[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"doc-seo-671569-105":3,"detail-sidebar-cat-0-en-105":80,"doc-detail-671569-en":130},{"code":4,"msg":5,"data":6},0,"ok",{"site_id":7,"language":8,"slug":9,"title":10,"keywords":11,"description":12,"schema_data":13,"social_meta":73,"head_meta":75,"extra_data":77,"updated_unix":79},105,"en","2n2222-low-power-bipolar-transistors-datasheet-summary","2N2222 - Low Power Bipolar Transistors - Datasheet Summary","","2N2222 low power bipolar NPN silicon planar switching transistor datasheet provides device features, package details (TO-18 metal can) and dimensional ranges in millimetres. It lists absolute maximum ratings for voltage, current, power dissipation and junction temperature, followed by electrical characteristics such as breakdown voltages, leakage current and VCE(sat)/VBE(sat). Dynamic and switching parameters include transition frequency, capacitances, delay, rise, storage and fall times. Notes include pulse limits and part-number mapping, plus international sales office contact information and a legal disclaimer.",{"@graph":14,"@context":72},[15,34,55],{"@type":16,"itemListElement":17},"BreadcrumbList",[18,23,27,31],{"item":19,"name":20,"@type":21,"position":22},"https://docshare.wps.com","Home","ListItem",1,{"item":24,"name":25,"@type":21,"position":26},"https://docshare.wps.com/document/","Document",2,{"item":28,"name":29,"@type":21,"position":30},"https://docshare.wps.com/document/technology/","Technology",3,{"item":32,"name":10,"@type":21,"position":33},"https://docshare.wps.com/document/2n2222-low-power-bipolar-transistors-datasheet-summary/671569/",4,{"url":32,"name":10,"@type":35,"image":36,"author":41,"headline":10,"publisher":44,"fileFormat":47,"inLanguage":8,"description":12,"dateModified":48,"datePublished":49,"encodingFormat":47,"isAccessibleForFree":50,"interactionStatistic":51},"DigitalDocument",{"url":37,"@type":38,"width":39,"height":40},"https://docshare.wps.com/thumbnails/2n2222-low-power-bipolar-transistors-datasheet-summary/671569.png","ImageObject",300,407,{"name":42,"@type":43},"Riley","Person",{"url":19,"name":45,"@type":46},"DocShare","Organization","application/pdf","2026-11-02","2026-11-01",true,{"@type":52,"interactionType":53,"userInteractionCount":26},"InteractionCounter",{"@type":54},"ViewAction",{"@type":56,"mainEntity":57},"FAQPage",[58,64,68],{"name":59,"@type":60,"acceptedAnswer":61},"What package and pin configuration does the 2N2222 use?","Question",{"text":62,"@type":63},"The 2N2222 is provided in a TO-18 metal can package. Pin configuration lists 1 as Emitter, 2 as Base, and 3 as Collector.","Answer",{"name":65,"@type":60,"acceptedAnswer":66},"What are the key absolute maximum ratings for the 2N2222?",{"text":67,"@type":63},"The datasheet specifies maximum collector-emitter voltage (VCEO) of 30 V, collector-base voltage (VCBO) of 60 V, emitter-base voltage (VEBO) of 5 V, continuous collector current (IC) of 800 mA, and operating/storage junction temperature range from -65 to +200 °C.",{"name":69,"@type":60,"acceptedAnswer":70},"Which electrical and switching characteristics are included in the datasheet?",{"text":71,"@type":63},"Electrical characteristics include breakdown voltages, leakage current, VCE(sat) and VBE(sat), and DC current gain (hFE) across test conditions. Switching characteristics cover transition frequency, output/input capacitance, and timing parameters such as delay time (td), rise time (tr), storage time (ts) and fall time (tf).","https://schema.org",{"og:url":32,"og:type":74,"og:title":10,"og:site_name":45,"og:description":12},"article",{"robots":76,"canonical":32},"index,follow",{"doc_id":78,"site_id":7},671569,1793577368,{"code":4,"msg":81,"data":82},"success",[83,87,91,95,100,104,109,114,119,122,126],{"id":22,"doc_module":4,"doc_module_name":25,"category_name":84,"show_sort_weight":85,"slug":86},"Story & Novel",90,"story-novel",{"id":26,"doc_module":4,"doc_module_name":25,"category_name":88,"show_sort_weight":89,"slug":90},"Literature",80,"literature",{"id":33,"doc_module":4,"doc_module_name":25,"category_name":92,"show_sort_weight":93,"slug":94},"Exam",70,"exam",{"id":96,"doc_module":4,"doc_module_name":25,"category_name":97,"show_sort_weight":98,"slug":99},5,"Comic",60,"comic",{"id":101,"doc_module":4,"doc_module_name":25,"category_name":29,"show_sort_weight":102,"slug":103},6,50,"technology",{"id":105,"doc_module":4,"doc_module_name":25,"category_name":106,"show_sort_weight":107,"slug":108},7,"Healthcare",40,"healthcare",{"id":110,"doc_module":4,"doc_module_name":25,"category_name":111,"show_sort_weight":112,"slug":113},8,"Research & Report",30,"research-report",{"id":115,"doc_module":4,"doc_module_name":25,"category_name":116,"show_sort_weight":117,"slug":118},9,"Religion & Spirituality",20,"religion-spirituality",{"id":117,"doc_module":4,"doc_module_name":25,"category_name":120,"show_sort_weight":117,"slug":121},"World Cup","world-cup",{"id":123,"doc_module":4,"doc_module_name":25,"category_name":124,"show_sort_weight":123,"slug":125},10,"Lifestyle","lifestyle",{"id":127,"doc_module":4,"doc_module_name":25,"category_name":128,"show_sort_weight":96,"slug":129},19,"General","general",{"code":4,"msg":81,"data":131},{"doc_id":78,"user_id":132,"nickname":42,"user_avatar":133,"doc_module":4,"category_id":101,"category_name":29,"doc_title":10,"doc_description":12,"doc_content":134,"file_id":135,"file_url":136,"file_type":137,"file_size":138,"view_count":26,"is_deleted":4,"is_public":22,"is_downloadable":22,"audit_status":22,"page_count":33,"language":139,"language_code":8,"site_id":7,"html_lang":8,"table_of_contents":140,"faqs":141,"seo_title":142,"seo_description":12,"update_tm":79,"read_time":123},1374391975076,"https://ap-avatar.wpscdn.com/avatar/14000253ca4ec9f6853?x-image-process=image/resize,m_fixed,w_180,h_180&k=1783305029341752051","2N2222  \nLow Power Bipolar Transistors  \nFeatures:  \n• NPN Silicon Planar Switching Transistors.  \n• Switching and Linear application DC and VHF Amplifier applications.  \nTO-18 Metal Can Package  \n| Dimensions | Minimum | Maximum |\n| --- | --- | --- |\n| A | 5.24 | 5.84 |\n| B | 4.52 | 4.97 |\n| C | 4.31 | 5.33 |\n| D | 0.40 | 0.53 |\n| E | - | 0.76 |\n| F | - | 1.27 |\n| G | - | 2.97 |\n| H | 0.91 | 1.17 |\n| J | 0.71 | 1.21 |\n| K | 12.70 | - |\n| L | 45° |  |\n\nDimensions : Millimetres  \nPin Configuration:  \n1. Emitter  \n2. Base  \n3. Collector  \n2N2222  \nLow Power Bipolar Transistors  \nAbsolute Maximum Ratings (Ta = 25°C unless specified otherwise)  \n\n| Description | Symbol | 2N2222 | Unit |\n| --- | --- | --- | --- |\n| Collector Emitter Voltage | V CEO | 30 | V |\n| Collector Base Voltage | VCBO | 60 |  |\n| Emitter Base Voltage | VEBO | 5 |  |\n| Collector Current Continuous | IC | 800 | mA |\n| Power Dissipation at Ta = 25°C\u003Cbr>Derate above 25°C | PD | 500\u003Cbr>2.28 | mW\u003Cbr>mW/°C |\n| Power Dissipation at TC = 25°C\u003Cbr>Derate above 25°C |  | 1.2\u003Cbr>6.85 | W\u003Cbr>mW/°C |\n| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +200 | °C |\n\nElectrical Characteristics (Ta = 25°C unless specified otherwise)  \n\n| Description | Symbol | Test Condition | Value |  | Unit |\n| --- | --- | --- | --- | --- | --- |\n|  |  |  | Minimum | Maximum |  |\n| Collector Emitter Breakdown Voltage | BV CEO | IC = 10mA, IB = 0 | 30 | - | V |\n| Collector Base Breakdown Voltage | BVCBO | IC = 10µA, IE = 0 | 60 | - |  |\n| Emitter Base Breakdown Voltage | VEBOf | IE = 10µA, IC = 0 | 5 | - |  |\n| Collector Leakage Current | ICBO | V CB = 50V, IE = 0\u003Cbr>V CB = 50V, IE = 0 Ta = 150°C | - | 10\u003Cbr>10 | nA\u003Cbr>µA |\n| Collector Emitter Saturation Voltage | *VCE (Sat) | IC = 150mA, IB = 15mAIC = 500mA, IB = 50mA | - | 0.4\u003Cbr>1.6 | V |\n| Base Emitter Saturation Voltage | *V BE (Sat) | IC = 150mA, IB = 15mAIC = 500mA, IB = 50mA | 0.6 | 1.3\u003Cbr>2.6 |  |\n\n2N2222  \nLow Power Bipolar Transistors  \nElectrical Characteristics (Ta = 25°C unless specified otherwise)  \n\n| Parameter | Symbol | Test Condition | 2N2222 |  | Unit |\n| --- | --- | --- | --- | --- | --- |\n|  |  |  | Minimum | Maximum |  |\n| DC Current Gain | h FE | IC = 0.1mA, VCE = 10V* IC = 1mA, VCE = 10V\u003Cbr>IC = 10mA, VCE = 10V*\u003Cbr>IC = 150mA, VCE = 1V*\u003Cbr>IC = 150mA, VCE = 1V* IC = 500mA, VCE = 10V* | 35\u003Cbr>50\u003Cbr>75\u003Cbr>50\u003Cbr>100\u003Cbr>30 | 300 | - |\n| Dynamic Characteristics |  |  |  |  |  |\n| Transition Frequency | ft | IC = 20mA, VCE = 20Vf = 100MHz | 250 | - | MHz |\n| Output Capacitance | Cob | V CB = 10V, IE = 0\u003Cbr>f = 100kHz | - | 8 | pF |\n| Input Capacitance | C ib | VEB = 0.5V, IC = 0\u003Cbr>f = 100kHz | - | 30 |  |\n| Switching Characteristics |  |  |  |  |  |\n| Delay Time | td | IC = 150mA,IB1 = 15mA | - | 10 | ns |\n| Rise Time | tr | V CC = 30V, V BE (off) = 0.5V | - | 25 |  |\n| Storage Time | ts | IC = 150mA, IB1 = 15mA | - | 225 |  |\n| Fall Time | tf | IB2 = 15mA, V CC = 30V | - | 60 |  |\n\n*Pulse Condition: Pulse Width ≤300µs, Duty Cycle ≤2% .  \nPart Number Table  \n\n| Package | Part Number |\n| --- | --- |\n| TO-18 | 2N2222 |\n\n2N2222  \nLow Power Bipolar Transistors  \nNotes:  \nInternational Sales Offices:  \nAUSTRALIA – Farnell InOne  \nTel No: ++ 61 2 9645 8888  \nFax No: ++ 61 2 9644 7898  \nAUSTRIA – Farnell InOne  \nTel No: ++ 43 662 2180 680  \nFax No: ++ 43 662 2180 670  \nBELGIUM – Farnell InOne  \nTel No: ++ 32 3 475 2810  \nFax No: ++ 32 3 227 3648  \nBRAZIL – Farnell-Newark InOne  \nTel No: ++ 55 11 4066 9400  \nFax No: ++ 55 11 4066 9410  \nCHINA – Farnell-Newark InOne  \nTel No: ++86 10 6238 5152  \nFax No: ++86 10 6238 5022  \nDENMARK – Farnell InOne  \nTel No: ++ 45 44 53 66 44  \nFax No: ++ 45 44 53 66 06  \nESTONIA – Farnell InOne  \nTel No: ++ 358 9 560 7780  \nFax No: ++ 358 9 345 5411  \nFINLAND – Farnell InOne  \nTel No: ++ 358 9 560 7780  \nFax No: ++ 358 9 345 5411  \nFRANCE – Farnell InOne  \nTel No: ++ 33 474 68 99 99  \nFax No: ++ 33 474 68 99 90  \nGERMANY – Farnell InOne  \nTel No: ++ 49 89 61 39 39 39  \nFax No: ++ 4","cbCaiueoiRVzjCyA","https://ap.wps.com/l/cbCaiueoiRVzjCyA","pdf",143085,"English","# Features\n# Package and Dimensions\n# Absolute Maximum Ratings\n# Electrical Characteristics\n## DC Current Gain and Other Parameters\n## Dynamic and Switching Characteristics\n# Switching Notes and Part Number Table\n# International Sales Offices and Disclaimer","[{\"question\":\"What package and pin configuration does the 2N2222 use?\",\"answer\":\"The 2N2222 is provided in a TO-18 metal can package. Pin configuration lists 1 as Emitter, 2 as Base, and 3 as Collector.\"},{\"question\":\"What are the key absolute maximum ratings for the 2N2222?\",\"answer\":\"The datasheet specifies maximum collector-emitter voltage (VCEO) of 30 V, collector-base voltage (VCBO) of 60 V, emitter-base voltage (VEBO) of 5 V, continuous collector current (IC) of 800 mA, and operating/storage junction temperature range from -65 to +200 °C.\"},{\"question\":\"Which electrical and switching characteristics are included in the datasheet?\",\"answer\":\"Electrical characteristics include breakdown voltages, leakage current, VCE(sat) and VBE(sat), and DC current gain (hFE) across test conditions. Switching characteristics cover transition frequency, output/input capacitance, and timing parameters such as delay time (td), rise time (tr), storage time (ts) and fall time (tf).\"}]","2N2222 - Low Power Bipolar Transistors - Datasheet Summary | PDF"]