[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-671570-105":3,"detail-sidebar-cat-0-en-105":80,"doc-detail-671570-en":130},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":73,"head_meta":75,"extra_data":77,"updated_unix":79},105,"en","2n2222-npn-silicon-epitaxial-planar-transistor-for-switching-and-af-amplifier-applications","2N2222 - NPN Silicon Epitaxial Planar Transistor - for switching and AF amplifier applications","","NPN silicon epitaxial planar transistors 2N2222 and 2N2222A are specified for switching and AF amplifier applications. The document defines allowable stress limits at Ta = 25°C, listing maximum voltages, collector current up to 600 mA, total power dissipation of 625 mW, and junction and storage temperature ranges. It also provides typical characteristics at 25°C, including DC current gain hFE across multiple operating currents, cutoff and breakdown parameters, saturation voltages, gain bandwidth product, and collector output capacitance. Pin configurations can vary on request.",{"@graph":14,"@context":72},[15,34,55],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/document/technology/","Technology",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/document/2n2222-npn-silicon-epitaxial-planar-transistor-for-switching-and-af-amplifier-applications/671570/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/2n2222-npn-silicon-epitaxial-planar-transistor-for-switching-and-af-amplifier-applications/671570.png","ImageObject",300,407,{"name":42,"@type":43},"River Wang","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-11-03","2026-11-01",true,{"@type":52,"interactionType":53,"userInteractionCount":26},"InteractionCounter",{"@type":54},"ViewAction",{"@type":56,"mainEntity":57},"FAQPage",[58,64,68],{"name":59,"@type":60,"acceptedAnswer":61},"What are the absolute maximum ratings for 2N2222 and 2N2222A at Ta = 25°C?","Question",{"text":62,"@type":63},"They include maximum collector-base voltage of 60V/75V, collector-emitter voltage of 30V/40V, emitter-base voltage of 5V/6V, collector current of 600mA, total power dissipation of 625mW, and junction temperature of 150°C, with storage from -55°C to +150°C.","Answer",{"name":65,"@type":60,"acceptedAnswer":66},"How is DC current gain (hFE) specified for different operating points?",{"text":67,"@type":63},"hFE is given at VCE = 10V with several IC values: 0.1mA, 1mA, 10mA, and 150mA for each device; 2N2222A also includes a 500mA case with specified minimums.",{"name":69,"@type":60,"acceptedAnswer":70},"What switching and saturation parameters are listed in the characteristics table?",{"text":71,"@type":63},"Collector-emitter saturation voltage VCE(sat) and base-emitter saturation voltage VBE(sat) are provided for test conditions such as IC = 150mA with IB = 15mA and IC = 500mA with IB = 50mA.","https://schema.org",{"og:url":32,"og:type":74,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":76,"canonical":32},"index,follow",{"doc_id":78,"site_id":7},671570,1793577369,{"code":4,"msg":81,"data":82},"success",[83,87,91,95,100,104,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":84,"show_sort_weight":85,"slug":86},"Story & Novel",90,"story-novel",{"id":26,"doc_module":4,"doc_module_name":25,"category_name":88,"show_sort_weight":89,"slug":90},"Literature",80,"literature",{"id":33,"doc_module":4,"doc_module_name":25,"category_name":92,"show_sort_weight":93,"slug":94},"Exam",70,"exam",{"id":96,"doc_module":4,"doc_module_name":25,"category_name":97,"show_sort_weight":98,"slug":99},5,"Comic",60,"comic",{"id":101,"doc_module":4,"doc_module_name":25,"category_name":29,"show_sort_weight":102,"slug":103},6,50,"technology",{"id":105,"doc_module":4,"doc_module_name":25,"category_name":106,"show_sort_weight":107,"slug":108},7,"Healthcare",40,"healthcare",{"id":110,"doc_module":4,"doc_module_name":25,"category_name":111,"show_sort_weight":112,"slug":113},8,"Research & Report",30,"research-report",{"id":115,"doc_module":4,"doc_module_name":25,"category_name":116,"show_sort_weight":117,"slug":118},9,"Religion & Spirituality",20,"religion-spirituality",{"id":117,"doc_module":4,"doc_module_name":25,"category_name":120,"show_sort_weight":117,"slug":121},"World Cup","world-cup",{"id":123,"doc_module":4,"doc_module_name":25,"category_name":124,"show_sort_weight":123,"slug":125},10,"Lifestyle","lifestyle",{"id":127,"doc_module":4,"doc_module_name":25,"category_name":128,"show_sort_weight":96,"slug":129},19,"General","general",{"code":4,"msg":81,"data":131},{"doc_id":78,"user_id":132,"nickname":42,"user_avatar":133,"doc_module":4,"category_id":101,"category_name":29,"doc_title":10,"doc_description":12,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":26,"is_deleted":4,"is_public":22,"is_downloadable":22,"audit_status":22,"page_count":30,"language":139,"language_code":8,"site_id":7,"html_lang":8,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":12,"update_tm":79,"read_time":110},1099514067438,"https://ap-avatar.wpscdn.com/avatar/100002539ee87300030?x-image-process=image/resize,m_fixed,w_180,h_180&k=1780474512215547542","2N2222 / 2N2222A  \nNPN Silicon Epitaxial Planar Transistor  \nfor switching and AF amplifier applications.  \nThe transistor is subdivided into one group according to its DC current gain.  \nOn special request, these transistors can be manufactured in different pin configurations.  \n1. Emitter 2. Base 3. Collector TO-92 Plastic Package  \nAbsolute Maximum Ratings (Ta = 25 OC)  \n| Parameter | Symbol | Value | Unit |\n| --- | --- | --- | --- |\n| Collector Base Voltage 2N2222\u003Cbr>2N2222A | VCBO | 60\u003Cbr>75 | V |\n| Collector Emitter Voltage 2N2222\u003Cbr>2N2222A | VCEO | 30\u003Cbr>40 | V |\n| Emitter Base Voltage 2N2222\u003Cbr>2N2222A | VEBO | 5 6 | V |\n| Collector Current | IC | 600 | mA |\n| Power Dissipation | Ptot | 625 | mW |\n| Junction Temperature | Tj | 150 | OC |\n| Storage Temperature Range | Tstg | -55 to + 150 | OC |\n\n2N2222 / 2N2222A  \nCharacteristics at T = 25 OC  \n\n| a\u003Cbr>Parameter |  | Symbol | Min. | Max. | Unit |\n| --- | --- | --- | --- | --- | --- |\n| DC Current Gain |  |  |  |  |  |\n| at VCE = 10 V, IC = 0.1 mA |  | hFE | 35 | - | - |\n| at VCE = 10 V, IC = 1 mA |  | hFE | 50 | - | - |\n| at VCE = 10 V, IC = 10 mA |  | hFE | 75 | - | - |\n| at VCE = 10 V, IC = 150 mA |  | hFE | 100 | 300 | - |\n| at VCE = 10 V, IC = 500 mA 2N2222 |  | hFE | 30 | - | - |\n| 2N2222A |  | hFE | 40 | - | - |\n| Collector Base Cutoff Current\u003Cbr>at VCB = 50 V\u003Cbr>at VCB = 60 V | 2N2222\u003Cbr>2N2222A | ICBO | -\u003Cbr>- | 10\u003Cbr>10 | nA |\n| Collector Base Breakdown Voltage\u003Cbr>at IC = 10 µA 2N2222\u003Cbr>2N2222A |  | V(BR)CBO | 60\u003Cbr>75 | -\u003Cbr>- | V |\n| Collector Emitter Breakdown Voltage\u003Cbr>at IC = 10 mA 2N2222\u003Cbr>2N2222A |  | V(BR)CEO | 30\u003Cbr>40 | -\u003Cbr>- | V |\n| Emitter Base Breakdown Voltage\u003Cbr>at IE = 10 µA 2N2222\u003Cbr>2N2222A |  | V(BR)EBO | 5 6 | -\u003Cbr>- | V |\n| Collector Emitter Saturation Voltage\u003Cbr>at IC = 150 mA, IB = 15 mA\u003Cbr>at IC = 500 mA, IB = 50 mA | 2N2222\u003Cbr>2N2222A\u003Cbr>2N2222\u003Cbr>2N2222A | VCE(sat) | -\u003Cbr>-\u003Cbr>-\u003Cbr>- | 0.4\u003Cbr>0.3\u003Cbr>1.6\u003Cbr>1 | V |\n| Base Emitter Saturation Voltage\u003Cbr>at IC = 150 mA, IB = 15 mA\u003Cbr>at IC = 500 mA, IB = 50 mA | 2N2222\u003Cbr>2N2222A\u003Cbr>2N2222\u003Cbr>2N2222A | VBE(sat) | -\u003Cbr>0.6\u003Cbr>-\u003Cbr>- | 1.3\u003Cbr>1.2\u003Cbr>2.6\u003Cbr>2 | V |\n| Gain Bandwidth Product\u003Cbr>at IC = 20 mA, VCE = 20 V, f = 100 MHz |  | fT | 250 | - | MHz |\n| Collector Output Capacitance\u003Cbr>at VCB = 10 V, f = 1 MHz |  | Cob | - | 8 | pF |\n\n2N2222 / 2N2222A  \nNote: Specification is subject to change without further notice. For more details and updates, please visit our website.","cbCaif13BKOEsUxy","https://ap.wps.com/l/cbCaif13BKOEsUxy","pdf",605354,"English","# Absolute Maximum Ratings\n## Characteristics at T = 25°C\n## Notes","[{\"question\":\"What are the absolute maximum ratings for 2N2222 and 2N2222A at Ta = 25°C?\",\"answer\":\"They include maximum collector-base voltage of 60V/75V, collector-emitter voltage of 30V/40V, emitter-base voltage of 5V/6V, collector current of 600mA, total power dissipation of 625mW, and junction temperature of 150°C, with storage from -55°C to +150°C.\"},{\"question\":\"How is DC current gain (hFE) specified for different operating points?\",\"answer\":\"hFE is given at VCE = 10V with several IC values: 0.1mA, 1mA, 10mA, and 150mA for each device; 2N2222A also includes a 500mA case with specified minimums.\"},{\"question\":\"What switching and saturation parameters are listed in the characteristics table?\",\"answer\":\"Collector-emitter saturation voltage VCE(sat) and base-emitter saturation voltage VBE(sat) are provided for test conditions such as IC = 150mA with IB = 15mA and IC = 500mA with IB = 50mA.\"}]","2N2222 - NPN Silicon Epitaxial Planar Transistor - for switching and AF amplifier applications | PDF"]