[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-562948-105":59,"doc-detail-562948-en":124},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":117,"head_meta":119,"extra_data":121,"updated_unix":123},105,"en","2sa12462sc3114-datasheet-pnpnpn-epitaxial-planar-silicon-transistors","2SA1246/2SC3114 - Datasheet - PNP/NPN Epitaxial Planar Silicon Transistors","","Datasheet for the 2SA1246/2SC3114 transistors, providing key feature notes such as high VEBO and wide ASO with strong resistance to breakdown. Includes absolute maximum ratings at Ta=25°C, electrical characteristics, and parameters like VCB0, VCE0, VEBO, collector current, DC current gain (hFE), gain-bandwidth product, saturation voltages, breakdown voltages, and common-base output capacitance. Supplies unit definitions and package dimensions for the specified construction and usage limits.",{"@graph":69,"@context":116},[70,84,99],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/2sa12462sc3114-datasheet-pnpnpn-epitaxial-planar-silicon-transistors/562948/",{"url":83,"name":65,"@type":85,"author":86,"headline":65,"publisher":89,"fileFormat":92,"inLanguage":63,"description":67,"dateModified":93,"datePublished":93,"encodingFormat":92,"isAccessibleForFree":94,"interactionStatistic":95},"DigitalDocument",{"name":87,"@type":88},"dawugda","Person",{"url":74,"name":90,"@type":91},"DocShare","Organization","application/pdf","2026-10-12",true,{"@type":96,"interactionType":97,"userInteractionCount":4},"InteractionCounter",{"@type":98},"ViewAction",{"@type":100,"mainEntity":101},"FAQPage",[102,108,112],{"name":103,"@type":104,"acceptedAnswer":105},"What are the main features listed for the 2SA1246/2SC3114 transistors?","Question",{"text":106,"@type":107},"The document highlights high VEBO and wide ASO with highly resistant breakdown performance.","Answer",{"name":109,"@type":104,"acceptedAnswer":110},"Which absolute maximum rating conditions are specified in the datasheet?",{"text":111,"@type":107},"Absolute maximum ratings are given with Ta=25°C and include electrical and thermal limits such as collector current, power dissipation, and junction/storage temperature.",{"name":113,"@type":104,"acceptedAnswer":114},"What does the datasheet include regarding package and mechanical information?",{"text":115,"@type":107},"It provides package dimensions for Package 2003A and labels for base and collector/element structure along with the transistor configuration mapping.","https://schema.org",{"og:url":83,"og:type":118,"og:title":65,"og:site_name":90,"og:description":67},"article",{"robots":120,"canonical":83},"index,follow",{"doc_id":122,"site_id":62},562948,1791810152,{"code":4,"msg":5,"data":125},{"doc_id":122,"user_id":126,"nickname":87,"user_avatar":127,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":128,"file_id":129,"file_url":130,"file_type":131,"file_size":132,"view_count":4,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":19,"language":133,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":134,"faqs":135,"seo_title":136,"seo_description":67,"update_tm":123,"read_time":52},3985747870947,"https://ap-avatar.wpscdn.com/davatar_3d24733baf745e90a7e4bdd5f77d97b2","# Features\n\n·High VEBO  \n·Wide ASO and highly resistant to breakdown  \n(  ):2SA1246  \nAbsolute Maximum Ratings/Ta=25℃  \nColiector to base voltageCollector to emitter voltageEmitter to base voltageCollector currentCollector Current(Pulse)Collector dissipationJunction temperatureStorage temperature  \nElectrical Characteristics/Ta=25℃  \nCollector cutoff currentEmitter cutoff currentDC current gainGain-bandwidth productCommon base output capacitance  \nC-E saturation voltage  \nC-B breakdown voltage  \nC-E breakdown voltage  \nE-B breakdown voltage  \n*The 2SA1246/2SC3114 are classified as follows according to hFE at 1 mA  \n\n| 100 R 200   | 140 S 280   | 200 T 400   | 280 U 560   |\n| --- | --- | --- | --- |\n\n\n| SANYO   | No.1047B  \u003Cbr>2SA1246/2SC3114   |\n| --- | --- |\n|  | PNP/NPN Epitaxial Planar Silicon Transistors  \u003Cbr>High-VEBO,AFAmp Applications   |\n\nunit  \nVCBO  \nVCEO  \nVEBO  \nIc  \nIc  \nTstg  \nICBOVCB=(一)40V,IE=0(一)0.1 μAIEBOVEB=(一)10V,Ic=0hFEVCE=(-)6V,Ic=(-)1 mA100*fTVCE=(-6V,Ic=(-)1mACobVCB=(-)6V,f=1 MHzVCE(sat)Ic=(-)50 mA,IB=(一)5 mAV(BR)CBCIc=(一)10μA,IE=0(一)60VV(BR)CEOIc=(一)1 mA,RBE=0∞(一)50V(BR)EBOlE=(一)10μA,Ic=0(一)15  \n(一)60  \nV  \n(一)50  \nV  \n(一)15  \nV  \n(一)150  \nmA  \n(一)300  \nmA  \n400  \nmW  \n℃  \n150  \n℃  \n-55 to+150  \nPackage Dimensions 2003A(unit:mm)  \nB.Base  \nC.CollectorSANYO:NPE.Emitter  \nDC Current Gain,hFE  \nCollector to Emitter Voltage,VCE-VCollector to Emitter Voltage,VCE-VIC-VCECollector to Emitter Voltage,VCE-VCollector to Emitter Voltage,VCE-VIc-VBE  \nCollector Current, Ic-mA  \nColector Current,lCImA  \n0.40.81.21.6Bese to Emitter Voltage,VBE-VBase to Emitter Voltage,VBE-VhFE -IchF-Ic  \nDC Current Gain,hFE  \n-0.1-1.0·100.1Collector Current,Ic-mACollector Current,Ic-mA  \nNo.1047-2/4  \nollector to Emitter  \nSaturation Voltage,VCE(sat)一\u003C  \nCommon Base Output Capacitance, ob一pF  \nSaturation Voftage,VCE(sat)I\u003C  \nCollector to Emitter  \nNo.1047-3/4  \n\n| No products described or contained herein are intended for use in surgical implants,life-support systems  \u003Cbr>aerospace equipment,nuclear power control systems,vehicles,disaster/crime-prevention equipment and  \u003Cbr>the like,the failure of which may directly or indirectly cause injury,death or property loss.  \u003Cbr>■Anyone purchasing any products described or contained herein for an above-mentioned use shall:  \u003Cbr>①Accept full responsibility and ndemnify and defend SANYO ELECTRIC Co.,LTD.,its affiliates,  \u003Cbr>subsidiaries and distributors and all their officers and employees,jointly and severally,against any  \u003Cbr>and all claims and litigation and all damages,cost and expenses associated with such use:  \u003Cbr>②Not impose any responsibility for any fault or negligence which may be cited in any such claim or  \u003Cbr>litigation on SANYO ELECTRIC C0.LTD.its affiliates.subsidiaries and distributors or any of  \u003Cbr>their officers and employees jointly or severally.  \u003Cbr>■Information(including circuit diagrams and cirouit parameters)herein-is for example only;it is not guarant-  \u003Cbr>eed for volume production.SANY0 believes information herein is accurate and reliable.but no guarantees  \u003Cbr>are made or implied regarding its use or any nfringements of intellectual property rights or other rights of  \u003Cbr>third parties.   |\n| --- |","cbCaiabwdwVKn454","https://ap.wps.com/l/cbCaiabwdwVKn454","pdf",110455,"English","# Features\n# Absolute Maximum Ratings (Ta=25°C)\n## Electrical Characteristics (Ta=25°C)\n# Package Dimensions (2003A)\n# Notes and Usage Limitations","[{\"question\":\"What are the main features listed for the 2SA1246/2SC3114 transistors?\",\"answer\":\"The document highlights high VEBO and wide ASO with highly resistant breakdown performance.\"},{\"question\":\"Which absolute maximum rating conditions are specified in the datasheet?\",\"answer\":\"Absolute maximum ratings are given with Ta=25°C and include electrical and thermal limits such as collector current, power dissipation, and junction/storage temperature.\"},{\"question\":\"What does the datasheet include regarding package and mechanical information?\",\"answer\":\"It provides package dimensions for Package 2003A and labels for base and collector/element structure along with the transistor configuration mapping.\"}]","2SA1246/2SC3114 - Datasheet - PNP/NPN Epitaxial Planar Silicon Transistors | PDF"]