[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-560897-105":59,"doc-detail-560897-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","buh515d-high-voltage-fast-switching-npn-power-transistor-electrical-and-mechanical-data","BUH515D - High Voltage Fast-Switching NPN Power Transistor - Electrical and Mechanical Data","","BUH515D is a high-voltage fast-switching NPN power transistor built with Multiepitaxial Mesa technology and a hollow emitter structure to improve switching speed. The device targets horizontal deflection circuits in color TVs and monitors and includes an integrated freewheeling diode in a fully insulated ISOWATT package. The document lists absolute maximum ratings, thermal and electrical characteristics at defined test conditions, and base drive guidance for minimizing switch-off dissipation and improving fall time. Mechanical dimensions and mounting notes are also provided.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":35,"@type":76,"position":81},"https://docshare.wps.com/document/healthcare/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/buh515d-high-voltage-fast-switching-npn-power-transistor-electrical-and-mechanical-data/560897/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/buh515d-high-voltage-fast-switching-npn-power-transistor-electrical-and-mechanical-data/560897.png","ImageObject",300,407,{"name":92,"@type":93},"Terk","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-13","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":24},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What applications are BUH515D designed for?","Question",{"text":112,"@type":113},"BUH515D is designed for horizontal deflection circuits in televisions and monitors, particularly for color TV applications.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What are the key absolute maximum ratings for BUH515D?",{"text":117,"@type":113},"It specifies maximum collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, peak currents, total dissipation, insulation withstand voltage, and a storage temperature range.",{"name":119,"@type":110,"acceptedAnswer":120},"How should base drive be handled to reduce losses and optimize fall time?",{"text":121,"@type":113},"Provide adequate positive base current IB1 to ensure saturation at low gain conditions, and use negative base current IB2 during the retrace phase. Curves define total power losses and fall time as functions of IB2 to select optimum negative drive.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},560897,1791852612,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":34,"category_name":35,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":24,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":39,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":46},1099525198933,"https://ap-avatar.wpscdn.com/davatar_155a257f0dc6eb9ab79c44ca47cae57d","| \u003Cbr>® | BUH515D |\n| --- | --- |\n| HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |  |\n\nSTMicroelectronics PREFERRED  \n■  \nSALESTYPE  \nHIGH VOLTAGE CAPABILITY  \n■  \n■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED  \n■  \nFREEWHEELING DIODE  \nAPPLICATIONS:  \nHORIZONTAL DEFLECTION FOR COLOUR  \n■  \nTVS  \nDESCRIPTION  \nThe BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.  \nThe BUH series is designed for use in horizontal deflection circuits in televisions and monitors.  \n1  \nISOWATT218  \nINTERNAL SCHEMATIC DIAGRAM  \nR Typ. = 12 Ω  \nABSOLUTE MAXIMUM RATINGS  \n\n| Symbol | Parameter | Value | Unit |\n| --- | --- | --- | --- |\n| VCBO | Collector-Base Voltage (IE = 0) | 1500 | V |\n| V CEO | Collector-Emitter Voltage (IB = 0) | 700 | V |\n| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |\n| IC | Collector Current | 8 | A |\n| I CM | Collector Peak Current (tp \u003C 5 ms) | 15 | A |\n| IB | Base Current | 5 | A |\n| IBM | Base Peak Current (tp \u003C 5 ms) | 8 | A |\n| Ptot | Total Dissipation at Tc = 25 oC | 50 | W |\n| Visol | Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink | 2500 | V |\n| Tstg | Storage Temperature | -65 to 150 | oC |\n\nJuly 2002 1/7  \nTHERMAL DATA  \n\n| Rthj-case | Thermal Resistance Junction-case Max | 2.5 | oC/W |\n| --- | --- | --- | --- |\n\nELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  \n\n| Symbol | Parameter | Test Conditions | Min. | Typ. | Max . | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n| ICES | Collector Cut-off Current (V BE = 0) | VCE = 1300 V\u003Cbr>VCE = 1500 V\u003Cbr>VCE = 1500 V Tj = 125 oC |  |  | 10\u003Cbr>0.2\u003Cbr>2 | µA\u003Cbr>mA\u003Cbr>mA |\n| IEBO | Emitter Cut-off Current (IC = 0) | VEB = 5 V |  |  | 200 | mA |\n| VCE(sat) ∗ | Collector-Emitter Saturation Voltage | IC = 5 A IB = 1.25 A |  |  | 1.5 | V |\n| V BE(sat) ∗ | Base-Emitter\u003Cbr>Saturation Voltage | IC = 5 A IB = 1.25 A |  |  | 1.3 | V |\n| h FE ∗ | DC Current Gain | IC = 5 A V CE = 5 V\u003Cbr>IC = 5 A V CE = 5 V Tj = 100 oC | 5 3 |  | 10 |  |\n| ts\u003Cbr>tf | RESISTIVE LOAD Storage Time\u003Cbr>Fall Time | V CC = 400 V IC = 5 AIB1 = 1.5 A IB2 = -2.5 A |  | 2.4\u003Cbr>170 | 3.6\u003Cbr>260 | µs\u003Cbr>ns |\n| ts\u003Cbr>tf | INDUCTIVE LOAD Storage Time\u003Cbr>Fall Time | IC = 5 A f = 15625 Hz IB1 = 1.25 A IB2 = -2.5 AVceflyback = 1050 sin􀃦􀃧􀃨~~ ~~1π0 106􀃶􀃸􀃷 t V |  | 3.5\u003Cbr>450 |  | µs\u003Cbr>ns |\n| VF | Diode Forward Voltage | IF = 5 A |  |  | 2 | V |\n\n∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  \nSafe Operating Area Thermal Impedance  \n2/7  \nDerating Curve  \nCollector Emitter Saturation Voltage  \nPower Losses at 16 KHz  \nDC Current Gain  \nBase Emitter Saturation Voltage  \nSwitching Time Inductive Load at 16KHz (see figure 2)  \n3/7  \nSwitching Time Resistive Load  \nBASE DRIVE INFORMATION  \nIn order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase) . On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase) . Most of the dissipation, especially in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz frequencies for choosing the optimum negative drive. The test circuit is illustrated in fig. 1.  \nInductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this avoid any tailing phenomenon in the collector current.  \nThe values of L and C are calculated from the following equations:  \n12 L (IC)2 = 12 C (VCEfly)2  \nω = 2 πf = √􀁠1L􀁠􀁠C􀁠  \nWhere IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillati","cbCaiknZ4hekC4QE","https://ap.wps.com/l/cbCaiknZ4hekC4QE","pdf",236024,"English","# Absolute Maximum Ratings\n## Thermal Data\n## Electrical Characteristics\n## Base Drive Information\n## Switching Test Circuit and Waveforms\n## ISOWATT218 Mechanical Data","[{\"question\":\"What applications are BUH515D designed for?\",\"answer\":\"BUH515D is designed for horizontal deflection circuits in televisions and monitors, particularly for color TV applications.\"},{\"question\":\"What are the key absolute maximum ratings for BUH515D?\",\"answer\":\"It specifies maximum collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, peak currents, total dissipation, insulation withstand voltage, and a storage temperature range.\"},{\"question\":\"How should base drive be handled to reduce losses and optimize fall time?\",\"answer\":\"Provide adequate positive base current IB1 to ensure saturation at low gain conditions, and use negative base current IB2 during the retrace phase. Curves define total power losses and fall time as functions of IB2 to select optimum negative drive.\"}]","BUH515D - High Voltage Fast-Switching NPN Power Transistor - Electrical and Mechanical Data | PDF",1791804428]