[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-671572-105":3,"detail-sidebar-cat-0-en-105":80,"doc-detail-671572-en":130},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":73,"head_meta":75,"extra_data":77,"updated_unix":79},105,"en","2n2222a-npn-transistor-silicon-planar-epitaxial","2N2222A - NPN Transistor - Silicon Planar Epitaxial","","2N2222A is a silicon planar epitaxial NPN transistor designed for high-speed switching applications, supporting collector currents up to 500 mA. The document lists design highlights including useful current gain across collector current ranges, low leakage currents, and low saturation voltage. It provides absolute maximum ratings such as VCBO 75 V, VCEO 40 V, VEBO 6 V, IC up to 800 mA, dissipation limits, and thermal resistance. It also details electrical characteristics including breakdown voltages, saturation voltages, current gain parameters (hFE/hfe), small-signal gain, noise figure, capacitances, and switching times.",{"@graph":14,"@context":72},[15,34,55],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/document/technology/","Technology",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/document/2n2222a-npn-transistor-silicon-planar-epitaxial/671572/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/2n2222a-npn-transistor-silicon-planar-epitaxial/671572.png","ImageObject",300,407,{"name":42,"@type":43},"Genevieve","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-11-02","2026-11-01",true,{"@type":52,"interactionType":53,"userInteractionCount":26},"InteractionCounter",{"@type":54},"ViewAction",{"@type":56,"mainEntity":57},"FAQPage",[58,64,68],{"name":59,"@type":60,"acceptedAnswer":61},"What is the intended application of the 2N2222A transistor?","Question",{"text":62,"@type":63},"It is designed for high speed switching applications.","Answer",{"name":65,"@type":60,"acceptedAnswer":66},"What are the absolute maximum voltage ratings for the 2N2222A?",{"text":67,"@type":63},"VCBO is 75 V, VCEO is 40 V, and VEBO is 6 V.",{"name":69,"@type":60,"acceptedAnswer":70},"What switching-related timing parameters are provided?",{"text":71,"@type":63},"The document lists delay time, rise time, storage time, and fall time, along with feedback time constant.","https://schema.org",{"og:url":32,"og:type":74,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":76,"canonical":32},"index,follow",{"doc_id":78,"site_id":7},671572,1793577412,{"code":4,"msg":81,"data":82},"success",[83,87,91,95,100,104,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":84,"show_sort_weight":85,"slug":86},"Story & Novel",90,"story-novel",{"id":26,"doc_module":4,"doc_module_name":25,"category_name":88,"show_sort_weight":89,"slug":90},"Literature",80,"literature",{"id":33,"doc_module":4,"doc_module_name":25,"category_name":92,"show_sort_weight":93,"slug":94},"Exam",70,"exam",{"id":96,"doc_module":4,"doc_module_name":25,"category_name":97,"show_sort_weight":98,"slug":99},5,"Comic",60,"comic",{"id":101,"doc_module":4,"doc_module_name":25,"category_name":29,"show_sort_weight":102,"slug":103},6,50,"technology",{"id":105,"doc_module":4,"doc_module_name":25,"category_name":106,"show_sort_weight":107,"slug":108},7,"Healthcare",40,"healthcare",{"id":110,"doc_module":4,"doc_module_name":25,"category_name":111,"show_sort_weight":112,"slug":113},8,"Research & Report",30,"research-report",{"id":115,"doc_module":4,"doc_module_name":25,"category_name":116,"show_sort_weight":117,"slug":118},9,"Religion & Spirituality",20,"religion-spirituality",{"id":117,"doc_module":4,"doc_module_name":25,"category_name":120,"show_sort_weight":117,"slug":121},"World Cup","world-cup",{"id":123,"doc_module":4,"doc_module_name":25,"category_name":124,"show_sort_weight":123,"slug":125},10,"Lifestyle","lifestyle",{"id":127,"doc_module":4,"doc_module_name":25,"category_name":128,"show_sort_weight":96,"slug":129},19,"General","general",{"code":4,"msg":81,"data":131},{"doc_id":78,"user_id":132,"nickname":42,"user_avatar":133,"doc_module":4,"category_id":101,"category_name":29,"doc_title":10,"doc_description":12,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":26,"is_deleted":4,"is_public":22,"is_downloadable":22,"audit_status":22,"page_count":96,"language":139,"language_code":8,"site_id":7,"html_lang":8,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":12,"update_tm":79,"read_time":143},1374391974585,"https://ap-avatar.wpscdn.com/davatar_276721f389ce27ea32af1340a28f341c","2N2222ANPN Transistor  \nDESCRIPTION  \nThe 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.  \nABSOLUTE MAXIMUM RATINGS  \n\n| Parameter |  | Symbol | Rating | UNIT |\n| --- | --- | --- | --- | --- |\n| Collector-Base Votlage (IE=0) |  | VCBO | 75 | V |\n| Collector-Emitter Voltage (IB=0) |  | VCEO | 40 | V |\n| Emitter-Base Voltage(IC=0) |  | VEBO | 6 | V |\n| Collector Current |  | IC | 800 | mA |\n| Total Dissipation | at TA≤25℃ | Ptot | 0.5 | W |\n|  | at TC≤25℃ |  | 1.8 | W |\n| Thermal Resistance Junction to Ambient |  | Rthja | 300 | °C/W |\n| Thermal Resistance Junction to Case |  | Rthjc | 83.3 | °C/W |\n| Operating Temperature |  | TJ | 175 | °C |\n| Storage Temperature Range |  | TSTG | -65 ~ 200 | °C |\n\nELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)  \n\n| Parameter | Symbol | Test Condition. | Min. | Max. | Unit |\n| --- | --- | --- | --- | --- | --- |\n| Collector Cut-off Current (IE=0) | ICBO | VCB=60V |  | 10 | nA |\n|  |  | VCB=60V, TC=150°C |  | 10 | uA |\n| Collector Cut-off Current (VBE=-3V) | ICEX | VCE=60V |  | 10 | nA |\n| Base Cut-off Current(VBE=-3V) | IBEX | VCE=60V |  | 20 | nA |\n| Emitter Cut-off Current(IC=0) | IEBO | VEB=3V |  | 10 | nA |\n| Collector-Base Breakdown Voltage (IE=0) | V(BR)CBO* | IC=10uA | 75 |  | V |\n| Collector-Emitter Breakdown Voltage(IB=0) | V(BR)CEO* | IC=10mA | 40 |  | V |\n| Emitter-Base Breakdown Voltage(IC=0) | V(BR)EBO* | IE=10uA | 6 |  | V |\n| Collector-Emitter Saturation Voltage | VCE(sat)* | IC=150mA IB=15mA |  | 0.3 | V |\n|  |  | IC=500mA IB=50mA |  | 1 | V |\n| Base-Emitter Saturation Voltage | VBE(sat)* | IC=150mA IB=15mA | 0.6 | 1.2 | V |\n|  |  | IC=500mA IB=50mA |  | 2 | V |\n| DC Current Gain | hFE* | IC=0 . 1mA VCE=10V | 35 | 300 |  |\n|  |  | IC=1mA VCE=10V | 50 |  |  |\n|  |  | IC=10mA VCE=10V | 75 |  |  |\n|  |  | IC=150mA VCE=10V | 100 |  |  |\n|  |  | IC=500mA VCE=10V | 40 |  |  |\n|  |  | IC=150mA VCE=1V | 50 |  |  |\n|  |  | IC=10mA VCE=10V TA=-55℃ | 35 |  |  |\n| Small Signal Current Gain | hfe* | IC=1mA VCE=10V f=1KHz | 50 | 300 |  |\n|  |  | IC=10mA VCE=10V f=1KHz | 75 | 375 |  |\n\n2N2222A  \n NPN Transistor  \nELECTRICAL CHARACTERISTICS(continued)  \n\n| Parameter | Symbol | Test Condition. | Min. | Max. | Unit |\n| --- | --- | --- | --- | --- | --- |\n| Transition Frequency | fT | IC=20mA VCE=20V f=100MHz | 300 |  | MHz |\n| Emitter Base Capacitance | CEBO | IC=0 VEB=0 .5V f=100KHz |  | 25 | pF |\n| Collector Base Capacitance | CCBO | IE=0 VCB=10V f=100KHz |  | 8 | pF |\n| Real Part of Input Impedance | Re(hie) | IC=20mA VCE=20V f=300MHz |  | 60 | Ω |\n| Noise Figure | NF | IC=0 . 1mA VCE=10V f=1KHz Rg=1KΩ | 4(Typ.) |  | dB |\n| Input Impedance | hie | IC=1mA VCE=10V | 2 | 8 | kΩ |\n|  |  | IC=10mA VCE=10V | 0.25 | 1.25 | kΩ |\n| Reverse Voltage Ratio | hre | IC=1mA VCE=10V |  | 8 | 10-4 |\n|  |  | IC=10mA VCE=10V |  | 4 | 10-4 |\n| Output Admittance | hoe | IC=1mA VCE=10V | 5 | 35 | uS |\n|  |  | IC=10mA VCE=10V | 25 | 200 | uS |\n| Delay Time | td** | VCC=30V IC=150mAIB1=15mA VBB=-0 . 5V |  | 10 | nS |\n| Rise Time | tr** | VCC=30V IC=150mAIB1=15mA VBB=-0 . 5V |  | 25 | nS |\n| Storage Time | ts** | VCC=30V IC=150mA IB1=-IB2=15mA |  | 225 | nS |\n| Fall Time | tf** | VCC=30V IC=150mA IB1=-IB2=15mA |  | 60 | nS |\n| Feedback Time Constant | rbb’ Cd’c | IC=20Ma VCE=20V f=31 .8MHz |  | 150 | pS |\n\n*Pulsed: Pulse duration =300us, duty cycle≤1%  \n**see test circuit  \nRATINGS AND CHARACTERISTICS CURVES  \n2N2222A  \n NPN Transistor  \n2N2222A  \n NPN Transistor  \n2N2222A  \n NPN Transistor  \nPACKAGE OUTLINE DIMENSIONS (TO-18 PACKAGE)","cbCaikf8US2oCWfq","https://ap.wps.com/l/cbCaikf8US2oCWfq","pdf",1341546,"English","# Description\n# Absolute Maximum Ratings\n# Electrical Characteristics (TC = 25 °C)\n## Electrical Characteristics (continued)\n# Ratings and Characteristics Curves\n# Package Outline Dimensions (TO-18 Package)","[{\"question\":\"What is the intended application of the 2N2222A transistor?\",\"answer\":\"It is designed for high speed switching applications.\"},{\"question\":\"What are the absolute maximum voltage ratings for the 2N2222A?\",\"answer\":\"VCBO is 75 V, VCEO is 40 V, and VEBO is 6 V.\"},{\"question\":\"What switching-related timing parameters are provided?\",\"answer\":\"The document lists delay time, rise time, storage time, and fall time, along with feedback time constant.\"}]","2N2222A - NPN Transistor - Silicon Planar Epitaxial | PDF",13]