[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-561108-105":59,"doc-detail-561108-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","buh1015hi-high-voltage-fast-switching-npn-power-transistor","BUH1015HI High Voltage Fast-Switching NPN Power Transistor","","BUH1015HI is a high-voltage, fast-switching NPN power transistor from STMicroelectronics, built with multiepitaxial Mesa technology and a hollow emitter structure to enhance switching speed. It is designed for horizontal deflection circuits in high-end colour TVs and 19-inch monitors, offering high voltage capability above 1500 V and very high switching speed. The datasheet provides absolute maximum ratings, thermal data, and key electrical characteristics, including saturation parameters, current gains, and switching timing for resistive and inductive loads, plus drive-base guidance and safe operating area references.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/buh1015hi-high-voltage-fast-switching-npn-power-transistor/561108/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/buh1015hi-high-voltage-fast-switching-npn-power-transistor/561108.png","ImageObject",300,407,{"name":92,"@type":93},"Stanford","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-20","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":39},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What applications is the BUH1015HI transistor intended for?","Question",{"text":112,"@type":113},"It is intended for horizontal deflection circuits in high-end colour TVs and 19-inch monitors.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What is the stated high-voltage capability of BUH1015HI?",{"text":117,"@type":113},"The datasheet specifies collector-base/collector-emitter capabilities of up to 1500 V (with separate listed limits for other bias conditions).",{"name":119,"@type":110,"acceptedAnswer":120},"How does the document recommend driving the transistor to manage switching losses?",{"text":121,"@type":113},"Provide adequate positive base current IB1 to saturate the switch at the lowest gain conditions, and use negative base current IB2 during turn-off to minimize power losses and fall time, reducing junction temperature.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},561108,1791840465,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":39,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":34,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},2336477552062,"https://ap-avatar.wpscdn.com/davatar_994ba38a5ba835b3df7d355c54d3ed8d","􀁛  \nBUH1015HI  \nHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  \nSTMicroelectronics PREFERRED  \n■  \nSALESTYPE  \n■ HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED  \n■  \n■ FULLY INSULATED PACKAGE (U. L. COMPLIANT) FOR EASY MOUNTING  \nAPPLICATIONS:  \nHORIZONTAL DEFLECTION FOR  \n■  \nHIGH-END COLOUR TV AND 19”  \nMONITORS  \n3  \n21  \nDESCRIPTION ISOWATT218  \nThe BUH1015HI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.  \nThe BUH series is designed for use in horizontal  \ndeflection circuits in televisionsand monitors. INTERNAL SCHEMATIC DIAGRAM  \nABSOLUTE MAXIMUM RATINGS  \nSymbol  \nVCBO  \nVCEO  \nVEBO  \nIC  \nI CM  \nIB  \nIBM  \nPtot Visol  \nTs tg  \nTj  \nApril 2002  \nParameter  \nCollector-Base Voltage (IE = 0)  \nCollector-Emitter Voltage (IB = 0)  \nEmitter-Base Voltage (IC = 0)  \nCollector Current  \nCollector Peak Current (tp \u003C 5 ms) Base Current  \nBase Peak Current (tp \u003C 5 ms) Total Dissipation at Tc = 25 oC  \nInsulation Withstand Voltage (RMS) from All Three Leads to Exerna l Heatsink  \nStorage Temperature  \nMax . Operating Junction Temperature  \nValue  \n1500  \n700  \n10  \n14  \n18  \n8  \n11  \n70  \n2500  \n-65 to 150 150  \nUnit  \nV  \nV  \nV  \nA  \nA  \nA  \nA  \nW  \nV  \noC  \noC  \n1/7  \nBUH1015HI  \nTHERMAL DATA  \nRthj-case Thermal Resistance Junction-case Max 1.8 oC/W  \nELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  \nSymbol Parameter Test Conditions Min . Typ . Max. Unit  \nICES Collector Cut-off VCE = 1500 V 0.2 mA  \nCurrent (V BE = 0) VCE = 1500 V Tj = 125 oC 2 mA  \nIEBO Emitter Cut-off Current VEB = 5 V 100 µA  \n(IC = 0)  \nV CEO(sus )∗ Collector-Emitter IC = 100 mA 700 V  \nSustaining Voltage  \n(IB = 0)  \nVEBO Emitter-Base Voltage IE = 10 mA 10 V  \n(IC = 0)  \nVCE(sat )∗ Collector-Emitter IC = 10 A IB = 2 A 1.5 V  \nSaturation Voltage  \nV BE(sat)∗ Base-Emitter IC = 10 A IB = 2 A 1.5 V  \nSaturation Voltage  \nh FE∗ DC Current Gain IC = 10 A VCE = 5 V 7 10 14  \nIC = 10 A VCE = 5 V Tj = 100 oC 5  \nRESISTIVE LOAD VCC = 400 V IC = 10 A  \nts Storage Time IB1 = 2 A IB2 = -6 A 1.5 µs  \ntf Fall Time 110 ns  \nINDUCTIVE LOAD IC = 10 A f = 31250 Hz  \nts Storage Time IB1 = 2 A IB2 = -6 A 4 µs  \ntf Fall Time Vceflyback = 1200 sin 􀁕􀁙􀁔 106􀁎􀀼􀁍 t V 220 ns  \nINDUCTIVE LOAD IC = 6 A f = 64 KHz  \nts Storage Time IB1 = 1 A 3.7 µs  \ntf Fall Time V beoff = - 2 V 200 ns  \nVceflyback = 1100 sin 􀁔􀁙􀁕 106􀁎􀀼􀁍 t V  \n∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  \n2/7  \nBUH1015HI  \nSafe Operating Area  \nDerating Curve  \nCollector Emitter Saturation Voltage  \nThermal Impedance  \nDC Current Gain  \nBase Emitter Saturation Voltage  \n3/7  \nBUH1015HI  \nPower Losses at 64 KHz Switching Time Inductive Load at 64KHz  \n(see figure 2)  \nReverse Biased SOA  \nBASE DRIVE INFORMATION  \nIn order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase) . On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase) . Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. Anew set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the  \noptimum drive. The test circuit is illustrated in figure 1 .  \nThe values of L and C are calculated from the following equations:  \n1  \n2  \nω  \nL (IC)2 = 1 C (VCEfly)2 2  \n= 2 πf =  \n1  \n√􀁠L􀁠C􀁠􀁠  \nWhere IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.  \n4/7  \nBUH1015HI  \nFigure 1: Inductive Load Switching Test Circuit.  \nFigure 2: Switching Waveforms in a Deflection Circuit  \n5/7  \nBUH1015HI  \nISOWATT218 MECHANICAL DATA  \nDIM.  \nA  \nC  \nD  \nD1  \nE  \nF  \nF2  \nF3  \nG  \nH  \nL  \nL1  \nL2  \nL3  ","cbCaid4VnPUKHJn6","https://ap.wps.com/l/cbCaid4VnPUKHJn6","pdf",76774,"English","# Key Features\n## Applications and Internal Structure\n# Specifications\n## Absolute Maximum Ratings\n## Thermal Data\n## Electrical Characteristics\n# Switching and Drive Information\n## Base Drive Guidance\n## Switching Test Circuit and Waveforms\n# Mechanical Data\n## Package Dimensions and Mounting Notes\n# Legal and Product Notices","[{\"question\":\"What applications is the BUH1015HI transistor intended for?\",\"answer\":\"It is intended for horizontal deflection circuits in high-end colour TVs and 19-inch monitors.\"},{\"question\":\"What is the stated high-voltage capability of BUH1015HI?\",\"answer\":\"The datasheet specifies collector-base/collector-emitter capabilities of up to 1500 V (with separate listed limits for other bias conditions).\"},{\"question\":\"How does the document recommend driving the transistor to manage switching losses?\",\"answer\":\"Provide adequate positive base current IB1 to saturate the switch at the lowest gain conditions, and use negative base current IB2 during turn-off to minimize power losses and fall time, reducing junction temperature.\"}]","BUH1015HI High Voltage Fast-Switching NPN Power Transistor | PDF",1791805024,18]