[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"detail-sidebar-cat-0-en-105":3,"doc-seo-671571-105":59,"doc-detail-671571-en":130},{"code":4,"msg":5,"data":6},0,"success",[7,13,18,23,28,33,38,43,48,51,55],{"id":8,"doc_module":4,"doc_module_name":9,"category_name":10,"show_sort_weight":11,"slug":12},1,"Document","Story & Novel",90,"story-novel",{"id":14,"doc_module":4,"doc_module_name":9,"category_name":15,"show_sort_weight":16,"slug":17},2,"Literature",80,"literature",{"id":19,"doc_module":4,"doc_module_name":9,"category_name":20,"show_sort_weight":21,"slug":22},4,"Exam",70,"exam",{"id":24,"doc_module":4,"doc_module_name":9,"category_name":25,"show_sort_weight":26,"slug":27},5,"Comic",60,"comic",{"id":29,"doc_module":4,"doc_module_name":9,"category_name":30,"show_sort_weight":31,"slug":32},6,"Technology",50,"technology",{"id":34,"doc_module":4,"doc_module_name":9,"category_name":35,"show_sort_weight":36,"slug":37},7,"Healthcare",40,"healthcare",{"id":39,"doc_module":4,"doc_module_name":9,"category_name":40,"show_sort_weight":41,"slug":42},8,"Research & Report",30,"research-report",{"id":44,"doc_module":4,"doc_module_name":9,"category_name":45,"show_sort_weight":46,"slug":47},9,"Religion & Spirituality",20,"religion-spirituality",{"id":46,"doc_module":4,"doc_module_name":9,"category_name":49,"show_sort_weight":46,"slug":50},"World Cup","world-cup",{"id":52,"doc_module":4,"doc_module_name":9,"category_name":53,"show_sort_weight":52,"slug":54},10,"Lifestyle","lifestyle",{"id":56,"doc_module":4,"doc_module_name":9,"category_name":57,"show_sort_weight":24,"slug":58},19,"General","general",{"code":4,"msg":60,"data":61},"ok",{"site_id":62,"language":63,"slug":64,"title":65,"keywords":66,"description":67,"schema_data":68,"social_meta":123,"head_meta":125,"extra_data":127,"updated_unix":129},105,"en","2n2222-semiconductor-technical-data","2N2222 - Semiconductor Technical Data","","Semiconductor technical datasheet for an NPN silicon transistor (2N2222A). Provides maximum ratings including collector-emitter voltage, collector-base and emitter-base voltages, continuous collector current, device power dissipation at specified ambient and case temperatures, and allowable junction temperature range. Summarizes thermal characteristics (junction-to-ambient and junction-to-case thermal resistance) plus detailed electrical parameters for OFF, ON, and small-signal behavior, including breakdown voltages, cutoff currents, DC current gain, saturation voltages, capacitances, input impedance, and noise figure. Includes switching characteristics with delay, rise, storage, and fall times.",{"@graph":69,"@context":122},[70,84,105],{"@type":71,"itemListElement":72},"BreadcrumbList",[73,77,79,82],{"item":74,"name":75,"@type":76,"position":8},"https://docshare.wps.com","Home","ListItem",{"item":78,"name":9,"@type":76,"position":14},"https://docshare.wps.com/document/",{"item":80,"name":30,"@type":76,"position":81},"https://docshare.wps.com/document/technology/",3,{"item":83,"name":65,"@type":76,"position":19},"https://docshare.wps.com/document/2n2222-semiconductor-technical-data/671571/",{"url":83,"name":65,"@type":85,"image":86,"author":91,"headline":65,"publisher":94,"fileFormat":97,"inLanguage":63,"description":67,"dateModified":98,"datePublished":99,"encodingFormat":97,"isAccessibleForFree":100,"interactionStatistic":101},"DigitalDocument",{"url":87,"@type":88,"width":89,"height":90},"https://docshare.wps.com/thumbnails/2n2222-semiconductor-technical-data/671571.png","ImageObject",300,407,{"name":92,"@type":93},"Rowan","Person",{"url":74,"name":95,"@type":96},"DocShare","Organization","application/pdf","2026-11-03","2026-11-01",true,{"@type":102,"interactionType":103,"userInteractionCount":81},"InteractionCounter",{"@type":104},"ViewAction",{"@type":106,"mainEntity":107},"FAQPage",[108,114,118],{"name":109,"@type":110,"acceptedAnswer":111},"What are the maximum ratings for the 2N2222A transistor?","Question",{"text":112,"@type":113},"The datasheet lists maximum collector-emitter voltage, collector-base voltage, emitter-base voltage, continuous collector current, power dissipation versus temperature, and a junction temperature range of -55 to +150 °C.","Answer",{"name":115,"@type":110,"acceptedAnswer":116},"What ON and OFF electrical characteristics are provided?",{"text":117,"@type":113},"OFF characteristics include breakdown voltages and cutoff currents, while ON characteristics include DC current gain (hFE) and saturation voltages (VCE(sat) and VBE(sat)) for specified test currents.",{"name":119,"@type":110,"acceptedAnswer":120},"Which switching parameters are listed for turn-on and turn-off performance?",{"text":121,"@type":113},"Switching characteristics include delay time (td), rise time (tr), storage time (ts), and fall time (tf), along with figure references and pulse-test conditions.","https://schema.org",{"og:url":83,"og:type":124,"og:title":65,"og:site_name":95,"og:description":67},"article",{"robots":126,"canonical":83},"index,follow",{"doc_id":128,"site_id":62},671571,1793577371,{"code":4,"msg":5,"data":131},{"doc_id":128,"user_id":132,"nickname":92,"user_avatar":133,"doc_module":4,"category_id":29,"category_name":30,"doc_title":65,"doc_description":67,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":81,"is_deleted":4,"is_public":8,"is_downloadable":8,"audit_status":8,"page_count":29,"language":139,"language_code":63,"site_id":62,"html_lang":63,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":67,"update_tm":129,"read_time":143},1099514067415,"https://ap-avatar.wpscdn.com/avatar/100002539d78ffe74a7?x-image-process=image/resize,m_fixed,w_180,h_180&k=1779092875211072502","􀀅􀀇􀀊􀀇􀀉􀀇􀀄􀀃  \nSEMICONDUCTOR TECHNICAL DATA  \nOrder this document by P2N2222A/D  \n􀀃􀀐􀀓􀀏􀀎􀀍􀀎􀀌􀀔 􀀊􀀔􀀋􀀑􀀕􀀎􀀕􀀖􀀒􀀔􀀕  \nNPN Silicon  \nMAXIMUM RATINGS  \nCOLLECTOR 1  \n3  \nEMITTER  \n\n| Rating | Symbol | Value | Unit |\n| --- | --- | --- | --- |\n| Collector–Emitter Voltage | V CEO | 40 | Vdc |\n| Collector–Base Voltage | VCBO | 75 | Vdc |\n| Emitter–Base Voltage | VEBO | 6.0 | Vdc |\n| Collector Current—Continuous | IC | 600 | mAdc |\n| Total Device Dissipation @ TA = 25°CDerate above 25°C | PD | 625\u003Cbr>5.0 | mW\u003Cbr>mW/°C |\n| Total Device Dissipation @ TC = 25°CDerate above 25°C | PD | 1.5\u003Cbr>12 | Watts\u003Cbr>mW/°C |\n| Operating and Storage Junction Temperature Range | TJ , Tstg | –55 to +150 | °C |\n\nTHERMAL CHARACTERISTICS  \n\n| Characteristic | Symbol | Max | Unit |\n| --- | --- | --- | --- |\n| Thermal Resistance, Junction to Ambient | R 􀀂JA | 200 | °C/W |\n| Thermal Resistance, Junction to Case | R 􀀂JC | 83.3 | °C/W |\n\nELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  \n􀀈􀀂􀀆􀀂􀀂􀀂􀀂􀀃  \nCASE 29–04, STYLE 17 TO–92 (TO–226AA)  \n\n| Characteristic | Symbol | Min | Max | Unit |\n| --- | --- | --- | --- | --- |\n\nOFF CHARACTERISTICS  \n\n| Collector–Emitter Breakdown Voltage\u003Cbr>(IC = 10 mAdc, IB = 0) | V (BR)CEO | 40 | — | Vdc |\n| --- | --- | --- | --- | --- |\n| Collector–Base Breakdown Voltage\u003Cbr>(IC = 10 􀀁Adc, IE = 0) | V (BR)CBO | 75 | — | Vdc |\n| Emitter–Base Breakdown Voltage\u003Cbr>(IE = 10 􀀁Adc, IC = 0) | V (BR)EBO | 6.0 | — | Vdc |\n| Collector Cutoff Current\u003Cbr>(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) | ICEX | — | 10 | nAdc |\n| Collector Cutoff Current\u003Cbr>(V CB = 60 Vdc, IE = 0)\u003Cbr>(V CB = 60 Vdc, IE = 0, TA = 150°C) | ICBO | —\u003Cbr>— | 0.01\u003Cbr>10 | µAdc |\n| Emitter Cutoff Current\u003Cbr>(VEB = 3.0 Vdc, IC = 0) | IEBO | — | 10 | nAdc |\n| Collector Cutoff Current\u003Cbr>(VCE = 10 V) | ICEO | — | 10 | nAdc |\n| Base Cutoff Current\u003Cbr>(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) | IBEX | — | 20 | nAdc |\n\n􀁗 Motorola, Inc. 1996  \n􀀄􀀁􀀃􀀁􀀁􀀁􀀁􀀂  \nELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)  \n\n| Characteristic | Symbol | Min | Max | Unit |\n| --- | --- | --- | --- | --- |\n\nON CHARACTERISTICS  \n\n| DC Current Gain\u003Cbr>(IC = 0.1 mAdc, VCE = 10 Vdc)\u003Cbr>(IC = 1.0 mAdc, VCE = 10 Vdc)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)\u003Cbr>(IC = 150 mAdc, VCE = 10 Vdc)(1)\u003Cbr>(IC = 150 mAdc, VCE = 1.0 Vdc)(1)\u003Cbr>(IC = 500 mAdc, VCE = 10 Vdc)(1) | h FE | 35\u003Cbr>50\u003Cbr>75\u003Cbr>35\u003Cbr>100\u003Cbr>50\u003Cbr>40 | 300\u003Cbr>—\u003Cbr>— | — |\n| --- | --- | --- | --- | --- |\n| Collector–Emitter Saturation Voltage(1)\u003Cbr>(IC = 150 mAdc, IB = 15 mAdc)\u003Cbr>(IC = 500 mAdc, IB = 50 mAdc) | VCE(sat) | —\u003Cbr>— | 0.3\u003Cbr>1.0 | Vdc |\n| Base–Emitter Saturation Voltage(1)\u003Cbr>(IC = 150 mAdc, IB = 15 mAdc)\u003Cbr>(IC = 500 mAdc, IB = 50 mAdc) | V BE(sat) | 0.6 | 1.2\u003Cbr>2.0 | Vdc |\n\nSMALL–SIGNAL CHARACTERISTICS  \n\n| Current–Gain—Bandwidth Product(2)\u003Cbr>(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 300 | — | MHz |\n| --- | --- | --- | --- | --- |\n| Output Capacitance\u003Cbr>(V CB = 10 Vdc, IE = 0, f = 1.0 MHz) | Cobo | — | 8.0 | pF |\n| Input Capacitance\u003Cbr>(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | Cibo | — | 25 | pF |\n| Input Impedance\u003Cbr>(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hie | 2.0\u003Cbr>0.25 | 8.0\u003Cbr>1.25 | kΩ |\n| Voltage Feedback Ratio\u003Cbr>(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | h re | —\u003Cbr>— | 8.0\u003Cbr>4.0 | X 10–4 |\n| Small–Signal Current Gain\u003Cbr>(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hfe | 50\u003Cbr>75 | 300\u003Cbr>375 | — |\n| Output Admittance\u003Cbr>(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)\u003Cbr>(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hoe | 5.0\u003Cbr>25 | 35\u003Cbr>200 | 􀀁mhos |\n| Collector Base Time Constant\u003Cbr>(IE = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz) | rb′Cc | — | 150 | ps |\n| Noise Figure\u003Cbr>(IC = 100 􀀁Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) | NF | — | 4.0 | dB |\n\nSWITCHING CHARACTERISTICS  \n\n| Delay Time | (V CC = 30 Vdc, V BE(off) = –2.0 Vdc,\u003Cbr>IC = 150 mA","cbCaiakBM7jYgX94","https://ap.wps.com/l/cbCaiakBM7jYgX94","pdf",244260,"English","# Maximum Ratings\n# Thermal Characteristics\n# Electrical Characteristics\n## OFF Characteristics\n## ON Characteristics\n## Small-Signal Characteristics\n# Switching Characteristics","[{\"question\":\"What are the maximum ratings for the 2N2222A transistor?\",\"answer\":\"The datasheet lists maximum collector-emitter voltage, collector-base voltage, emitter-base voltage, continuous collector current, power dissipation versus temperature, and a junction temperature range of -55 to +150 °C.\"},{\"question\":\"What ON and OFF electrical characteristics are provided?\",\"answer\":\"OFF characteristics include breakdown voltages and cutoff currents, while ON characteristics include DC current gain (hFE) and saturation voltages (VCE(sat) and VBE(sat)) for specified test currents.\"},{\"question\":\"Which switching parameters are listed for turn-on and turn-off performance?\",\"answer\":\"Switching characteristics include delay time (td), rise time (tr), storage time (ts), and fall time (tf), along with figure references and pulse-test conditions.\"}]","2N2222 - Semiconductor Technical Data | PDF",15]