[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-563098-105":59,"doc-detail-563098-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","ao4606-30v-complementary-mosfet-datasheet","AO4606 - 30V Complementary MOSFET - Datasheet","","AO4606 is a complementary MOSFET family device built with advanced trench technology, designed to deliver low RDS(ON) and low gate charge for efficient switching. The datasheet summarizes key limits and operating conditions, including drain-source voltage ratings of 30V for the N-channel and -30V for the P-channel, continuous drain current up to 6A/-6.5A depending on VGS, and absolute maximum ratings for voltage, current, avalanche, and temperature. It also provides thermal characteristics and detailed N-channel electrical, static, dynamic, and switching parameters such as capacitances, gate charge, and switching delays.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/ao4606-30v-complementary-mosfet-datasheet/563098/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/ao4606-30v-complementary-mosfet-datasheet/563098.png","ImageObject",300,407,{"name":92,"@type":93},"moss~","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-15","2026-10-12",true,{"@type":102,"interactionType":103,"userInteractionCount":29},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What is the AO4606 voltage rating for the N-channel and P-channel?","Question",{"text":112,"@type":113},"The datasheet lists VDS as 30V for the N-channel and -30V for the P-channel.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What are the main conduction and resistance performance figures for AO4606?",{"text":117,"@type":113},"It specifies continuous drain current up to 6A at VGS=10V and low RDS(ON), with typical values shown for different VGS levels.",{"name":119,"@type":110,"acceptedAnswer":120},"Which parameters in the datasheet cover switching behavior and gate driving?",{"text":121,"@type":113},"It includes dynamic and switching parameters such as input/output capacitances, total gate charge (Qg), gate resistance (Rg), and turn-on/turn-off delays and rise/fall times.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},563098,1791817013,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":29,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":44,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":143,"read_time":144},962090895452,"https://ap-avatar.wpscdn.com/davatar_a8503ba1806abce46bf441b54a3ca4cd","| \u003Cbr>\u003Cbr>AO4606\u003Cbr>30VComplementary MOSFET\u003Cbr>|  |  |  |  |  |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |\n| General Description\u003Cbr>The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. |  |  |  | Product Summary\u003Cbr>N-Channel P-Channel\u003Cbr>VDS= 30V -30V\u003Cbr>ID= 6A (VGS=10V) -6.5A (VGS=-10V)\u003Cbr>RDS(ON) RDS(ON)\u003Cbr>\u003C 30mΩ (VGS=10V) \u003C 28mΩ (VGS=-10V)\u003Cbr>\u003C 42mΩ (VGS=4 .5V) \u003C 44mΩ (VGS=-4 .5V)\u003Cbr>100% UIS Tested 100% UIS Tested\u003Cbr>100% Rg Tested 100% Rg Tested\u003Cbr>|  |  |  |  |  |  |\n| SOIC-8\u003Cbr>|  |  | S2\u003Cbr>G2\u003Cbr>S1\u003Cbr>G1 |  | Top View\u003Cbr>1  8 2 7 3 6 4 5 | D2\u003Cbr>D2\u003Cbr>D1\u003Cbr>D1 | G2 | | G1 | |\n|  |  |  |  |  |  |  | n-channel p |  |  |  |\n| Absolute Maximum Ratings TA=25°C unless otherwise noted |  |  |  |  |  |  |  |  |  |  |\n| Parameter |  | Symbol |  | Max n-channel |  |  | Max p-channel |  | Units |  |\n| Drain-Source Voltage |  | VDS |  | 30 |  |  | -30 |  | V |  |\n| Gate-Source Voltage |  | VGS |  | ±20 |  |  | ±20 |  | V |  |\n| Continuous Drain Current | TA=25°C | ID |  | 6 |  |  | -6.5 |  | A |  |\n|  | TA=70°C |  |  | 5 |  |  | -5.3 |  |  |  |\n| Pulsed Drain Current C |  | IDM |  | 30 |  |  | -30 |  |  |  |\n| C\u003Cbr>Avalanche Current |  | IAS, IAR |  | 10 |  |  | 23 |  | A |  |\n| Avalanche energy L=0 . 1mH C |  | EAS, EAR |  | 5 |  |  | 26 |  | mJ |  |\n| Power Dissipation B | TA=25°C | PD |  | 2 |  |  | 2 |  | W |  |\n|  | TA=70°C |  |  | 1.3 |  |  | 1.3 |  |  |  |\n| Junction and Storage Temperature Range |  | TJ , TSTG |  | -55 to 150 |  |  |  |  | °C |  |\n\n\n| Thermal Characteristics |  |  |  |  |  |\n| --- | --- | --- | --- | --- | --- |\n| Parameter |  | Symbol | Typ | Max | Units |\n| Maximum Junction-to-Ambient A | t ≤ 10s | RqJA | 48 | 62.5 | °C/W |\n| Maximum Junction-to-Ambient A D | Steady-State |  | 74 | 90 | °C/W |\n| Maximum Junction-to-Lead | Steady-State | RqJL | 32 | 40 | °C/W |\n\nRev 10 . 1: August 2023 [www.aosmd.com](www.aosmd.com) Page 1 of 9  \nAO4606  \nN-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)  \n\n| Symbol | Parameter | Conditions |  | Min | Typ | Max | Units |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n| STATIC PARAMETERS |  |  |  |  |  |  |  |\n| BVDSS | Drain-Source Breakdown Voltage | ID=250mA, VGS=0V |  | 30 |  |  | V |\n| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V |  |  |  | 1 | mA |\n|  |  |  | TJ=55°C |  |  | 5 |  |\n| IGSS | Gate-Body leakage current | VDS=0V, VGS=±20V |  |  |  | ±100 | nA |\n| VGS(th) | Gate Threshold Voltage | VDS=VGS ID=250mA |  | 1.2 | 1.8 | 2.4 | V |\n| ID(ON) | On state drain current | VGS=10V, VDS=5V |  | 30 |  |  | A |\n| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=6A | TJ=125°C |  | 25 | 30 | mW |\n|  |  |  |  |  | 40 | 48 |  |\n|  |  | VGS=4 .5V, ID=5A |  |  | 33.5 | 42 | mW |\n| gFS | Forward Transconductance | VDS=5V, ID=6A |  |  | 15 |  | S |\n| VSD | Diode Forward Voltage | IS=1A,VGS=0V |  |  | 0.76 | 1 | V |\n| IS | Maximum Body-Diode Continuous Current |  |  |  |  | 2.5 | A |\n| DYNAMIC PARAMETERS |  |  |  |  |  |  |  |\n| Ciss | Input Capacitance | VGS=0V, VDS=15V, f=1MHz |  | 200 | 255 | 310 | pF |\n| Coss | Output Capacitance |  |  | 30 | 45 | 60 | pF |\n| Crss | Reverse Transfer Capacitance |  |  | 20 | 35 | 50 | pF |\n| Rg | Gate resistance | VGS=0V, VDS=0V, f=1MHz |  | 1.6 | 3.25 | 4.9 | W |\n| SWITCHING PARAMETERS |  |  |  |  |  |  |  |\n| Qg(10V) | Total Gate Charge | VGS=10V, VDS=15V, ID=6A |  | 4 | 5.2 | 6 | nC |\n| Qg(4.5V) | Total Gate Charge |  |  | 2 | 2.55 | 3 | nC |\n| Qgs | Gate Source Charge |  |  |  | 0.85 |  | nC |\n| Qgd | Gate Drain Charge |  |  |  | 1.3 |  | nC |\n| tD(on) | Turn-On DelayTime | VGS=10V, VDS=15V, RL=2 .5W , RGEN=3W |  |  | 4.5 |  | ns |\n| tr | Turn-On Rise Time |  |  |  | 2.5 |  | ns |\n| tD(off) | Turn-Off DelayTime |  |  |  | 14.5 |  | ns |\n| tf | Turn-Off Fall Time |  |  |  | 3.5 |  | ns |\n| trr","cbCaimsInaYiB6cp","https://ap.wps.com/l/cbCaimsInaYiB6cp","pdf",516474,"English","# General Description\n# Product Summary\n# Absolute Maximum Ratings\n# Thermal Characteristics\n# N-Channel Electrical Characteristics\n## Static Parameters\n## Dynamic Parameters\n## Switching Parameters\n# Notes and Application Disclaimers","[{\"question\":\"What is the AO4606 voltage rating for the N-channel and P-channel?\",\"answer\":\"The datasheet lists VDS as 30V for the N-channel and -30V for the P-channel.\"},{\"question\":\"What are the main conduction and resistance performance figures for AO4606?\",\"answer\":\"It specifies continuous drain current up to 6A at VGS=10V and low RDS(ON), with typical values shown for different VGS levels.\"},{\"question\":\"Which parameters in the datasheet cover switching behavior and gate driving?\",\"answer\":\"It includes dynamic and switching parameters such as input/output capacitances, total gate charge (Qg), gate resistance (Rg), and turn-on/turn-off delays and rise/fall times.\"}]","AO4606 - 30V Complementary MOSFET - Datasheet | PDF",1791810540,23]