[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-560895-105":3,"detail-sidebar-cat-0-en-105":81,"doc-detail-560895-en":130},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":74,"head_meta":76,"extra_data":78,"updated_unix":80},105,"en","2sc5296-npn-triple-diffused-planar-silicon-transistor","2SC5296 - NPN Triple Diffused Planar Silicon Transistor","","2SC5296 is an NPN triple diffused planar silicon transistor intended for CRT display horizontal deflection output applications. The document lists key features including high speed (tf typically 100 ns), high breakdown voltage (VCBO 1500 V), and high reliability processes. Absolute maximum ratings at 25°C cover voltages up to VCBO 1500 V and currents IC up to 8 A and ICP up to 16 A, plus thermal limits. Electrical characteristics and switching-related parameters provide cutoff, saturation, gain, storage time, and fall time values, along with safety, export, reproduction, and disclaimer notes.",{"@graph":14,"@context":73},[15,34,56],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/document/technology/","Technology",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/document/2sc5296-npn-triple-diffused-planar-silicon-transistor/560895/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/2sc5296-npn-triple-diffused-planar-silicon-transistor/560895.png","ImageObject",300,407,{"name":42,"@type":43},"Terk","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-10-22","2026-10-12",true,{"@type":52,"interactionType":53,"userInteractionCount":55},"InteractionCounter",{"@type":54},"ViewAction",5,{"@type":57,"mainEntity":58},"FAQPage",[59,65,69],{"name":60,"@type":61,"acceptedAnswer":62},"What are the main features of the 2SC5296 transistor?","Question",{"text":63,"@type":64},"It is specified for high-speed operation (typical tf=100 ns), high breakdown voltage (VCBO=1500 V), and high reliability using HVP and MBIT processes, including an on-chip damper diode.","Answer",{"name":66,"@type":61,"acceptedAnswer":67},"What are the absolute maximum ratings for the 2SC5296 at Ta=25°C?",{"text":68,"@type":64},"The document lists maximum voltages such as VCBO 1500 V, VCEO 800 V, and VEBO 6 V, current limits IC 8 A (pulse ICP 16 A), dissipation PC 3.0 W, and temperature limits Tj 150°C and Tstg -55 to +150°C.",{"name":70,"@type":61,"acceptedAnswer":71},"Which electrical characteristics are provided for operation at Ta=25°C?",{"text":72,"@type":64},"Electrical characteristics include collector cutoff current (ICBO), collector-to-emitter sustain voltage (VCEO(sus)), emitter cutoff current (IEBO), saturation voltages (VCE(sat) and VBE(sat)), DC current gain (hFE1/hFE2), and switching times such as storage time and fall time.","https://schema.org",{"og:url":32,"og:type":75,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":77,"canonical":32},"index,follow",{"doc_id":79,"site_id":7},560895,1792013579,{"code":4,"msg":82,"data":83},"success",[84,88,92,96,100,104,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":85,"show_sort_weight":86,"slug":87},"Story & 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Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |\n\nFeatures  \n· High speed : tf=100ns typ.  \n· High breakdown voltage : VCBO=1500V.  \n· High reliability (Adoption of HVP process) .  \n· Adoption of MBIT process.  \n· On-chip damper diode.  \nSpecifications  \nAbsolute Maximum Ratings at Ta = 25˚C  \nPackage Dimensions  \nunit:mm 2039D  \n\n| [2SC5296] |  |\n| --- | --- |\n| 21.0\u003Cbr>|  |\n| \u003Cbr>3.5 | 2 : Collector\u003Cbr>3 : Emitter SANYO : TO-3PML |\n\n\n| Parameter | Symbol | Conditions | Ratings | Unit |\n| --- | --- | --- | --- | --- |\n| Collector-to-Base Voltage | VCBO |  | 1500 | V |\n| Collector-to-Emitter Voltage | V CEO |  | 800 | V |\n| Emitter-to-Base Voltage | VEBO |  | 6 | V |\n| Collector Current | IC |  | 8 | A |\n| Collector Current (Pulse) | ICP |  | 16 | A |\n| Collector Dissipation | PC |  | 3.0 | W |\n|  |  | Tc=25˚C | 60 | W |\n| Junction Temperature | Tj |  | 150 | ˚C |\n| Storage Temperature | Tstg |  | –55 to +150 | ˚C |\n\nElectrical Characteristics at Ta = 25˚C  \n\n| Parameter | Symbol | Conditions | Ratings |  |  | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n|  |  |  | min | typ | max |  |\n| Collector Cutoff Current | ICBO | V CB=800V, IE=0 |  |  | 10 | µA |\n|  | ICES | VCE= 1500V, R BE=0 |  |  | 1.0 | mA |\n| Collector-to-Emitter Sustain Voltage | V CEO(sus) | IC= 100mA, IB=0 | 800 |  |  | V |\n| Emitter Cutoff Current | IEBO | VEB=4V, IC=0 | 40 |  | 130 | mA |\n| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC=5A, IB= 1.25A |  |  | 5 | V |\n| Base-to-Emitter Saturation Voltage | V BE(sat) | IC=5A, IB= 1.25A |  |  | 1.5 | V |\n\nContinued on next page.  \n Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.  \n SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.  \nSANYO Electric Co., Ltd. Semiconductor Company  \nTOKYO OFFICE Tokyo Bldg. , 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  \nO1899TS (KT)/11696YK (KOTO) TA-0585 No.5290–1/4  \n2SC5296  \nContinued from preceding page.  \n\n| Parameter | Symbol | Conditions | Ratings |  |  | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n|  |  |  | min | typ | max |  |\n| DC Current Gain | h FE1 | VCE=5V, IC= 1A | 15 |  | 25 |  |\n|  | h FE2 | VCE=5V, IC=5A | 4 |  | 7 |  |\n| Storage Time | tstg | IC=4A, IB1=0.8A, IB2=–1.6A |  |  | 3.0 | µs |\n| Fall Time | tf | IC=4A, IB1=0.8A, IB2=–1.6A |  | 0.1 | 0.2 | µs |\n\nSwitching Time Test Circuit  \nSpecifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.  \n SANYO Electric Co. , Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could c","cbCaiqbv7lSqTFUN","https://ap.wps.com/l/cbCaiqbv7lSqTFUN","pdf",102203,"English","# Features\n# Specifications\n## Absolute Maximum Ratings\n## Electrical Characteristics\n# Switching Time Test Circuit\n# Safety, Export, and Legal Notices","[{\"question\":\"What are the main features of the 2SC5296 transistor?\",\"answer\":\"It is specified for high-speed operation (typical tf=100 ns), high breakdown voltage (VCBO=1500 V), and high reliability using HVP and MBIT processes, including an on-chip damper diode.\"},{\"question\":\"What are the absolute maximum ratings for the 2SC5296 at Ta=25°C?\",\"answer\":\"The document lists maximum voltages such as VCBO 1500 V, VCEO 800 V, and VEBO 6 V, current limits IC 8 A (pulse ICP 16 A), dissipation PC 3.0 W, and temperature limits Tj 150°C and Tstg -55 to +150°C.\"},{\"question\":\"Which electrical characteristics are provided for operation at Ta=25°C?\",\"answer\":\"Electrical characteristics include collector cutoff current (ICBO), collector-to-emitter sustain voltage (VCEO(sus)), emitter cutoff current (IEBO), saturation voltages (VCE(sat) and VBE(sat)), DC current gain (hFE1/hFE2), and switching times such as storage time and fall time.\"}]","2SC5296 - NPN Triple Diffused Planar Silicon Transistor | PDF",1791804418]