[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-561088-105":59,"doc-detail-561088-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","aod454-n-channel-enhancement-mode-field-effect-transistor-datasheet","AOD454 N-Channel - Enhancement Mode Field Effect Transistor - Datasheet","","AOD454 is an N-channel enhancement mode field effect transistor designed with advanced trench technology to deliver low on-state resistance and low gate charge for efficient switching. The device supports applications such as PWM control, load switching, and general-purpose power switching. Key ratings include VDS up to 40 V, continuous drain current up to 12 A, and RDS(ON) under 33 mΩ at VGS=10 V and below 47 mΩ at VGS=4.5 V. Electrical, dynamic, absolute maximum, and thermal characteristics are provided for design and reliability assessment.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/aod454-n-channel-enhancement-mode-field-effect-transistor-datasheet/561088/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/aod454-n-channel-enhancement-mode-field-effect-transistor-datasheet/561088.png","ImageObject",300,407,{"name":92,"@type":93},"Stanley","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-21","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":39},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the main electrical ratings of the AOD454?","Question",{"text":112,"@type":113},"The datasheet lists VDS up to 40 V and continuous drain current up to 12 A. It also provides RDS(ON) targets of \u003C33 mΩ at VGS=10 V and \u003C47 mΩ at VGS=4.5 V.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"Which operating modes and applications are supported?",{"text":117,"@type":113},"The device is described as suitable for PWM, load switching, and general purpose applications, leveraging low gate charge and low RDS(ON).",{"name":119,"@type":110,"acceptedAnswer":120},"How are gate charge and switching behavior characterized?",{"text":121,"@type":113},"The document includes dynamic and switching parameters such as total gate charge (Qg), gate-source charge (Qgs), gate-drain charge (Qgd), and turn-on/turn-off delays and rise/fall times, along with body diode reverse recovery data (trr, Qrr).","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},561088,1791841336,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":39,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":29,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},2336477405376,"https://ap-avatar.wpscdn.com/davatar_29158cc5080c5b710cf443261637dec0","| AOD454 N-Channel | Enhancement Mode Field Effect Transistor |  |  |  |  |  | |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n| General Description\u003Cbr>The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.\u003Cbr>-RoHS Compliant\u003Cbr>-Halogen Free* |  |  |  |  | Features\u003Cbr>VDS (V) = 40V\u003Cbr>ID = 12 A (VGS = 10V)\u003Cbr>RDS(ON) \u003C 33 mΩ (VGS = 10V)\u003Cbr>RDS(ON) \u003C 47 mΩ (VGS = 4.5V)\u003Cbr>100% UIS Tested!\u003Cbr>100% Rg Tested! |  |  |\n| TO-252\u003Cbr>|  |  |  |  | G | |  |\n| Absolute Maximum Ratings TA=25°C unless otherwise noted |  |  |  |  |  |  |  |\n| Parameter |  |  |  | Symbol | Maximum |  | Units |\n| Drain-Source Voltage |  |  |  | VDS | 40 |  | V |\n| Gate-Source Voltage |  |  |  | VGS | ±20 |  | V |\n| Continuous Drain Current G |  | TC=25°C |  | ID | 12 |  | A |\n|  |  | TC=100°C |  |  | 10 |  |  |\n| Pulsed Drain Current C |  |  |  | IDM | 30 |  |  |\n| C\u003Cbr>Avalanche Current |  |  |  | IAR | 12 |  | A |\n| Repetitive avalanche energy L=0 . 1mH |  |  | C | EAR | 20 |  | mJ |\n| Power Dissipation B |  | TC=25°C |  | PD | 50 |  | W |\n|  |  | TC=100°C |  |  | 25 |  |  |\n| Power Dissipation A |  | TA=25°C |  | PDSM | 2 |  | W |\n|  |  | TA=70°C |  |  | 1.3 |  |  |\n| Junction and Storage Temperature Range |  |  |  | TJ , TSTG | -55 to 175 |  | °C |\n\n\n| Thermal Characteristics |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- |\n| Parameter |  | Symbol | Typ Max |  | Units |\n| Maximum Junction-to-Ambient A | t ≤ 10s | RθJA | 17.4 | 30 | °C/W |\n| Maximum Junction-to-Ambient A | Steady-State |  | 50 | 60 | °C/W |\n| Maximum Junction-to-Case B | Steady-State | RθJC | 2.3 | 3 | °C/W |\n\nAlpha & Omega Semiconductor, [Ltd. www.aosmd.com](Ltd. www.aosmd.com)  \nElectrical Characteristics (TJ=25°C unless otherwise noted)  \n\n| Symbol | Parameter | Conditions |  | Min | Typ | Max | Units |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n| STATIC PARAMETERS |  |  |  |  |  |  |  |\n| BVDSS | Drain-Source Breakdown Voltage | ID=10mA, VGS=0V |  | 40 |  |  | V |\n| IDSS | Zero Gate Voltage Drain Current | VDS=32V, VGS=0V |  |  |  | 1 | µA |\n|  |  |  | TJ=55°C |  |  | 5 |  |\n| IGSS | Gate-Body leakage current | VDS=0V, VGS=±20V |  |  |  | ±100 | nA |\n| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA |  | 1.8 | 2.3 | 3 | V |\n| ID(ON) | On state drain current | VGS=10V, VDS=5V |  | 30 |  |  | A |\n| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=12A |  |  | 25 | 33 | mΩ |\n|  |  |  | TJ=125°C |  | 39 | 52 |  |\n|  |  | VGS=4 .5V, ID=6A |  |  | 34 | 47 | mΩ |\n| gFS | Forward Transconductance | VDS=5V, ID=12A |  |  | 25 |  | S |\n| VSD | Diode Forward Voltage | IS=1A, VGS=0V |  |  | 0.76 | 1 | V |\n| IS | Maximum Body-Diode Continuous Current |  |  |  |  | 12 | A |\n| DYNAMIC PARAMETERS |  |  |  |  |  |  |  |\n| Ciss | Input Capacitance | VGS=0V, VDS=20V, f=1MHz |  |  | 404 | 500 | pF |\n| Coss | Output Capacitance |  |  |  | 95 | 150 | pF |\n| Crss | Reverse Transfer Capacitance |  |  |  | 37 | 60 | pF |\n| Rg | Gate resistance | VGS=0V, VDS=0V, f=1MHz |  |  | 2.7 |  | Ω |\n| SWITCHING PARAMETERS |  |  |  |  |  |  |  |\n| Qg(10V) | Total Gate Charge | VGS=10V, VDS=20V, ID=12A |  |  | 9.2 |  | nC |\n| Qg(4.5V) | Total Gate Charge |  |  |  | 4.5 |  | nC |\n| Qgs | Gate Source Charge |  |  |  | 1.6 |  | nC |\n| Qgd | Gate Drain Charge |  |  |  | 2.6 |  | nC |\n| tD(on) | Turn-On DelayTime | VGS=10V, VDS=20V, RL=1 .7Ω , RGEN=3Ω |  |  | 3.5 |  | ns |\n| tr | Turn-On Rise Time |  |  |  | 6 |  | ns |\n| tD(off) | Turn-Off DelayTime |  |  |  | 13.2 |  | ns |\n| tf | Turn-Off Fall Time |  |  |  | 3.5 |  | ns |\n| trr | Body Diode Reverse Recovery Time | IF=12A, dI/dt=100A/µs |  |  | 22.9 |  | ns |\n| Qrr | Body Diode Reverse Recovery Charge | IF=12A, dI/dt=100A/µs |  |  | 18.3 |  | nC |\n\nA: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDS","cbCaibz1adIsD6qs","https://ap.wps.com/l/cbCaibz1adIsD6qs","pdf",305262,"English","# General Description\n# Features\n# Absolute Maximum Ratings\n# Thermal Characteristics\n# Electrical Characteristics\n## Static Parameters\n## Dynamic Parameters\n## Switching Parameters\n# Notes and Test Conditions\n# Typical Electrical and Thermal Characteristic","[{\"question\":\"What are the main electrical ratings of the AOD454?\",\"answer\":\"The datasheet lists VDS up to 40 V and continuous drain current up to 12 A. It also provides RDS(ON) targets of \\u003c33 mΩ at VGS=10 V and \\u003c47 mΩ at VGS=4.5 V.\"},{\"question\":\"Which operating modes and applications are supported?\",\"answer\":\"The device is described as suitable for PWM, load switching, and general purpose applications, leveraging low gate charge and low RDS(ON).\"},{\"question\":\"How are gate charge and switching behavior characterized?\",\"answer\":\"The document includes dynamic and switching parameters such as total gate charge (Qg), gate-source charge (Qgs), gate-drain charge (Qgd), and turn-on/turn-off delays and rise/fall times, along with body diode reverse recovery data (trr, Qrr).\"}]","AOD454 N-Channel - Enhancement Mode Field Effect Transistor - Datasheet | PDF",1791804978,15]