[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-201506-105":59,"doc-detail-201506-en":131},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":124,"head_meta":126,"extra_data":128,"updated_unix":130},105,"en","600v-coolmos-p6-power-transistor-product-datasheet","600V CoolMOS P6 Power Transistor - Product Datasheet","","600V CoolMOS P6 power MOSFET product overview describing the superjunction (SJ) based CoolMOS technology and its intended benefits. Key selling points include increased MOSFET dv/dt ruggedness, extremely low switching and conduction losses via low FOM Rdson·Qg and Eoss, and very high commutation ruggedness. Guidance covers ease of use/drive, Pb-free and halogen-free construction, typical applications in PFC and hard-/resonant switching PWM stages, plus industrial JEDEC qualification details.",{"@graph":69,"@context":123},[70,84,106],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/600v-coolmos-p6-power-transistor-product-datasheet/201506/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/600v-coolmos-p6-power-transistor-product-datasheet/201506.png","ImageObject",300,407,{"name":92,"@type":93},"wps_ap_test_251126_0180","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-10-15","2026-09-04",true,{"@type":102,"interactionType":103,"userInteractionCount":105},"InteractionCounter",{"@type":104},"ViewAction",12,{"@type":107,"mainEntity":108},"FAQPage",[109,115,119],{"name":110,"@type":111,"acceptedAnswer":112},"What are the main performance benefits of the 600V CoolMOS P6 MOSFETs?","Question",{"text":113,"@type":114},"They provide increased dv/dt ruggedness, extremely low switching and conduction losses due to low FOM Rdson·Qg and Eoss, and very high commutation ruggedness while remaining easy to use/drive.","Answer",{"name":116,"@type":111,"acceptedAnswer":117},"Which application areas are listed for these devices?",{"text":118,"@type":114},"Applications include PFC stages, hard switching PWM stages, and resonant switching stages, such as those used in PC Silverbox, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS.",{"name":120,"@type":111,"acceptedAnswer":121},"What guidance is given for paralleling MOSFETs?",{"text":122,"@type":114},"When using MOSFET paralleling, the document recommends using ferrite beads on the gate or using separate totem poles.","https://schema.org",{"og:url":83,"og:type":125,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":127,"canonical":83},"index,follow",{"doc_id":129,"site_id":62},201506,1788534827,{"code":4,"msg":5,"data":132},{"doc_id":129,"user_id":133,"nickname":92,"user_avatar":134,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":135,"file_id":136,"file_url":137,"file_type":138,"file_size":139,"view_count":105,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":140,"language":141,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":142,"faqs":143,"seo_title":144,"seo_description":67,"update_tm":130,"read_time":145},8796095027276,"https://avatar.qwps.com/avatar/d3BzX2FwX3Rlc3RfMjUxMTI2XzAxODA=","IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6  \nMOSFET  \n600V CoolMOSª P6 Power Transistor  \nCoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.  \nFeatures  \n• Increased MOSFET dv/dt ruggedness  \n• Extremely low losses due to very low FOM Rdson*Qg and Eoss  \n• Very high commutation ruggedness  \n• Easy to use/drive  \n• Pb-free plating, Halogen free mold compound  \nPotential applications  \nPFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.  \nProduct validation  \nFully qualified according to JEDEC for Industrial Applications  \nPlease note: For MOSFET paralleling the use offerrite beads on the gate or separate totem poles is generally recommended.  \nTable 1 Key Performance Parameters  \n\n| Parameter | Value | Unit |\n| --- | --- | --- |\n| VDS @ Tj,max | 650 | V |\n| RDS(on),max | 380 | mΩ |\n| Qg.typ | 19 | nC |\n| ID,pulse | 29 | A |\n| Eoss@400V | 2.7 | µJ |\n| Body diode di/dt | 500 | A/µs |\n\n\n| | | |\n| --- | --- | --- |\n| PG-TO 220 FP\u003Cbr>|  |  |\n\n\n| Gate\u003Cbr>Pin 1 | Drain |  |\n| --- | --- | --- |\n|  | |  |\n| *1: Internal body diode |  | Source Pin 3 |\n\n| Type / Ordering Code | Package | Marking | Related Links |\n| --- | --- | --- | --- |\n| IPB60R380P6 | PG-TO263-3 | 6R380P6 | see Appendix A |\n| IPP60R380P6 | PG-TO220-3 |  |  |\n| IPD60R380P6 | PG-TO252-3 |  |  |\n| IPA60R380P6 | PG-TO220 FullPAK |  |  |\n\nFinal Data Sheet 1 Rev. 2.4, 2020-06-09  \n600V CoolMOSª P6 Power Transistor  \nIPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6   \nTable of Contents  \nDescription ............................................................................. 1  \nMaximum ratings ........................................................................ 3  \nThermal characteristics .................................................................... 4  \nElectrical characteristics ................................................................... 5  \nElectrical characteristics diagrams ........................................................... 7  \nTest Circuits ........................................................................... 12  \nPackage Outlines ....................................................................... 13  \nAppendix A ............................................................................ 17  \nRevision History ........................................................................ 18  \nTrademarks ........................................................................... 18  \nDisclaimer ............................................................................ 18  \nFinal Data Sheet 2 Rev. 2.4, 2020-06-09  \n600V CoolMOSª P6 Power Transistor  \nIPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6   \n1 Maximum ratings  \nat Tj = 25°C, unless otherwise specified  \nTable 2 Maximum ratings  \n\n| Parameter | Symbol | Values |  |  | Unit | Note / Test Condition |\n| --- | --- | --- | --- | --- | --- | --- |\n|  |  | Min. | Typ. | Max. |  |  |\n| Continuous drain current1) | ID | -\u003Cbr>- | -\u003Cbr>- | 10.6\u003Cbr>6.7 | A | TC=25°C\u003Cbr>TC=100°C |\n| Pulsed drain current2) | ID,pulse | - | - | 29 | A | TC=25°C |\n| Avalanche energy, single pulse | EAS | - | - | 210 | mJ | ID=1 .8A; VDD=50V; see table 10 |\n| Avalanche energy, repetitive | EAR | - | - | 0.32 | mJ | ID=1 .8A; VDD=50V; see table 10 |\n| Avalanche current, repetitive | IAR | - | - | 1.8 | A | - |\n| MOSFET dv/dt ruggedness | dv/dt | - | - | 100 | V/ns | VDS=0 ...400V |\n| Gate source voltage (static) | VGS | -20 | - | 20 | V | static; |\n| Gate sour","cbCaihgHpU3i0a0V","https://ap.wps.com/l/cbCaihgHpU3i0a0V","pdf",2601950,18,"English","# Description\n# Maximum ratings\n# Thermal characteristics\n# Electrical characteristics\n## Electrical characteristics diagrams\n# Test Circuits\n# Package Outlines\n# Appendix A\n# Revision History\n# Trademarks\n# Disclaimer","[{\"question\":\"What are the main performance benefits of the 600V CoolMOS P6 MOSFETs?\",\"answer\":\"They provide increased dv/dt ruggedness, extremely low switching and conduction losses due to low FOM Rdson·Qg and Eoss, and very high commutation ruggedness while remaining easy to use/drive.\"},{\"question\":\"Which application areas are listed for these devices?\",\"answer\":\"Applications include PFC stages, hard switching PWM stages, and resonant switching stages, such as those used in PC Silverbox, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS.\"},{\"question\":\"What guidance is given for paralleling MOSFETs?\",\"answer\":\"When using MOSFET paralleling, the document recommends using ferrite beads on the gate or using separate totem poles.\"}]","600V CoolMOS P6 Power Transistor - Product Datasheet | PDF",45]