reverse transfer capacitance (Crss), and turn-on delay/rise timing such as td(ON) and tr.\"}]","Dual Enhancement Mode MOSFET - APM4052DU4 - Datasheet | PDF",1791809895,33]