[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-detail-563027-en":59,"doc-seo-563027-105":80},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":5,"data":60},{"doc_id":61,"user_id":62,"nickname":63,"user_avatar":64,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":66,"doc_content":67,"file_id":68,"file_url":69,"file_type":70,"file_size":71,"view_count":19,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":29,"language":72,"language_code":73,"site_id":74,"html_lang":73,"table_of_contents":75,"faqs":76,"seo_title":77,"seo_description":66,"update_tm":78,"read_time":79},563027,3985747860484,"dabgoudw","https://ap-avatar.wpscdn.com/davatar_276721f389ce27ea32af1340a28f341c","2SC4814 - Silicon Power Transistor Datasheet - High-Speed Switching","2SC4814 is an NPN silicon epitaxial power transistor designed for high-speed switching with low saturation voltage and high current gain (hFE). It targets precision control applications such as PWM control for pulse motors and brushless motors, as well as solenoid driving in automotive equipment. The datasheet lists electrical characteristics, absolute maximum ratings (voltages, currents, power, and temperatures), switching-time parameters, typical characteristics, and package/taping information for cost-optimized mounting.","DATA SHEET  \n|  | SILICON POWER TRANSISTOR\u003Cbr>2SC4814 |  |\n| --- | --- | --- |\n| NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |  |  |\n\nThe 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment.  \nIn addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction.  \nFEATURES  \n• Low VCE(sat) : VCE(sat) ≤ 0.3 V @IC = 1.5 A, IB = 10 mA  \n• High hFE: hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A  \n• On-chip dumper-diode  \n• Auto-mounting possible in radial taping specifications  \nABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  \n\n| Parameter | Symbol | Conditions | Ratings | Unit |\n| --- | --- | --- | --- | --- |\n| Collector to base voltage | VCBO |  | 120 | V |\n| Collector to emitter voltage | VCEO |  | 100 | V |\n| Emitter to base voltage | VEBO |  | 7.0 | V |\n| Collector current (DC) | IC(DC) |  | ±2.5 | A |\n| Collector current (pulse) | IC(pulse) | PW ≤ 300 µs, duty cycle ≤ 10% | ±5.0 | A |\n| Base current (DC) | IB(DC) |  | 1.0 | A |\n| Total power dissipation | PT | Ta = 25°C | 1.8 | W |\n| Junction temperature | Tj |  | 150 | °C |\n| Storage temperature | Tstg |  | −55 to +150 | °C |\n\nThe information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.  \nNot all devices/types available in every country. Please check with local NEC representative for availability and additional information.  \nDocument No. D15604EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K)  \nPrinted in Japan  \n©  2002  \nELECTRICAL CHARACTERISTICS (Ta = 25°C)  \n\n| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |\n| --- | --- | --- | --- | --- | --- | --- |\n| Collector cutoff current | ICBO | VCB = 120 V, IE = 0 |  |  | 50 | µA |\n| Emitter cutoff current | IEBO | VEB = 5 V, IC = 0 |  |  | 50 | µA |\n| DC current gain | hFE1* | VCE = 2 V, IC = 1.0 A | 300 | 700 | 1,200 | − |\n| DC current gain | hFE2* | VCE = 2 V, IC = 1.5 A | 250 | 600 |  | − |\n| Collector saturation voltage | VCE(sat)* | IC = 1.5 A, IB = 10 mA |  |  | 0.3 | V |\n| Base saturation voltage | VBE(sat)* | IC = 1.5 A, IB = 10 mA |  |  | 1.3 | V |\n| Gain bandwidth product | fT | VCE = 10 V, IC = 1.0 A |  | 60 |  | MHz |\n| Collector capacitance | Cob | VCE = 10 V, IE = 0 , f = 1 MHz |  | 40 |  | pF |\n| Turn-on time | ton | IC = 1.5 A, IB1 = −IB2 = 10 mARL = 8.0 Ω, VCC = 12 V\u003Cbr>Refer to the test circuit. |  | 0.5 |  | µs |\n| Storage time | tstg |  |  | 2.0 |  | µs |\n| Fall time | tf |  |  | 0.5 |  | µs |\n\n* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%  \nPACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION  \nElectrode Connection  \n1. Base  \n2. Collector  \n3. Emitter  \nEQUIVALENT CIRCUIT  \n0.7 MAX.  \n2 Data Sheet D15604EJ2V0DS  \nTYPICAL CHARACTERISTICS (Ta = 25°C)  \nTotal Power Diss ipation PT (W)  \nAmbient Temperature Ta (°C)  \nSingle pulse   \n Collector to Emitter Voltage VCE (V)   \nCollector Current IC (A)  \n Collector to Emitter Voltage VCE (V)   \nIC Derat ing dT (%)  \nT i Rans es s ancient Thermal t -aj C )  \nDC Current Gain hFE  \nAmbient Temperature Ta (°C)  \n Single pulse   \nPulse Width PW (s)  \nPulse test  \nCollector Current IC (A)  \nData Sheet D15604EJ2V0DS 3  \nPulse test  \nTurn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs)  \nCollector Current IC (A)  \n4 Data Sheet D15604EJ2V0DS  \nSWITCHING TIME (ton, tstg, tf) TEST CIRCUIT  \nBase current waveform  \nCollector current waveform  \nData Sheet D15604EJ2V0DS 5  \n• The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc. , for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are","cbCaitaUTNi2lzIB","https://ap.wps.com/l/cbCaitaUTNi2lzIB","pdf",172209,"English","en",105,"# Features\n## Electrical Characteristics\n## Absolute Maximum Ratings\n## Package Drawing and Taping Specification\n## Switching Time and Test Circuit\n## Notes and Disclaimers","[{\"question\":\"What are the key electrical strengths of the 2SC4814 transistor?\",\"answer\":\"The datasheet highlights low VCE(sat) (≤ 0.3 V at IC = 1.5 A, IB = 10 mA) and high hFE (300 to 1,200 at VCE = 2.0 V, IC = 1.0 A). It also includes an on-chip dumper-diode.\"},{\"question\":\"What absolute maximum ratings are specified for the 2SC4814?\",\"answer\":\"Absolute maximum ratings include VCBO = 120 V, VCEO = 100 V, VEBO = 7.0 V, IC(DC) = ±2.5 A, and IC(pulse) = ±5.0 A under specified pulse conditions. It also specifies PT = 1.8 W and temperature limits with Tj up to 150°C and Tstg from −55 to +150°C.\"},{\"question\":\"For what applications is the 2SC4814 intended?\",\"answer\":\"The transistor is intended for high-precision control using PWM for pulse motors and brushless motors in OA/FA equipment, and for solenoid driving in automotive equipment.\"}]","2SC4814 - Silicon Power Transistor Datasheet - High-Speed Switching | PDF",1791810367,15,{"code":4,"msg":81,"data":82},"ok",{"site_id":74,"language":73,"slug":83,"title":65,"keywords":84,"description":66,"schema_data":85,"social_meta":139,"head_meta":141,"extra_data":143,"updated_unix":144},"2sc4814-silicon-power-transistor-datasheet-high-speed-switching","",{"@graph":86,"@context":138},[87,101,121],{"@type":88,"itemListElement":89},"BreadcrumbList",[90,94,96,99],{"item":91,"name":92,"@type":93,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":95,"name":9,"@type":93,"position":14},"https://docshare.wps.com/document/",{"item":97,"name":30,"@type":93,"position":98},"https://docshare.wps.com/document/technology/",3,{"item":100,"name":65,"@type":93,"position":19},"https://docshare.wps.com/document/2sc4814-silicon-power-transistor-datasheet-high-speed-switching/563027/",{"url":100,"name":65,"@type":102,"image":103,"author":108,"headline":65,"publisher":110,"fileFormat":113,"inLanguage":73,"description":66,"dateModified":114,"datePublished":115,"encodingFormat":113,"isAccessibleForFree":116,"interactionStatistic":117},"DigitalDocument",{"url":104,"@type":105,"width":106,"height":107},"https://docshare.wps.com/thumbnails/2sc4814-silicon-power-transistor-datasheet-high-speed-switching/563027.png","ImageObject",300,407,{"name":63,"@type":109},"Person",{"url":91,"name":111,"@type":112},"DocShare","Organization","application/pdf","2026-10-14","2026-10-12",true,{"@type":118,"interactionType":119,"userInteractionCount":19},"InteractionCounter",{"@type":120},"ViewAction",{"@type":122,"mainEntity":123},"FAQPage",[124,130,134],{"name":125,"@type":126,"acceptedAnswer":127},"What are the key electrical strengths of the 2SC4814 transistor?","Question",{"text":128,"@type":129},"The datasheet highlights low VCE(sat) (≤ 0.3 V at IC = 1.5 A, IB = 10 mA) and high hFE (300 to 1,200 at VCE = 2.0 V, IC = 1.0 A). It also includes an on-chip dumper-diode.","Answer",{"name":131,"@type":126,"acceptedAnswer":132},"What absolute maximum ratings are specified for the 2SC4814?",{"text":133,"@type":129},"Absolute maximum ratings include VCBO = 120 V, VCEO = 100 V, VEBO = 7.0 V, IC(DC) = ±2.5 A, and IC(pulse) = ±5.0 A under specified pulse conditions. It also specifies PT = 1.8 W and temperature limits with Tj up to 150°C and Tstg from −55 to +150°C.",{"name":135,"@type":126,"acceptedAnswer":136},"For what applications is the 2SC4814 intended?",{"text":137,"@type":129},"The transistor is intended for high-precision control using PWM for pulse motors and brushless motors in OA/FA equipment, and for solenoid driving in automotive equipment.","https://schema.org",{"og:url":100,"og:type":140,"og:title":65,"og:site_name":111,"og:description":66},"article",{"robots":142,"canonical":100},"index,follow",{"doc_id":61,"site_id":74},1791850806]